FUJITSU SEMICONDUCTOR
DATA SHEET
Copyright 2016 FUJITSU SEMICONDUCTOR LIMITED
2016.12
Memory ReRAM
4M (512 K × 8) Bit SPI
MB85AS4MT
■ DESCRIPTION
MB85AS4MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 524,288
words × 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies
for forming the nonvolatile memory cells.
MB85AS4MT adopts the Serial Peripheral Interface (SPI).
MB85AS4MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85AS4MT can be used for 1.2 × 10
6
rewrite operations.
■ FEATURES
• Bit configuration : 4 Mbits (524,288 words × 8 bits)
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Write buffer size : 256 bytes
• Operating frequency : 5 MHz (Max)
• Data endurance : 1.2 × 10
6
times / byte
• Data retention : 10 years (+85 °C)
• Operating power supply voltage : 1.65 V to 3.6 V
• Operating power supply current : Rewrite current 1.3 mA (Typ)
Read-out current 0.2 mA (Typ@5 MHz)
Standby current 10 μA (Typ)
Sleep current 2 μA (Typ)
• Operation ambient temperature range : -40 °C to +85 °C
• Package : 8-pin plastic SOP (FPT-8P-M11)
RoHS compliant
DS501-00045-1v0-E
