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**SST39VF400A 芯片详解** **一、产品概述** SST39VF400A是一款由Silicon Storage Technology公司生产的CMOS多用途闪存（MPF）芯片，属于SuperFlash系列。这款芯片组织结构为128K x16 / 256K x16 / 512K x16，采用先进的单电压读写操作，以提供高效能和高可靠性。 **二、工作电压与功耗** SST39VF400A支持2.7至3.6伏的工作电压，这使得它在写入（编程或擦除）操作时具有宽泛的电源适应性。同时，该芯片在运行时的电流消耗仅为20毫安（典型值），待机状态下电流仅为3微安（典型值），体现出低功耗的特点。 **三、可靠性与耐用性** SST39VF400A具有卓越的可靠性和耐用性，其耐久性达到10万次循环（典型值），数据保持时间超过100年。这意味着在正常使用的条件下，该芯片能够承受大量的写入和擦除操作而不影响其性能。 **四、读取与擦写速度** SST39VF400A的快速读取访问时间为45到90纳秒不等，具体取决于型号。它具备2KWord的扇区擦除能力和32KWord的块擦除能力，擦除速度较快，扇区擦除时间约18毫秒，块擦除时间同样为18毫秒，芯片擦除时间为70毫秒（典型值）。此外，单个字节的编程时间仅需14微秒，整个芯片的重写时间则为2到8秒，根据型号不同而异。 **五、自动写入时序** 该芯片拥有内部生成的VPP（编程电压），并配备有结束写入检测机制，如Toggle Bit和Data# Polling，以确保数据写入过程的精确控制。这些特性使得SST39VF400A在执行擦除和编程操作时更加智能化，减少了用户干预的需求。 **六、兼容性与封装** SST39VF400A遵循JEDEC标准，提供了与Flash EEPROM的引脚配置和命令集兼容性。它可提供48引脚TSOP（12mm x 20mm）和48球TFBGA（6mm x 8mm）两种封装选择，以满足不同应用场景的需求。 **七、应用领域** SST39VF400A适用于多种领域，包括嵌入式系统、数据存储、固件更新、工业控制以及消费电子设备等，其高效的读写速度和优秀的数据保留能力使其成为存储关键数据的理想选择。 SST39VF400A是一款高性能、低功耗、高可靠性的闪存芯片，其独特的技术特点和广泛的兼容性使其在现代电子设备中占据一席之地。无论是从功能设计还是从实际应用来看，SST39VF400A都是一款值得信赖的存储解决方案。

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S71117-04-000 6/01 360

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

• Organized as 128K x16 / 256K x16 / 512K x16

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF200A/400A/800A

– 2.7-3.6V for SST39VF200A/400A/800A

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical)

– Standby Current: 3 µA (typical)

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Fast Read Access Time

– 45 and 55 ns for SST39LF200A/400A

– 55 ns for SST39LF800A

– 70 and 90 ns for SST39VF200A/400A/800A

• Latched Address and Data

• Fast Erase and Word-Program

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39LF/VF200A

4 seconds (typical) for SST39LF/VF400A

8 seconds (typical) for SST39LF/VF800A

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

PRODUCT DESCRIPTION

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices are 128K x16 / 256K x16 / 512K x16 CMOS

Multi-Purpose Flash (MPF) manufactured with SST’s pro-

prietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39LF200A/400A/800A

write (Program or Erase) with a 3.0-3.6V power supply. The

SST39VF200A/400A/800A write (Program or Erase) with a

2.7-3.6V power supply. These devices conform to JEDEC

standard pinouts for x16 memories.

Featuring high performance Word-Program, the

SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices provide a typical Word-Program time of 14

µsec. The devices use Toggle Bit or Data# Polling to detect

the completion of the Program or Erase operation. To pro-

tect against inadvertent write, they have on-chip hardware

and software data protection schemes. Designed, manu-

factured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed endurance of

10,000 cycles. Data retention is rated at greater than 100

years.

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices are suited for applications that require conve-

nient and economical updating of program, configuration,

or data memory. For all system applications, they signifi-

cantly improve performance and reliability, while lowering

power consumption. They inherently use less energy dur-

ing Erase and Program than alternative flash technologies.

When programming a flash device, the total energy con-

sumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash technologies. These devices also improve flexibility

while lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet surface mount requirements, the SST39LF200A/

400A/800A and SST39VF200A/400A/800A are offered in

both 48-lead TSOP packages and 48-ball TFBGA pack-

ages. See Figures 1 and 2 for pinouts.

2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

SST39LF200A / SST39LF400A / SST39LF800A

SST39VF200A / SST39VF400A / SST39VF800A

SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories

Data Sheet

2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash

SST39LF200A / SST39LF400A / SST39LF800A

SST39VF200A / SST39VF400A / SST39VF800A

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

Read

The Read operation of the SST39LF200A/400A/800A and

SST39VF200A/400A/800A is controlled by CE# and OE#,

both have to be low for the system to obtain data from the

outputs. CE# is used for device selection. When CE# is

high, the chip is deselected and only standby power is con-

sumed. OE# is the output control and is used to gate data

from the output pins. The data bus is in high impedance

state when either CE# or OE# is high. Refer to the Read

cycle timing diagram for further details (Figure 3).

Word-Program Operation

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A are programmed on a word-by-word basis. Before

programming, one must ensure that the sector, in which

the word which is being programmed exists, is fully erased.

The Program operation consists of three steps. The first

step is the three-byte load sequence for Software Data Pro-

tection. The second step is to load word address and word

data. During the Word-Program operation, the addresses

are latched on the falling edge of either CE# or WE#,

whichever occurs last. The data is latched on the rising

edge of either CE# or WE#, whichever occurs first. The

third step is the internal Program operation which is initi-

ated after the rising edge of the fourth WE# or CE#, which-

ever occurs first. The Program operation, once initiated, will

be completed within 20 µs. See Figures 4 and 5 for WE#

and CE# controlled Program operation timing diagrams

and Figure 16 for flowcharts. During the Program opera-

tion, the only valid reads are Data# Polling and Toggle Bit.

During the internal Program operation, the host is free to

perform additional tasks. Any commands issued during the

internal Program operation are ignored.

Sector/Block-Erase Operation

The Sector- (or Block-) Erase operation allows the system

to erase the device on a sector-by-sector (or block-by-

block) basis. The SST39LF200A/400A/800A and

SST39VF200A/400A/800A offers both Sector-Erase and

Block-Erase mode. The sector architecture is based on

uniform sector size of 2 KWord. The Block-Erase mode is

based on uniform block size of 32 KWord. The Sector-

Erase operation is initiated by executing a six-byte com-

mand sequence with Sector-Erase command (30H) and

sector address (SA) in the last bus cycle. The Block-Erase

operation is initiated by executing a six-byte command

sequence with Block-Erase command (50H) and block

address (BA) in the last bus cycle. The sector or block

address is latched on the falling edge of the sixth WE#

pulse, while the command (30H or 50H) is latched on the

rising edge of the sixth WE# pulse. The internal Erase

operation begins after the sixth WE# pulse. The End-of-

Erase operation can be determined using either Data#

Polling or Toggle Bit methods. See Figures 9 and 10 for tim-

ing waveforms. Any commands issued during the Sector-

or Block-Erase operation are ignored.

Chip-Erase Operation

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A provide a Chip-Erase operation, which allows the

user to erase the entire memory array to the “1” state. This

is useful when the entire device must be quickly erased.

The Chip-Erase operation is initiated by executing a six-

byte command sequence with Chip-Erase command (10H)

at address 5555H in the last byte sequence. The Erase

operation begins with the rising edge of the sixth WE# or

CE#, whichever occurs first. During the Erase operation,

the only valid read is Toggle Bit or Data# Polling. See Table

4 for the command sequence, Figure 8 for timing diagram,

and Figure 19 for the flowchart. Any commands issued dur-

ing the Chip-Erase operation are ignored.

Write Operation Status Detection

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A provide two software means to detect the completion

of a write (Program or Erase) cycle, in order to optimize the

system write cycle time. The software detection includes

two status bits: Data# Polling (DQ

) and Toggle Bit (DQ

The End-of-Write detection mode is enabled after the rising

edge of WE#, which initiates the internal Program or Erase

operation.

The actual completion of the nonvolatile write is asynchro-

nous with the system; therefore, either a Data# Polling or

Toggle Bit read may be simultaneous with the completion

of the write cycle. If this occurs, the system may possibly

get an erroneous result, i.e., valid data may appear to con-

flict with either DQ

or DQ

. In order to prevent spurious

rejection, if an erroneous result occurs, the software routine

should include a loop to read the accessed location an

additional two (2) times. If both reads are valid, then the

device has completed the write cycle, otherwise the rejec-

tion is valid.

Data Sheet

2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash

SST39LF200A / SST39LF400A / SST39LF800A

SST39VF200A / SST39VF400A / SST39VF800A

Data# Polling (DQ

)

When the SST39LF200A/400A/800A and SST39VF200A/

400A/800A are in the internal Program operation, any

attempt to read DQ

will produce the complement of the

true data. Once the Program operation is completed, DQ

will produce true data. The device is then ready for the next

operation. During internal Erase operation, any attempt to

read DQ

will produce a ‘0’. Once the internal Erase opera-

tion is completed, DQ

will produce a ‘1’. The Data# Polling

is valid after the rising edge of fourth WE# (or CE#) pulse

for Program operation. For Sector-, Block- or Chip-Erase,

the Data# Polling is valid after the rising edge of sixth WE#

(or CE#) pulse. See Figure 6 for Data# Polling timing dia-

gram and Figure 17 for a flowchart.

Toggle Bit (DQ

)

During the internal Program or Erase operation, any con-

secutive attempts to read DQ

will produce alternating 1s

and 0s, i.e., toggling between 1 and 0. When the internal

Program or Erase operation is completed, the DQ

bit will

stop toggling. The device is then ready for the next opera-

tion. The Toggle Bit is valid after the rising edge of fourth

WE# (or CE#) pulse for Program operation. For Sector-,

Block- or Chip-Erase, the Toggle Bit is valid after the rising

edge of sixth WE# (or CE#) pulse. See Figure 7 for Toggle

Bit timing diagram and Figure 17 for a flowchart.

Data Protection

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A provide both hardware and software features to pro-

tect nonvolatile data from inadvertent writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less than 5

ns will not initiate a write cycle.

Power Up/Down Detection: The Write operation is

inhibited when V

is less than 1.5V.

Write Inhibit Mode

: Forcing OE# low, CE# high, or WE#

high will inhibit the Write operation. This prevents inadvert-

ent writes during power-up or power-down.

Software Data Protection (SDP)

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A provide the JEDEC approved Software Data Protec-

tion scheme for all data alteration operations, i.e., Program

and Erase. Any Program operation requires the inclusion of

the three-byte sequence. The three-byte load sequence is

used to initiate the Program operation, providing optimal

protection from inadvertent Write operations, e.g., during

the system power-up or power-down. Any Erase operation

requires the inclusion of six-byte sequence. This group of

devices are shipped with the Software Data Protection per-

manently enabled. See Table 4 for the specific software

command codes. During SDP command sequence, invalid

commands will abort the device to Read mode within TRC.

The contents of DQ

-DQ

can be V

or V

, but no other

value, during any SDP command sequence.

Common Flash Memory Interface (CFI)

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A also contain the CFI information to describe the char-

acteristics of the device. In order to enter the CFI Query

mode, the system must write three-byte sequence, same

as Software ID Entry command with 98H (CFI Query com-

mand) to address 5555H in the last byte sequence. Once

the device enters the CFI Query mode, the system can

read CFI data at the addresses given in Tables 5 through 9.

The system must write the CFI Exit command to return to

Read mode from the CFI Query mode.

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demo0222

2013-03-25

对我没多大作用
bravecaicai

2014-03-20

好用的东西啊，太感谢啦

JYoung_

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