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AIN1

AIN8

MUX

T/H

ADC78H90

SCLK

AGND

DGND

DIN

DOUT

CONTROL

LOGIC

12-BIT

SUCCESSIVE

APPROXIMATION

ADC

AGND

8 9

CS SCLK

DOUT

AGND DIN

AIN1 DV

AIN2 DGND

AIN3 AIN8

AIN4 AIN7

AIN5 AIN6

ADC78H90

www.ti.com

SNAS227D –NOVEMBER 2003–REVISED MARCH 2013

ADC78H90 8-Channel, 500 kSPS, 12-Bit A/D Converter

Check for Samples: ADC78H90

The ADC78H90 is packaged in a 16-lead TSSOP

FEATURES

package. Operation over the industrial temperature

• Eight input channels

range of −40°C to +85°C is ensured.

• Variable power management

Connection Diagram

• Independent analog and digital supplies

• SPI™/QSPI™/MICROWIRE™/DSP compatible

• Packaged in 16-lead TSSOP

APPLICATIONS

• Automotive Navigation

• Portable Systems

• Medical Instruments

• Mobile Communications

• Instrumentation and Control Systems

KEY SPECIFICATIONS

Figure 1. 16-Lead TSSOP

• Conversion Rate: 500kSPS

See PW Package

• DNL: ± 1LSB (max)

• INL: ± 1LSB (max)

Block Diagram

• Power Consumption

– 3V Supply: 1.5 mW (typ)

– 5V Supply: 8.3 mW (typ)

DESCRIPTION

The ADC78H90 is a low-power, eight-channel CMOS

12-bit analog-to-digital converter with a conversion

throughput of 500 kSPS. The converter is based on a

successive-approximation register architecture with

an internal track-and-hold circuit. It can be configured

to accept up to eight input signals at inputs AIN1

through AIN8.

The output serial data is straight binary, and is

compatible with several standards, such as SPI™,

QSPI™, MICROWIRE™, and many common DSP

PIN DESCRIPTIONS AND EQUIVALENT CIRCUITS

serial interfaces.

Pin Equivalent Description

Symbol

The ADC78H90 may be operated with independent

No. Circuit

analog and digital supplies. The analog supply (AV

)

ANALOG I/O

can range from +2.7V to +5.25V, and the digital

4 - AIN1 to Analog inputs. These signals

supply (DV

) can range from +2.7V to AV

. Normal

11 AIN8 can range from 0V to AV

power consumption using a +3V or +5V supply is 1.5

DIGITAL I/O

mW and 8.3 mW, respectively. The power-down

feature reduces the power consumption to just 0.3

µW using a +3V supply, or 0.5 µW using a +5V

supply.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

ADC78H90

SNAS227D –NOVEMBER 2003–REVISED MARCH 2013

www.ti.com

PIN DESCRIPTIONS AND EQUIVALENT PIN DESCRIPTIONS AND EQUIVALENT

CIRCUITS (continued) CIRCUITS (continued)

Pin Equivalent Description Pin Equivalent Description

Symbol Symbol

No. Circuit No. Circuit

Digital clock input. The range of Positive analog supply pin. This

frequencies for this input is 50 pin should be connected to a

kHz to 8 MHz, with ensured quiet +2.7V to +5.25V source

16 SCLK performance at 8 MHz. This and bypassed to GND with a 1

2 AV

clock directly controls the µF tantalum capacitor and a 0.1

conversion and readout µF ceramic monolithic capacitor

processes. located within 1 cm of the

power pin.

Digital data output. The output

samples are clocked out of this Positive digital supply pin. This

15 DOUT

pin on falling edges of the pin should be connected to a

SCLK pin. +2.7V to AV

supply, and

13 DV

bypassed to GND with a 0.1 µF

Digital data input. The

ceramic monolithic capacitor

ADC78H90's Control Register

14 DIN

located within 1 cm of the

is loaded through this pin on

power pin.

rising edges of the SCLK pin.

The ground return for the

Chip select. On the falling edge

3 AGND

analog supply and signals.

of CS, a conversion process

1 CS

begins. Conversions continue The ground return for the digital

12 DGND

as long as CS is held low. supply and signals.

POWER SUPPLY

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)(2)

Analog Supply Voltage AV

−0.3V to 6.5V

Digital Supply Voltage DV

−0.3V to AV

+ 0.3V, max 6.5V

Voltage on Any Pin to GND −0.3V to AV

+0.3V

Input Current at Any Pin

(3)

±10 mA

Package Input Current

(3)

±20 mA

Power Dissipation at T

= 25°C See

(4)

ESD Susceptibility

(5)

Human Body Model 2500V

Machine Model 250V

Soldering Temperature, Infrared,

10 seconds

(6)

260°C

Junction Temperature +150°C

Storage Temperature −65°C to +150°C

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the

Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may

degrade when the device is not operated under the listed test conditions.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3) When the input voltage at any pin exceeds the power supplies (that is, V

< AGND or V

or V

), the current at that pin should be

limited to 10 mA. The 20 mA maximum package input current rating limits the number of pins that can safely exceed the power supplies

with an input current of 10 mA to two.

(4) The absolute maximum junction temperature (T

max) for this device is 150°C. The maximum allowable power dissipation is dictated by

max, the junction-to-ambient thermal resistance (θ

), and the ambient temperature (T

), and can be calculated using the formula

MAX = (T

max − T

)/θ

. In the 16-pinTSSOP, θ

is 96°C/W, so P

MAX = 1,200mW at 25°C and 625 mW at the maximum

operating ambient temperature of85°C. Note that the power consumption of this device under normal operation is a maximum of 12 mW.

The values for maximum power dissipation listed above will be reached only when the ADC78H90 is operated in a severe fault condition

(e.g. when input or output pins are driven beyond the power supply voltages, or the power supply polarity is reversed). Obviously, such

conditions should always be avoided.

(5) Human body model is 100 pF capacitor discharged through a 1.5 kΩ resistor. Machine model is 220 pF discharged through ZERO ohms

(6) See AN450, “Surface Mounting Methods and Their Effect on Product Reliability”, or the section entitled “Surface Mount” found in any

post 1986 Texas Instruments Linear Data Book, for other methods of soldering surface mount devices.

Product Folder Links: ADC78H90

ADC78H90

SNAS227D –NOVEMBER 2003–REVISED MARCH 2013

www.ti.com

ADC78H90 Converter Electrical Characteristics

(1)

The following specifications apply for AV

= DV

= +2.7V to 5.25V, AGND = DGND = 0V, f

SCLK

= 8 MHz, f

SAMPLE

= 500

KSPS, unless otherwise noted. Boldface limits apply for T

= T

MIN

to T

MAX

: all other limits T

= 25°C.

Limits

Symbol Parameter Conditions Typical Units

(2)

STATIC CONVERTER CHARACTERISTICS

Resolution with No Missing Codes 12 Bits

INL Integral Non-Linearity AV

= +5.0V, DV

= +3.0V ±1 LSB (max)

DNL Differential Non-Linearity AV

= +5.0V, DV

= +3.0V ±1 LSB (max)

OFF

Offset Error AV

= +5.0V, DV

= +3.0V ±2 LSB (max)

OEM Offset Error Match AV

= +5.0V, DV

= +3.0V ±2 LSB (max)

GE Gain Error AV

= +5.0V, DV

= +3.0V ±3 LSB (max)

GEM Gain Error Match AV

= +5.0V, DV

= +3.0V ±3 LSB (max)

DYNAMIC CONVERTER CHARACTERISTICS

= +5.0V, DV

= +3.0V,

SINAD Signal-to-Noise Plus Distortion Ratio 73 70 dB (min)

= 40.2 kHz, −0.02 dBFS

= +5.0V, DV

= +3.0V,

SNR Signal-to-Noise Ratio 73 70.8 dB (min)

= 40.2 kHz, −0.02 dBFS

= +5.0V, DV

= +3.0V,

THD Total Harmonic Distortion −86 −74 dB (max)

= 40.2 kHz, −0.02 dBFS

= +5.0V, DV

= +3.0V,

SFDR Spurious-Free Dynamic Range 88 75.6 dB (min)

= 40.2 kHz, −0.02 dBFS

ENOB Effective Number of Bits AV

= +5.0V, DV

= +3.0V, 11.8 11.3 Bits (min)

= +5.0V, DV

= +3.0V,

Channel-to-Channel Crosstalk -82 dB

= 40.2 kHz

Intermodulation Distortion, Second AV

= +5.0V, DV

= +3.0V,

-93 dB

Order Terms f

= 40.161 kHz, f

= 41.015 kHz

IMD

Intermodulation Distortion, Third Order AV

= +5.0V, DV

= +3.0V,

-90 dB

Terms f

= 40.161 kHz, f

= 41.015 kHz

= +5V 11 MHz

FPBW -3 dB Full Power Bandwidth

= +3V 8 MHz

ANALOG INPUT CHARACTERISTICS

Input Range 0 to AV

DCL

DC Leakage Current ±1 µA (max)

Track Mode 33 pF

INA

Input Capacitance

Hold Mode 3 pF

DIGITAL INPUT CHARACTERISTICS

= +4.75Vto +5.25V 2.4 V (min)

Input High Voltage

= +2.7V to +3.6V 2.1 V (min)

Input Low Voltage DV

= +2.7V to +5.25V 0.8 V (max)

Input Current V

= 0V or DV

±0.01 ±1 µA (max)

IND

Digital Input Capacitance 2 4 pF (max)

DIGITAL OUTPUT CHARACTERISTICS

SOURCE

= 200 µA, DV

= +2.7V to

Output High Voltage DV

−0.5 V (min)

+5.25V

Output Low Voltage I

SINK

= 200 µA 0.4 V (max)

OZH

, I

OZL

TRI-STATE® Leakage Current ±1 µA (max)

OUT

TRI-STATE® Output Capacitance 2 4 pF (max)

Output Coding Straight (Natural) Binary

(1) Data sheet min/max specification limits are ensured by design, test, or statistical analysis.

(2) Tested limits are specified to TI's AOQL (Average Outgoing Quality Level).

Product Folder Links: ADC78H90

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