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超结MOS，Rds<=17毫欧

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国产超结MOS，品牌：尚阳通； Vds = 600V,Rds 17毫欧，自身内阻是非小，适用于电源LLC等类产品应用。

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Datasheet

17mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R017FB

Nov. 2022, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD.

General Description

The Sanrise SRC60R017FB is a high voltage

power MOSFET, fabricated using advanced super

junction technology. The resulting device has

extremely low on resistance, low gate charge and

fast switching time, making it especially suitable

for applications which require superior power

density and outstanding efficiency.

The SRC60R017FB break down voltage is 600V

and it has a high rugged avalanche characteristics.

The SRC60R017FB is available in TO-247

package.

Features

 Ultra Low R

DS(ON)

= 17mΩ @ V

= 10V.

 Ultra Low Gate Charge, Qg=291nC typ.

 Fast switching capability

 Robust design with better EAS performance

 EMI Improved

 Non-automotive Qualified

 Ultra-fast body diode

Symbol

Figure 1 Symbol of SRC60R017FB

Package Type

TO-247

Figure 2 Package Type of SRC60R017FB

Application

 Sever / Telecom Power

 EV Charger

Ordering Information

SRC60R017FB□□–□

Circuit Type E: Lead Free

G: Green

Package Blank: Tube

T: TO-247 TR: Tape & Reel

Package

Part Number

Marking ID

Packing Type

Lead Free

Green

Lead Free

Green

TO-247

SRC60R017FBT-E

SRC60R017FBT-G

SRC60R017FBTE

SRC60R017FBTG

Tube

Datasheet

17mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R017FB

Nov. 2022, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD.

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

DSS

600

Gate-Source Voltage (static)

GSS

±20

Gate-Source Voltage (dynamic), AC f>1Hz

GSS

±30

Power Dissipation（Tc=25℃,TO-247）

tot

657

Continuous Drain Current

=25ºC

120

=100ºC

=125ºC

Pulsed Drain Current (Note 2)

360

Avalanche Energy, Single Pulse (Note 3)

600

Avalanche Energy, Repetitive (Note 2)

0.6

Avalanche Current, Repetitive (Note 2)

5.5

Continuous Diode Forward Current

120

Diode Pulse Current

S.PULSE

360

MOSFET dv/dt Ruggedness, V

<=480V

dv/dt

V/ns

Reverse Diode dv/dt, V

<=480V, I

<=I

dv/dt

V/ns

Operating Junction Temperature

150

ºC

Storage Temperature

STG

-55 to 150

ºC

Lead Temperature (Soldering, 10 sec)

LEAD

260

ºC

Note:

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. I

= 5.5A, V

= 60V, R

= 25Ω, Starting T

= 25°C

Thermal characteristics

Parameter

Symbol

Min

Typ

Max

Unit

Thermal resistance, Junction-to-Case

TO-247

thJC

0.19

ºC /W

Thermal resistance, Junction-to-Ambient

TO-247

thJA

ºC /W

Datasheet

17mΩ, 600V, Super Junction N-Channel Power MOSFET SRC60R017FB

Nov. 2022, Rev.1.2 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD.

Electrical Characteristics

= 25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Statistic Characteristics

Drain-Source Breakdown Voltage

DSS

=0V, I

=250uA

600

Zero Gate Voltage Drain Current

DSS

=600V, V

=0V

Gate-Body Leakage Current

Forward

GSSF

=30V, V

=0V

200

Reverse

GSSR

=-30V, V

=0V

-200

Gate Threshold Voltage

GS(TH)

, I

=2.9mA

3.0

4.0

5.0

Static Drain-Source On-Resistance

DS(ON)

=10V, I

=40A

15.1

mΩ

Gate Resistance

f=1MHz, Open Drain

1.3

Dynamic Characteristics

Input Capacitance

ISS

=400V, V

=0V,

f=100KHz

13.7

Output Capacitance

OSS

222

Effective output capacitance, energy

NOTE5

O(er)

=0V,

=0…480V

291

Effective output capacitance, time

NOTE6

O(tr)

237

Turn-on Delay Time

d(on)

=400V, I

=60A

=2Ω, V

=12V

73.2

Rise Time

21.6

Turn-off Delay Time

d(off)

184

Fall Time

12.4

Gate Charge Characteristics

Gate to Source Charge

=400V, I

=60A

=0 to 10V

Gate to Drain Charge

Gate Charge Total

290

Gate Plateau Voltage

plateau

6.5

Reverse Diode Characteristics

Drain-Source Diode Forward Voltage

=0V, I

=40A

0.85

1.1

Reverse Recovery Time

=400V, I

=50A

/dt=100A/us

195

Reverse Recovery Charge

1.8

Peak Reverse Recovery Current

rrm

Note:

5. C

O(er)

is a fixed capacitance that gives the same stored energy as C

OSS

while V

is rising from 0 to 480V

6. C

O (tr)

is a fixed capacitance that gives the same charging time as C

OSS

while V

is rising from 0 to 480 V

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