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8 Megabit (512K x 16-Bit) Multi-Purpose Flash

SST39VF800Q / SST39VF800

Advance Information

343-04 2/99 These specifications are subject to change without notice.

FEATURES:

• Organized as 512 K X 16

• Single 2.7-3.6V Read and Write Operations

•V

DDQ

Power Supply to Support 5V I/O

for SST39VF800Q

-V

DDQ

not available on SST39VF800

• Superior Reliability

- Endurance: 100,000 Cycles (typical)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Current: 15 mA (typical)

- Standby Current: 3 µA (typical)

- Auto Low Power Mode: 3 µA (typical)

• Small Sector Erase Capability (256 sectors)

- Uniform 2 KWord sectors

• Block Erase Capability (16 blocks)

- Uniform 32 KWord blocks

• Fast Read Access Time:

- 70 and 90 ns

• Latched Address and Data

• Fast Sector Erase and Word Program:

- Sector Erase Time: 18 ms (typical)

- Block Erase Time: 18 ms (typical)

- Chip Erase Time: 70 ms (typical)

- Word Program time: 14 µs (typical)

- Chip Rewrite Time: 8 seconds (typical)

• Automatic Write Timing

- Internal V

Generation

• End of Write Detection

- Toggle Bit

- Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

- Flash EEPROM Pinouts and command sets

• Packages Available

- 48-Pin TSOP (12mm x 20mm)

- 6 x 8 Ball TFBGA

PRODUCT DESCRIPTION

The SST39VF800Q/VF800 devices are 512K x 16

CMOS Multi-Purpose Flash (MPF) manufactured with

SST’s proprietary, high performance CMOS SuperFlash

technology. The split-gate cell design and thick oxide

tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST39VF800Q/VF800 write (Program or Erase)

with a 2.7-3.6V power supply. The SST39VF800Q/

VF800 conform to JEDEC standard pinouts for x16

memories.

Featuring high performance word program, the

SST39VF800Q/VF800 devices provide a typical word

program time of 14 µsec. The entire memory can typi-

cally be erased and programmed word-by-word in 8

seconds, when using interface features such as Toggle

Bit or Data# Polling to indicate the completion of Program

operation. To protect against inadvertent write, the

SST39VF800Q/VF800 have on-chip hardware and soft-

ware data protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, the

SST39VF800Q/VF800 are offered with a guaranteed

endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

The SST39VF800Q/VF800 devices are suited for appli-

cations that require convenient and economical updating

of program, configuration, or data memory. For all sys-

tem applications, the SST39VF800Q/VF800 signifi-

cantly improve performance and reliability, while lower-

ing power consumption. The SST39VF800Q/VF800 in-

herently use less energy during Erase and Program than

alternative flash technologies. The total energy con-

sumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed

during any Erase or Program operation is less than

alternative flash technologies. The SST39VF800Q/

VF800 also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and

Program times, independent of the number of Erase/

Program cycles that have occurred. Therefore the sys-

tem software or hardware does not have to be modified

or de-rated as is necessary with alternative flash tech-

nologies, whose erase and program times increase with

accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the

SST39VF800Q/VF800 are offered in 48-pin TSOP and

48-pin TFBGA packages. See Figures 1 and 2 for

pinouts.

Device Operation

Commands are used to initiate the memory operation

functions of the device. Commands are written to the

device using standard microprocessor write sequences.

A command is written by asserting WE# low while

keeping CE# low. The address bus is latched on the

falling edge of WE# or CE#, whichever occurs last. The

data bus is latched on the rising edge of WE# or CE#,

whichever occurs first.

8 Megabit Multi-Purpose Flash

SST39VF800Q / SST39VF800

Advance Information

The SST39VF800Q/VF800 also have the Auto Low

Power mode which puts the device in a near standby mode

after data has been accessed with a valid read operation.

This reduces the I

active read current from typically 15

mA to typically 3 µA. The Auto Low Power mode reduces

the typical I

active read current to the range of 1 mA/MHz

of read cycle time. The device exits the Auto Low Power

mode with any address transition or control signal transi-

tion used to initiate another read cycle, with no access time

penalty.

Read

The Read operation of the SST39VF800Q/VF800 is con-

trolled by CE# and OE#, both have to be low for the system

to obtain data from the outputs. CE# is used for device

selection. When CE# is high, the chip is deselected and

only standby power is consumed. OE# is the output control

and is used to gate data from the output pins. The data bus

is in high impedance state when either CE# or OE# is high.

Refer to the Read cycle timing diagram for further details

(Figure 3).

Word Program Operation

The SST39VF800Q/VF800 are programmed on a word-

by-word basis. The Program operation consists of three

steps. The first step is the three-byte load sequence for

Software Data Protection. The second step is to load word

address and word data. During the Word Program opera-

tion, the addresses are latched on the falling edge of either

CE# or WE#, whichever occurs last. The data is latched on

the rising edge of either CE# or WE#, whichever occurs

first. The third step is the internal Program operation which

is initiated after the rising edge of the fourth WE# or CE#,

whichever occurs first. The Program operation, once initi-

ated, will be completed within 20 µs. See Figures 4 and 5

for WE# and CE# controlled Program operation timing

diagrams and Figure 16 for flowcharts. During the Pro-

gram operation, the only valid reads are Data# Polling and

Toggle Bit. During the internal Program operation, the host

is free to perform additional tasks. Any commands issued

during the internal Program operation are ignored.

Sector/Block Erase Operation

The Sector/Block Erase operation allows the system to

erase the device on a sector-by-sector (or block-by-block)

basis. The SST39VF800Q/VF800 offer both small Sector

Erase and Block Erase mode. The sector architecture is

based on uniform sector size of 2 KWord. The Block Erase

mode is based on uniform block size of 32 KWord. The

Sector Erase operation is initiated by executing a six-byte-

command sequence with Sector Erase command (30H)

and sector address (SA) in the last bus cycle. The address

lines A11-A18 are used to determine the sector address.

The Block Erase operation is initiated by executing a six-

byte command sequence with Block Erase command

(50H) and block address (BA) in the last bus cycle. The

address lines A15-A18 are used to determine the block

address. The sector or block address is latched on the

falling edge of the sixth WE# pulse, while the command

(30H or 50H) is latched on the rising edge of the sixth WE#

pulse. The internal Erase operation begins after the sixth

WE# pulse. The end of Erase operation can be determined

using either Data# Polling or Toggle Bit methods. See

Figures 9 and 10 for timing waveforms. Any commands

issued during the Sector or Block Erase operation are

ignored.

Chip Erase Operation

The SST39VF800Q/VF800 provide a Chip Erase opera-

tion, which allows the user to erase the entire memory array

to the “1” state. This is useful when the entire device must

be quickly erased.

The Chip Erase operation is initiated by executing a six-

byte command sequence with Chip Erase command

(10H) at address 5555H in the last byte sequence. The

Erase operation begins with the rising edge of the sixth

WE# or CE#, whichever occurs first. During the Erase

operation, the only valid read is Toggle Bit or Data# Polling.

See Table 4 for the command sequence, Figure 8 for timing

diagram, and Figure 19 for the flowchart. Any commands

issued during the Chip Erase operation are ignored.

Write Operation Status Detection

The SST39VF800Q/VF800 provide two software means

to detect the completion of a write (Program or Erase)

cycle, in order to optimize the system write cycle time. The

software detection includes two status bits: Data# Polling

(DQ

) and Toggle Bit (DQ

). The end of write detection

mode is enabled after the rising edge of WE#, which

initiates the internal program or erase operation.

The actual completion of the nonvolatile write is asynchro-

nous with the system; therefore, either a Data# Polling or

Toggle Bit read may be simultaneous with the completion

of the write cycle. If this occurs, the system may possibly

get an erroneous result, i.e., valid data may appear to

conflict with either DQ

or DQ

. In order to prevent spurious

rejection, if an erroneous result occurs, the software rou-

tine should include a loop to read the accessed location an

additional two (2) times. If both reads are valid, then the

device has completed the write cycle, otherwise the rejec-

tion is valid.

Data# Polling (DQ

)

When the SST39VF800Q/VF800 are in the internal Pro-

gram operation, any attempt to read DQ

will produce the

complement of the true data. Once the Program operation

is completed, DQ

will produce true data. The device is

8 Megabit Multi-Purpose Flash

SST39VF800Q / SST39VF800

Advance Information

TABLE 1: PRODUCT IDENTIFICATION TABLE

Address Data

Manufacturer’s Code 0000H 00BFH

Device Code 0001H 2781H

343 PGM T1.0

then ready for the next operation. During internal Erase

operation, any attempt to read DQ7 will produce a ‘0’. Once

the internal Erase operation is completed, DQ7 will pro-

duce a ‘1’. The Data# Polling is valid after the rising edge

of fourth WE# (or CE#) pulse for Program operation. For

Sector, Block or Chip Erase, the Data# Polling is valid after

the rising edge of sixth WE# (or CE#) pulse. See Figure 6

for Data# Polling timing diagram and Figure 17 for a

flowchart.

Toggle Bit (DQ

)

During the internal Program or Erase operation, any con-

secutive attempts to read DQ

will produce alternating 1’s

and 0’s, i.e., toggling between 1 and 0. When the internal

Program or Erase operation is completed, the DQ6 bit will

stop toggling. The device is then ready for the next opera-

tion. The Toggle Bit is valid after the rising edge of fourth

WE# (or CE#) pulse for Program operation. For Sector,

Block or Chip Erase, the Toggle Bit is valid after the rising

edge of sixth WE# (or CE#) pulse. See Figure 7 for Toggle

Bit timing diagram and Figure 17 for a flowchart.

Data Protection

The SST39VF800Q/VF800 provide both hardware and

software features to protect nonvolatile data from inadvert-

ent writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less than

5 ns will not initiate a write cycle.

Power Up/Down Detection: The Write operation is

inhibited when V

is less than 1.5V.

Write Inhibit Mode: Forcing OE# low, CE# high, or WE#

high will inhibit the Write operation. This prevents inadvert-

ent writes during power-up or power-down.

Software Data Protection (SDP)

The SST39VF800Q/VF800 provide the JEDEC approved

Software Data Protection scheme for all data alteration

operations, i.e., Program and Erase. Any Program opera-

tion requires the inclusion of the three byte sequence. The

three-byte load sequence is used to initiate the Program

operation, providing optimal protection from inadvertent

Write operations, e.g., during the system power-up or

power-down. Any Erase operation requires the inclusion of

six-byte sequence. The SST39VF800Q/VF800 devices

are shipped with the software data protection permanently

enabled. See Table 4 for the specific software command

codes. During SDP command sequence, invalid com-

mands will abort the device to read mode within T

. The

contents of DQ

-DQ

are “Don’t Care” during any SDP

command sequence.

Common Flash Memory Interface (CFI)

The SST39VF800Q/VF800 also contain the CFI informa-

tion to describe the characteristics of the device. In order to

enter the CFI Query mode, the system must write three-

byte sequence, same as product ID entry command with

98H (CFI Query command) to address 5555H in the last

byte sequence. Once the device enters the CFI Query

mode, the system can read CFI data at the addresses given

in tables 5 through 7. The system must write the CFI Exit

command to return to Read mode from the CFI Query

mode.

Product Identification

The Product Identification mode identifies the devices as

the SST39VF800Q, SST39VF800 and manufacturer as

SST. This mode may be accessed by hardware or software

operations. The hardware operation is typically used by a

programmer to identify the correct algorithm for the

SST39VF800Q/VF800. Users may wish to use the Soft-

ware Product Identification operation to identify the part

(i.e., using the device code) when using multiple manufac-

turers in the same socket. For details, see Table 3 for

hardware operation or Table 4 for software operation,

Figure 11 for the Software ID Entry and Read timing

diagram and Figure 18 for the ID Entry command sequence

flowchart.

Product Identification Mode Exit/CFI Mode Exit

In order to return to the standard Read mode, the Software

Product Identification mode must be exited. Exit is accom-

plished by issuing the Software ID Exit command se-

quence, which returns the device to the Read operation.

This command may also be used to reset the device to the

Read mode after any inadvertent transient condition that

apparently causes the device to behave abnormally, e.g.,

not read correctly. Please note that the Software ID Exit/CFI

Exit command is ignored during an internal Program or

Erase operation. See Table 4 for software command codes,

Figure 13 for timing waveform and Figure 18 for a flowchart.

DDQ

- I/O Power Supply

This feature is available only on the SST39VF800Q. This

pin functions as power supply pin for input/output buffers. It

should be tied to V

(2.7-3.6V) in a 3.0V-only system. It

should be tied to a 5.0V±10% (4.5-5.5V) power supply in a

mixed voltage system environment where flash memory

has to be interfaced with 5V system chips. The V

DDQ

pin is

not offered on the SST39VF800, instead it is a No Connect

pin.

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