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G040P04M
www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466(A1778-V1.0)
Absolute Maximum Ratings T
C
= 25ºC, unless otherwise noted
Pulsed Drain Current (note1)
Single pulse avalanche energy (note2)
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
P-Channel Enhancement Mode Power MOSFET
Description
The G040P04M uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
General Features
l V
DS
-40V
l I
D
(at V
GS
= -10V) -222A
l R
DS(ON)
(at V
GS
= -10V) < 3.5mΩ
l R
DS(ON)
(at V
GS
= -4.5V) < 4.5mΩ
l 100% Avalanche Tested
l RoHS Compliant
Application
l Power switch
l DC/DC converters
Schematic diagram
TO-263