2009-IEEE-CPT.pdf

See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/224381354

Dependence of the Fracture of PowerTrench MOSFET Device on Its

Topography in Cu Bonding Process

ArticleinIEEE Transactions on Components and Packaging Technologies · April 2009

DOI: 10.1109/TCAPT.2008.2005733·Source: IEEE Xplore

CITATIONS

8

READS

1,033

5 authors, including:

All content following this page was uploaded by Qi Wang on 12 March 2015.

The user has requested enhancement of the downloaded file.