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NPTB00004A
NDS-036 Rev. 2, 011414
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
Built using the SIGANTIC
®
process - A proprietary GaN-on-Silicon technology
DC-6 GHz
5W
GaN HEMT
Symbol Parameter Min Typ Max Units
G
SS
Small-signal Gain - 16 - dB
P
SAT
Saturated Output Power - 37.1 - dBm
SAT
Efficiency at Saturated Output Power - 63.7 - %
G
P
Gain at P
OUT
= 4W 12.8 14.8 - dB
Drain Efficiency at P
OUT
= 4W 45 57 - %
V
DS
Drain Voltage - 28 - V
Ruggedness: Output Mismatch, all phase angles VSWR = 15:1, No Device Damage
RF Specifications (CW, 2.5 GHz): V
DS
= 28V, I
DQ
= 50mA, T
C
= 25°C
Product Description
The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 5W
(37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below
3GHz, the NPTB00004A is a drop in replacement for the NPTB00004.
Features
Broadband operation from DC-6 GHz
28V Operation
Industry Standard Plastic Package
High Drain Efficiency (>55%)
Drop in Replacement for NPTB00004
Applications
Broadband General Purpose
Defense Communications
Land Mobile Radio
Wireless Infrastructure
ISM Applications
VHF/UHF/L-Band Radar
