FS150R12KT3.pdf

所需积分/C币:25 2014-08-11 18:10:52 309KB PDF
69
收藏 收藏
举报

FS150R12KT3.pdf
echnische Information/technical information eupec IGBT-Module IGBT-modules FS150R12KT3 orlau fi e Daten preliminary data Modul module lsolations-Prufspannung insulation test voltage RMS, f= 50 Hz. t= 1 min VIsoL 2,5 kV Material Modulgrundplatte material of module baseplate Material fur innere isolation material for internal insulation AI203 Kriechstrecke Kontakt-Kuhlkorper / terminal to heatsink 10,0 creepage distance Kontakt-Kontakt/terminal to terminal mm Luftstrecke Kontakt-Kuhlkorper /terminal to heatsink clearance distance Kontakt-Kontakt /terminal to terminal mm Vergleichszahl der Kriechwegbildung comparative tracking index CTI min Ubergangs-Warmewiderstand pro Modul per module thermal resistance, case to heatsink APaste =1 W/(m- K)/Grease =1 W/(m-K) RicH 0,009 K/ Modulinduktivitat tray inductance module 21 nH Modulleitungswiderstand, module lead resistance Tc=25 C, pro Zweig /per arm 1.80 mo terminals- chip Hochstzulassige Sperrschichttemperatur maximum junction temperature 150 Temperatur im Schaltbetrieb temperature under switching conditions T,40 125°c Lagertemperatur -40 storage temperature 125°C Anzugsdrehmoment f. mech. Befestigung Schraube /screw M5 mounting torque M 6,00Nm Gewicht weight 300 Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen This technical information specifies semiconductor devices but guarantees no characteristics. It is valid with the appropriate technical explanations prepared by: Mark Munzer date of publication: 2003-4-8 approved by Robert Severin revision 2.0 3 echnische Information/technical information eupec IGBT-Module IGBT-modules FS150R12KT3 Vorlaufige Daten preliminary data Ausgangskennlinie IGBT-Wechselr(typisch) Ausgangskennlinienfeld IGBT-Wechselr(typisch) output characteristic IGBT-inverter(typical) output characteristic IGBT-inverter(typical) Ic =f(VcE) VGE =15V Tv=125 300 300 270 Tv=25°c 70 27 VGE=19V i=125C 240 VGE=15V VGE=13V VGE=11V 210 210 VGE 9V 150 90 0 00,51.01,52,02,53,03,5 000,51,01,5202,53,03,54,04,55,0 CE VCE LV Ubertragungscharakteristik IGBT-Wechselr (typisch) Schaltverluste IGBT-Wechselr (typisch) transfer characteristic IGBT-inverter(typical) switching losses IGBT-inverter(typical) Ic =f(VGE Ic), Eoff=f( VCE =20 V VGE =*15 V, RGon = 2, 4 Q2, RGo11 = 2, 4 Q, VCE= 600V TVI=125C 300 270 Tvj= 25C E T=125C E off 240 30 210 150 15 0 10 GE IC [ Al prepared by: Mark Munzer date of publication: 2003-4-8 approved by Robert Severin revision 2.0 echnische Information/technical information eupec IGBT-Module IGBT-modules FS150R12KT3 orlau fi e Daten preliminary data Schaltyerluste iGbt-we 〔 typisch) Transienter warmewiderstand igbt-wechselr switching losses IGBT-In (typical) transient thermal impedance IGBT-inverter Eon=f (RG), Eoft=f (Ro ZthJc=f(t VGE=±15V,lc=150A,VcE=600V,Tv=125°c E JC: IGBT E 15 5 rW]:0,003410010390090610,07559 τs]:0.00001190.0023640.026010.06499 0 0.01 810121416 0,01 10 RG [Q2] t[s Sicherer Ruckwarts-Arbeitsbereich IGBT-Wr(RBSOA) DurchlaBkennlinie der Diode-Wechselr (typisch) reverse bias safe operating area IGBT-inV (RBSOA) forward characteristic of diode-inverter (typical) IF =f(VF) VGE =+15V, RGoff=2, 4Q, TvJ= 125C 300 270 Ti=25°C 300 --Tvj=125°C 250 210 180 200 150 12 90 6 Ic Modul Ic, Chip 0 0200400600800100012001400 0,00,20,40,60,81,01,21,41,61,82,02,22,4 CE VE LV prepared by: Mark Munzer date of publication: 2003-4-8 approved by Robert Severin revision 2.0 5 echnische Information/technical information eupec IGBT-Module IGBT-modules FS150R12KT3 Vorlaufige Daten preliminary data Schaltverluste Diode-Wechselr (typisch) Schaltverluste Diode-Wechselr. (typisch) switching losses diode-inverter(typical switching losses diode-inverter(typical) Erec=f(RG) RGon=2, 4 Q, VCE= 600V,Tv=125C F=150AVcE=600V,Tv」=125°c 18 Er 18 Er 16 14 12 E10 E10 4 4 0 50200250300 RG Q] Transienter Warmewiderstand diode-Wechseln transient thermal impedance diode- inverter ZthJc=f(t) Z: hJc: Diode 0.1 t|l:00001190,002364002601005499 0.001 01 t [sI prepared by: Mark Munzer date of publication: 2003-4-8 approved by Robert Severin revision 2.0 echnische Information/technical information eupec IGBT-Module IGBT-modules FS150R12KT3 Vorlaufige Daten preliminary data Schaltplan circuit diagram 21,2,23 + 國■ .54 013,141.15 Gehauseabmessungen/ package outlines 24.3 eupec ITGET 23 的25-. 2 丫2:1 0.8 4啁米 阝,4 B4.5引+ ,6 CO t= ale mabe mit e ner taleranz von DU prepared by: Mark Munzer date of publication: 2003-4-8 approved by Robert Severin revision 2.0 7 Terms Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This data sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. there will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. should you require product information in excess of the data given in the data Sheet, please contact your local sales office viawww.eupec.com/sales&contact Warning Due to technical requirements the products may contain dangerous substances For information on the types in question please contact your local Sales office via www.eupec.com/sales&contact

...展开详情
试读 8P FS150R12KT3.pdf
立即下载
限时抽奖 低至0.43元/次
身份认证后 购VIP低至7折
一个资源只可评论一次,评论内容不能少于5个字
您会向同学/朋友/同事推荐我们的CSDN下载吗?
谢谢参与!您的真实评价是我们改进的动力~
关注 私信
上传资源赚钱or赚积分
最新推荐
FS150R12KT3.pdf 25积分/C币 立即下载
1/8
FS150R12KT3.pdf第1页
FS150R12KT3.pdf第2页

试读结束, 可继续读1页

25积分/C币 立即下载