Final Datasheet 1 Rev Nov 22, 2019
NV6117
QFN 5 x 6 mm
Simplified schematic
1. Features
GaNFast™ Power IC
• Monolithically-integrated gate drive
• Wide logic input range with hysteresis
• 5 V / 15 V input-compatible
• Wide V
CC
range (10 to 30 V)
• Programmable turn-on dV/dt
• 200 V/ns dV/dt immunity
• 650 V eMode GaN FET
• Low 120 mΩ resistance
• Zero reverse recovery charge
• 2 MHz operation
Small, low-profile SMT QFN
• 5 x 6 mm footprint, 0.85 mm profile
• Minimized package inductance
2. Description
The NV6117 is a 650 V GaNFast™ power IC,
optimized for high frequency, soft-switching topologies.
Monolithic integration of FET, drive and logic creates
an easy-to-use ‘digital-in, power-out’ high-performance
powertrain building block, enabling designers to create
the fastest, smallest, most efficient integrated
powertrain in the world.
The highest dV/dt immunity, high-speed integrated
drive and industry-standard low-profile, low-inductance,
5 x 6 mm SMT QFN package allow designers to exploit
Navitas GaN technology with simple, quick, dependable
solutions for breakthrough power density and efficiency.
Navitas’ GaNFast™ power ICs extend the
capabilities of traditional topologies such as flyback,
half-bridge, resonant, etc. to MHz+ and enable the
commercial introduction of breakthrough designs.
3. Topologies / Applications
• AC-DC, DC-DC, DC-AC
• Buck, boost, half bridge, full bridge
• Active Clamp Flyback, LLC resonant, Class D
• Quasi-Resonant Flyback
• Mobile fast-chargers, adapters
• Notebook adaptors
• LED lighting, solar micro-inverters
• TV / monitor, wireless power
• Server, telecom & networking SMPS
Environmental
• RoHS, Pb-free, REACH-compliant
4. Typical Application Circuits
DC
OUT
(+)
Boost
DC
IN
(+)
DC
IN
(-) DC
OUT
(-)
10V to 24V
V
CC
D
Z
V
DD
PWM
S
NV6117
D
REG
dV/dt
10V to 24V
DC
IN
(+)
DC
IN
(-)
PGND
V
CC
D
Z
V
DD
PWM
Half
Bridge
Driver
IC
NV6117
NV6117
S
D
REG
dV/dt
S
D
REG
dV/dt
V
CC
D
Z
V
DD
PWM
Half-bridge
650 V GaNFast™ Power IC
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