IRF4905
HEXFET
®
Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -74
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -52 A
I
DM
Pulsed Drain Current -260
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 930 mJ
I
AR
Avalanche Current -38 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case 0.75
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 °C/W
R
θJA
Junction-to-Ambient 62
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.02Ω
I
D
= -74A
T
O
-22
0
AB
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
05/24/07
S
D
G
PD - 91280D
