go athena
#TITLE: Polysilicon Emitter Bipolar Example (PNP)
#Silvaco International 1994
line x loc=0.0 spacing=0.03
line x loc=0.2 spacing=0.02
line x loc=0.24 spacing=0.01
line x loc=0.3 spacing=0.015
line x loc=0.8 spacing=0.15
line y loc=0.0 spacing=0.01
line y loc=0.1 spacing=0.01
line y loc=0.4 spacing=0.02
line y loc=0.5 spacing=0.06
line y loc=1.0 spacing=0.15
init c.boron=2e16
# base implant
implant phos energy=100 dose=8e13
# base drive
diffuse time=5 temp=900
# deposit polysilicon
deposit poly thick=0.3 divisions=6 min.space=0.05
# Implant to dope polysilicon
implant bf2 dose=3e15 energy=35
# Pattern the poly
etch poly right p1.x=0.2
# relax the mesh in the substrate and extrinsic areas
relax y.min=.5
relax x.min=0.4
# emitter drive
method compress fermi
diffuse time=45 temp=900 nitrogen
# extrinsic emitter implant under spacer
implant phos dose=2e14 energy=70
# deposit spacer
deposit oxide thick=0.3 divisions=10 min.space=0.1
# etch the spacer back
etch oxide dry thick=0.3
# n+ base contact implant
implant arsenic dose=1e15 energy=50
# contact drive
diffuse time=30 temp=900 nitrogen
# put down Al and etch to form contacts
deposit alum thick=0.05 div=2
