Data Sheet, Rev. 1.1, December 2004
Never stop thinking.
BTS 7960
High Current PN Half Bridge
NovalithIC
43 A, 7 mΩ + 9 mΩ
Automotive Power
TM
High Current PN Half Bridge
BTS 7960
Data Sheet 1 Rev. 1.1, 2004-12-07
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Basic Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
1Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
4 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
4.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . 16
4.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . 17
4.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . 20
5 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
6 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
7 Package Outlines P-TO-263-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
8 Package Outlines P-TO-220-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Data Sheet 2 Rev. 1.1, 2004-12-07
Type Ordering Code Package
BTS 7960B Q67060-S6160 P-TO-263-7
BTS 7960P on request P-TO-220-7
High Current PN Half Bridge
NovalithIC
BTS 7960B
BTS 7960P
Product Summary
The BTS 7960 is a fully integrated high current half
bridge for motor drive applications. It is part of the
NovalithIC
TM
family containing one p-channel highside
MOSFET and one n-channel lowside MOSFET with an
integrated driver IC in one package. Due to the p-channel
highside switch the need for a charge pump is eliminated
thus minimizing EMI. Interfacing to a microcontroller is
made easy by the integrated driver IC which features
logic level inputs, diagnosis with current sense, slew rate
adjustment, dead time generation and protection against
overtemperature, overvoltage, undervoltage,
overcurrent and short circuit.
The BTS 7960 provides a cost optimized solution for
protected high current PWM motor drives with very low
board space consumption.
Basic Features
• Path resistance of typ. 16 mΩ @25°C
• Low quiescent current of typ. 7 µA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Switched mode current limitation for reduced power dissipation in overcurrent
• Current limitation level of 43 A typ.
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
BTS 7960B
P-TO-263-7
BTS 7960P
P-TO-220-7
TM
High Current PN Half Bridge
BTS 7960
Overview
Data Sheet 3 Rev. 1.1, 2004-12-07
1Overview
The BTS 7960 is part of the NovalithIC family containing three separate chips in one
package: One p-channel highside MOSFET and one n-channel lowside MOSFET
together with a driver IC, forming a fully integrated high current half-bridge. All three
chips are mounted on one common leadframe, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on
state resistance. Due to the p-channel highside switch the need for a charge pump is
eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew
rate adjustment, dead time generation and protection against overtemperature,
overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can be
combined with other BTS 7960 to form H-bridge and 3-phase drive configurations.
1.1 Block Diagram
Figure 1 Block Diagram
IS
SR
Top-chip
INH
IN
GND
OUT
LS base-chip
VS
HS base-chip
Gate Driver
Dead Time Gen.
Slew Rate Adj.
UV Shut Down
OV Lock Out
OT Shut Down
Current Lim.
Diagnosis
Current Sense
BTS 7960
High Current PN Half Bridge
BTS 7960
Overview
Data Sheet 4 Rev. 1.1, 2004-12-07
1.2 Terms
Following figure shows the terms used in this data sheet.
Figure 2 Terms
I
IN
V
IN
OUT
I
INH
V
INH
V
SR
I
SR
V
IS
I
IS
V
VS
,V
S
I
OUT
, I
L
V
OUT
V
DS(HS)
GND
I
GND,
I
D(LS)
I
VS
, -I
D(HS)
IN
INH
SR
IS
VS
V
SD (L S)
BTS 7960
