MJX-MJ6050KA芯片数据手册
需积分: 5 100 浏览量
2022-10-24
17:39:56
上传
评论
收藏 675KB PDF 举报
MJ6050KA
P-1
The MJ6050KA uses advanced trench technology and design to provide excellent R
DS(ON)
with low gate charge.
It can be used in a wide variety of applications.
◆ V
DS
=60V,I
D
=50A
R
DS(ON)
<20mΩ @ V
GS
=10V
◆ High density cell design for ultra low Rdson
◆ Fully characterized avalanche voltage and current
◆ Good stability and uniformity with high E
AS
◆ Excellent package for good heat dissipation
◆ ◆ Special process technology for high ESD capability
◆ Power switching application
◆ Hard switched and high frequency circuits
◆ Uninterruptible power supply
Schematic diagram Marking and pin assignment
TO-252-2L top view
Drain-Source Voltage
V
DS
60
V
V
GS
±20
V
Gate-Source Voltage
I
D
50
A
Drain Current-Continuous
I
D(100℃)
35.4
A
Drain Current-Continuous(T
C
=100℃)
I
DM
200
A
Pulsed Drain Current
P
D
85
W
Maximum Power Dissipation
0.57
W/℃
Derating factor
E
AS
300
mJ
Single pulse avalanche energy
(Note 5)
T
J
,
T
STG
-55 To 175
℃
Operating Junction and Storage Temperature Range
Thermal Resistance,Junction-to-Case
R
θJC
1.8
℃/W
(Note 2)
http://www.mjxdz.com
评论0
最新资源