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K4A4G165WF-BCTD
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- 1 -
K4A4G165WF
Rev. 0.9, Sep. 2018
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
© 2018 Samsung Electronics Co., Ltd.GG All rights reserved.
Preliminary
4Gb F-die DDR4 SDRAM x16 only
96FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
1.2V
- 2 -
DDR4 SDRAMK4A4G165WF datasheet
Preliminary Rev. 0.9
Revision History
Revision No. History Draft Date Remark Editor
0.0 - First SPEC release 12th Jul, 2018 Target H.G.Lee
J.Y.Bae
0.9 - Preliminary datasheet. 19th Sep, 2018 Preliminary H.G.Lee
- Update note for Output Driver DC Electrical Characteristics, assuming
RZQ=240ohm; entire operating temperature range; after proper ZQ cali-
bration table.
J.Y.Bae
- Add Output Driver Temperature and Voltage Sensitivity section.
- Update note for Input/Output capacitance.
- Update AC Timing table.
1. tDVWp : TBD -> 0.72 [UI] @ DDR-2933
2. tGEAR_setup/tGEAR_hold : TBD -> 2 [nCK] @ DDR-2933
3. Update notes.
- 3 -
DDR4 SDRAMK4A4G165WF datasheet
Preliminary Rev. 0.9
Table Of Contents
4Gb F-die DDR4 SDRAM x16 only
1. ORDERING INFORMATION ............................................................................................................................................................... 4
2. KEY FEATURES ................................................................................................................................................................................. 4
3. PACKAGE PINOUT/MECHANICAL DIMENSION & ADDRESSING .................................................................................................. 5
3.1 x16 Package Pinout (Top view): 96ball FBGA Package.................................................................................................................5
3.2 FBGA Package Dimension (x16)....................................................................................................................................................6
4. INPUT/OUTPUT FUNCTIONAL DESCRIPTION ................................................................................................................................ 7
5. DDR4 SDRAM ADDRESSING ............................................................................................................................................................ 9
6. ABSOLUTE MAXIMUM RATINGS ...................................................................................................................................................... 10
6.1 DRAM Component Operating Temperature Range........................................................................................................................10
7. AC & DC OPERATING CONDITIONS ................................................................................................................................................ 10
8. AC AND DC INPUT MEASUREMENT LEVELS ................................................................................................................................. 11
8.1 AC And DC Logic Input Levels for Single-Ended Signals...............................................................................................................11
8.2 AC and DC Input Measurement Levels: VREF Tolerances............................................................................................................11
8.3 AC and DC Logic Input Levels for Differential Signals ...................................................................................................................12
8.3.1. Differential Signals Definition ..................................................................................................................................................12
8.3.2. Differential Swing Requirements for Clock (CK_t - CK_c) ......................................................................................................12
8.3.3. Single-ended Requirements for Differential Signals ...............................................................................................................13
8.3.4. Address, Command and Control Overshoot and Undershoot specifications..........................................................................14
8.3.5. Clock Overshoot and Undershoot Specifications....................................................................................................................15
8.3.6. Data, Strobe and Mask Overshoot and Undershoot Specifications........................................................................................16
8.4 Slew Rate Definitions......................................................................................................................................................................17
8.4.1. Slew Rate Definitions for Differential Input Signals (CK) ........................................................................................................17
8.4.2. Slew Rate Definition for Single-ended Input Signals (CMD/ADD) ..........................................................................................18
8.5 Differential Input Cross Point Voltage.............................................................................................................................................19
8.6 CMOS rail to rail Input Levels .........................................................................................................................................................20
8.6.1. CMOS rail to rail Input Levels for RESET_n ...........................................................................................................................20
8.7 AC and DC Logic Input Levels for DQS Signals.............................................................................................................................21
8.7.1. Differential signal definition .....................................................................................................................................................21
8.7.2. Differential swing requirements for DQS (DQS_t - DQS_c)....................................................................................................21
8.7.3. Peak voltage calculation method ............................................................................................................................................22
8.7.4. Differential Input Cross Point Voltage .....................................................................................................................................23
8.7.5. Differential Input Slew Rate Definition ....................................................................................................................................24
9. AC AND DC OUTPUT MEASUREMENT LEVELS ............................................................................................................................. 25
9.1 Output Driver DC Electrical Characteristics....................................................................................................................................25
9.1.1. Output Driver Temperature and Voltage Sensitivity................................................................................................................27
9.1.2. Alert_n output Drive Characteristic .........................................................................................................................................27
9.1.3. Output Driver Characteristic of Connectivity Test (CT) Mode.................................................................................................28
9.2 Single-ended AC & DC Output Levels............................................................................................................................................29
9.3 Differential AC & DC Output Levels................................................................................................................................................29
9.4 Single-ended Output Slew Rate .....................................................................................................................................................30
9.5 Differential Output Slew Rate .........................................................................................................................................................31
9.6 Single-ended AC & DC Output Levels of Connectivity Test Mode .................................................................................................32
9.7 Test Load for Connectivity Test Mode Timing ................................................................................................................................33
10. SPEED BIN ....................................................................................................................................................................................... 34
10.1 Speed Bin Table Note...................................................................................................................................................................41
11. IDD AND IDDQ SPECIFICATION PARAMETERS AND TEST CONDITIONS ................................................................................. 42
11.1 IDD, IPP and IDDQ Measurement Conditions..............................................................................................................................42
11.2 4Gb DDR4 SDRAM F-die IDD SPECIFICATION TABLE.............................................................................................................57
12. INPUT/OUTPUT CAPACITANCE ..................................................................................................................................................... 59
13. ELECTRICAL CHARACTERISTICS & AC TIMING .......................................................................................................................... 61
13.1 Reference Load for AC Timing and Output Slew Rate .................................................................................................................61
13.2 tREFI.............................................................................................................................................................................................61
13.3 Clock Specification .......................................................................................................................................................................62
13.3.1. Definition for tCK(abs)...........................................................................................................................................................62
13.3.2. Definition for tCK(avg)...........................................................................................................................................................62
13.3.3. Definition for tCH(avg) and tCL(avg)....................................................................................................................................62
13.3.4. Definition for tERR(nper).......................................................................................................................................................62
14. TIMING PARAMETERS BY SPEED GRADE ................................................................................................................................... 63
14.1 Rounding Algorithms ...................................................................................................................................................................69
14.2 The DQ input receiver compliance mask for voltage and timing ..................................................................................................70
14.3 Command, Control, and Address Setup, Hold, and Derating .......................................................................................................74
14.4 DDR4 Function Matrix ..................................................................................................................................................................76
- 4 -
DDR4 SDRAMK4A4G165WF datasheet
Preliminary Rev. 0.9
1. ORDERING INFORMATION
NOTE :
1) Speed bin is in order of CL-tRCD-tRP.
2) Backward compatible to lower frequency
3) 13th digit stands for below.
"C" : Commercial temp/Normal power
2. KEY FEATURES
NOTE :
1) This data sheet is an abstract of full DDR4 specification and does not cover the common features which are described in “DDR4 SDRAM Device Operation & Timing Dia-
gram”.
2) The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.
[Table 1] Samsung 4Gb DDR4 F-die ordering information table
Organization
DDR4-2666 (19-19-19)
2)
DDR4-3200 (22-22-22)
2)
Package
256Mx16 K4A4G165WF-BCTD K4A4G165WF-BCWE 96FBGA
[Table 2] 4Gb DDR4 F-die Speed bins
Speed
DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 DDR4-3200
Unit
11-11-11 13-13-13 15-15-15 17-17-17 19-19-19 22-22-22
tCK(min) 1.25 1.071 0.937 0.833 0.75 0.625 ns
CAS Latency 11 13 15 17 19 22 nCK
tRCD(min) 13.75 13.92 14.06 14.16 14.25 13.75 ns
tRP(min) 13.75 13.92 14.06 14.16 14.25 13.75 ns
tRAS(min) 35 34 33 32 32 32 ns
tRC(min) 48.75 47.92 47.06 46.16 46.25 45.75 ns
• JEDEC standard 1.2V (1.14V~1.26V)
•V
DDQ
= 1.2V (1.14V~1.26V)
•V
PP
= 2.5V (2.375V~2.75V)
•
800 MHz f
CK
for 1600Mb/sec/pin,933 MHz f
CK
for 1866Mb/sec/pin,
1067MHz f
CK
for 2133Mb/sec/pin, 1200MHz f
CK
for 2400Mb/sec/pin,
1333MHz f
CK
for 2666Mb/sec/pin, 1600MHz f
CK
for 3200Mb/sec/pin
• 8 Banks (2 Bank Groups)
• Programmable CAS Latency (posted CAS):
10,11,12,13,14,15,16,17,18,19,20,22,24
• Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600), 10,12
(DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400), 14,18 (DDR4-
2666) and 16,20 (DDR4-3200)
• 8-bit pre-fetch
• Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read
or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal (self) calibration: Internal self calibration through ZQ pin
(RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than T
CASE
85C, 3.9us at
85C < T
CASE
< 95 C
•
• Asynchronous Reset
• Package: 96 balls FBGA - x16
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
• CRC (Cyclic Redundancy Check) for Read/Write data security
• Command address parity check
• DBI (Data Bus Inversion)
• Gear down mode
• POD (Pseudo Open Drain) interface for data input/output
• Internal VREF for data inputs
• External VPP for DRAM Activating Power
• hPPR is supported
The 4Gb DDR4 SDRAM F-die is organized as a 32Mbit x 16 I/Os x 8banks
device. This synchronous device achieves high speed double-data-rate
transfer rates of up to 3200Mb/sec/pin (DDR4-3200) for general applica-
tions.
The chip is designed to comply with the following key DDR4 SDRAM fea-
tures such as posted CAS, Programmable CWL, Internal (Self) Calibration,
On Die Termination using ODT pin and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of exter-
nally supplied differential clocks. Inputs are latched at the crosspoint of dif-
ferential clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-
ion. The address bus is used to convey row, column, and bank address
information in a RAS/CAS multiplexing style. The DDR4 device operates
with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) V
DDQ
and 2.5V (2.375V~2.75V) V
PP
.
The 4Gb DDR4 F-die device is available in 96ball FBGAs(x16).
- 5 -
DDR4 SDRAMK4A4G165WF datasheet
Preliminary Rev. 0.9
3. PACKAGE PINOUT/MECHANICAL DIMENSION & ADDRESSING
3.1 x16 Package Pinout (Top view): 96ball FBGA Package
1 2 3 4 5 6 7 8 9
A VDDQ VSSQ DQU0 DQSU_c VSSQ VDDQ A
B VPP VSS VDD DQSU_t DQU1 VDD B
C VDDQ DQU4 DQU2 DQU3 DQU5 VSSQ C
D VDD VSSQ DQU6 DQU7 VSSQ VDDQ D
E VSS
DMU_n/
DBIU_n
VSSQ
DML_n
DBIL_n
VSSQ VSS E
F VSSQ VDDQ DQSL_c DQL1 VDDQ ZQ F
G VDDQ DQL0 DQSL_t VDD VSS VDDQ G
H VSSQ DQL4 DQL2 DQL3 DQL5 VSSQ H
J VDD VDDQ DQL6 DQL7 VDDQ VDD J
K VSS CKE ODT CK_t CK_c VSS K
L VDD
WE_n/
A14
ACT_n CS_n RAS_n VDD L
M VREFCA BG0 A10/AP A12/BC_n CAS_n VSS M
N VSS BA0 A4 A3 BA1 TEN N
P RESET_n A6 A0 A1 A5 ALERT_n P
R VDD A8 A2 A9 A7 VPP R
T VSS A11 PAR NC A13 VDD T
Populated ball
Ball not populated
Ball Locations (x16)
Top view
(See the balls through the package)
1234 89567
A
B
C
D
E
F
G
H
J
K
L
N
M
P
R
T
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