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0 2 4 6 8 10 12 14 16 18 20

- Gate-to- Source Voltage (V)

DS(on)

- On-State Resistance (mΩ)

= 25°C, I

= 16A

= 125°C, I

= 16A

G001

0 4 8 12 16 20 24 28 32 36 40

- Gate Charge (nC)

- Gate-to-Source Voltage (V)

= 16A

= 50V

G001

P0093-01

Product

Folder

Sample &

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Software

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Community

CSD19531Q5A

ZHCSBK7B –SEPTEMBER 2013–REVISED MAY 2014

CSD19531Q5A 100V N 通通道道 NexFET™ 功功率率金金属属氧氧化化物物半半导导体体场场效效应应晶晶

体体管管 (MOSFET)

1 特特性性

产产品品概概要要

• 超低 Q

和 Q

= 25°C 典典型型值值单单位位

• 低热阻

漏源电压 100 V

• 雪崩额定值

栅极电荷总量 (10V) 37 nC

栅漏栅极电荷 6.6 nC

• 无铅端子镀层

= 6V 6.0 mΩ

• 符合 RoHS 环保标准

DS(on)

漏源导通电阻

= 10V 5.3 mΩ

• 无卤素

GS(th)

阀值电压 2.7 V

• 小外形尺寸无引线 (SON) 5mm x 6mm 塑料封装

。。

2 应应用用范范围围

订订购购信信息息

• 初级侧电信应用

器器件件介介质质数数量量封封装装出出货货

CSD19531Q5A 13 英寸卷带 2500 SON 5mm x

• 次级侧同步整流器

6mm 卷带封装

CSD19531Q5AT 7 英寸卷带 250

• 电机控制

塑料封装

(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。

3 说说明明

最最大大绝绝对对额额定定值值

这款 100V，5.3mΩ，SON 5mm × 6mm NexFET™ 功

= 25°C 值值单单位位

率 MOSFET 被设计成在功率转换应用中大大降低损

漏源电压 100 V

耗。

栅源电压 ±20 V

持续漏极电流（受封装限制） 100

顶顶视视图图

持续漏极电流（受芯片限制），T

= 25°C

110 A

时测得

持续漏极电流

(1)

脉冲漏极电流

(2)

337 A

功率耗散

(1)

3.3

功率耗散，T

= 25°C 125

，运行结温和

-55 至 150 °C

stg

储存温度范围

雪崩能量，单一脉冲

180 mJ

= 60A，L = 0.1mH，R

= 25Ω

(1) R

θJA

= 40°C/W，这是在一个厚度 0.06 英寸环氧树脂 (FR4) 印

刷电路板 (PCB) 上的 1 英寸

，2 盎司的铜过渡垫片上测得的

典型值。

(2) 最大 R

θJC

= 1.0°C/W，持续时间 ≤100μs，占空比 ≤1%

DS(on)

与与 V

间间的的关关系系栅栅极极电电荷荷

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

English Data Sheet: SLPS406

CSD19531Q5A

ZHCSBK7B –SEPTEMBER 2013–REVISED MAY 2014

www.ti.com.cn

目目录录

1 特特性性.......................................................................... 1 6 器器件件和和文文档档支支持持........................................................ 7

6.1 Trademarks............................................................... 7

2 应应用用范范围围................................................................... 1

6.2 Electrostatic Discharge Caution................................ 7

3 说说明明.......................................................................... 1

6.3 Glossary.................................................................... 7

4 修修订订历历史史记记录录 ........................................................... 2

7 机机械械封封装装和和可可订订购购信信息息 ............................................. 8

5 Specifications......................................................... 3

7.1 Q5A 封装尺寸............................................................ 9

5.1 Electrical Characteristics........................................... 3

7.2 建议印刷电路板 (PCB) 布局 .................................... 10

5.2 Thermal Characteristics ............................................ 3

7.3 建议模板开口........................................................... 11

5.3 Typical MOSFET Characteristics.............................. 4

7.4 Q5A 卷带信息.......................................................... 11

4 修修订订历历史史记记录录

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (January 2014) to Revision B Page

• 已添加外壳温度保持在 25°C 时的最大功耗耗散一行 ............................................................................................................. 1

• Changed Figure 1 from a normalized R

θJA

curve to a normalized R

θJC

curve........................................................................ 4

• Updated the safe operating area in Figure 10 ....................................................................................................................... 6

Changes from Original (September 2013) to Revision A Page

• 已在说明中添加更多信息 ........................................................................................................................................................ 1

• 已添加小卷带订购信息............................................................................................................................................................ 1

• 已从绝对最大额定值表内的持续漏极电流（受封装限制）中删除 T

= 25°C 条件.................................................................. 1

• 已将脉冲漏极电流增加为 337A .............................................................................................................................................. 1

• 已更新脉冲漏极电流条件 ....................................................................................................................................................... 1

• Changed Typ Rth

= 99°C/W to Rth

= 100°C/W in Figure 1 ............................................................................................ 4