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www.rfintc.com
RFIC Technology Corporation
AP1110
2.4~2.5 GHz Power Amplifier
AP1110
1of 10
For more information,please contact us at:
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
© 2006 RFIC Technology Corporation All rights reserved.
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
2008. 08. 29 Update
AP1110 is a linear, low current power amplifier
in ISM band utilizing InGaP /GaAs HBT
process. The AP1110 is well suitable to be
used for portable, low current 2.4GHz WLAN
applications as well as for BT (Bluetooth)
Class1 applications.
AP1110 is packaged in 2x2 compact profile.
For WLAN application, it features low current of
85mA at linear power of 18.5dBm, gain of
26dB under 3.3V. For Bluetooth applications, it
features of gain at 26 dB; typical power of
23dBm and PAE of 40% under 3.3V. AP1110
is also suitable for the new BT 2.0 (EDR)
standard.
Major Applications
• Bluetooth Class 1 including V1.1,1.2
& (2.0)EDR standard
• IEEE 802.11b/g WLAN system
• WLAN Portable Devices
• WLAN USB Devices
• Other 2.4 GHz ISM Band
Ultra Small Profile: 2x2(mm), DFN-8pin
WLAN Applications:
(Under Vc=3.3V, Vref=2.8V)
• LOW Current: 85mA at 18.5dBm
• High efficiency: PAE: 25% at 18dBm
• Gain: 26 dB
BT Applications:
(BT V.1.1&1.2, Under Vc=3.3V, Vref=2.85V)
• LOW Current: 85mA at 18dBm
60mA at 16dBm
50mA at 14dBm
• High efficiency: PAE: 40% at 23dBm
• Gain: 26 dB
• Harmonic: -33dBc at 23dBm
(BT EDR version, under Vc&Vref=3.3V)
• LOW Current: 110mA at 18dBm
95mA at 16dBm
75mA at 14dBm
• Gain: 23dB
Pin Details
Functional Block Diagram
DFN - 8 pin, 2 x 2 (mm)
RF OUT8
PA 2
nd
stage bias control voltage.
The package ground provides
circuit ground as well as heat
dissipation path for the power
amplifier.
Center Metal
Package
Base
RF output. Require external
matching.
RF OUT7
V
REF2
6
PA 1
st
stage bias control voltage.V
REF1
5
No connection.NC4
Supply voltage for bias circuit. Vcc_Bias3
RF input.RF IN2
Supply voltage.Vcc1
DescriptionName
Pin
Number
Vcc
RF IN
Vcc_Bias
NC
RF OUT
RF OUT
V
REF2
V
REF1
Note: The different applications are based
on different outside circuit, please refer to
the Application Note for more details.
1
2
3
45
6
7
8
www.sz1999ic.com 0755-84133602
www.rfintc.com
RFIC Technology Corporation
AP1110
2.4~2.5 GHz Power Amplifier
AP1110
2of 10
For more information,please contact us at:
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
© 2006 RFIC Technology Corporation All rights reserved.
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
2008. 08. 29 Update
Electrical Characteristics: WLAN Applications
Under Vc=3.3V, Vref=2.8V, Ta=25ºC
Absolute Maximum Ratings
Important Note:
°C-40 to
+125
Storage Temperature
°C-40 to +85Operating Ambient
Temperature
dBm+5RF Input Power
mA280DC Supply Current For
Collector
V+5DC Power Supply For
Collector
UnitRatingParameter
EVM 3%
Pout=18dBm
Icq=21mA
Pout=18.5dBm
CONDITION
dBm18.5
Pout
Output power
%25
PAE
PAE
2
Output VSWR
1.5
Input VSWR
mA21
Icq
Quiescent current
dB26.5
Gp
Power Gain
mA0.5
Iref
Basic control reference
current
mA85
Icc
Total current
GHz2.52.4
f
Freq.
UNITMAX.TYP.MIN.SYMBOLPARAMETERS
The information provided in this datasheet is deemed
to be accurate and reliable only at present time.
RFIC Technology Corp. reserves the right to make
any changes to the specifications in this datasheet
without prior notice.
Note: For high power application, Vcc = Vbias = 4.5 V is what we recommend and please make an
advance contact with RFIC.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
And testing devices must be observed.
www.sz1999ic.com 0755-84133602
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