MINIMOS is a software tool for the numerical simulation of semiconductor fieldeffect
transistors. The
first version was released over 10 years ago, and since then the code has undergone continuous extensions
and improvements, culminating in 1991’s Version 5.2, which is capable of modelling silicon
MOSFETs and SOI transistors as well as gallium arsenide MESFETs. The fundamental semiconductor
equations wich are solved in MINIMOS numerically comprise Poisson’s equation and two carrier continuity
equations for electrons and holes. For the various coefficients such as carrier mobility, carrier
generation/recombination and impact ionization rates carefully chosen models are implemented. The
numerical schemes of MINIMOS are designed to handle planar and nonplanar
device structures in both
two and three space dimensions.