KSI2306BDS-T1-GE3 SOT-23 A69T.pdf
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N-Channel 30-V(D-S) MOSFET
V(BR)DSS RDS(on)MAX ID
30 V
65mΩ@10V
4A
85mΩ@4.5V
FEATURE
APPLICATION
※ TrenchFET Power MOSFET ※ Load Switch for Portable Devices
※ DC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
Continuous Drain Current ID 4
APulsed Diode Curren IDM 20
Continuous Source-Drain Current(Diode Conduction) IS 0.72
Power Dissipation PD 0.75 W
Thermal Resistance from Junction to Ambient (t≤5s) RθJA 150 ℃/W
Operating Junction TJ 150
℃
Storage Temperature TSTG -55~+150
℃
1.GATE
2.SOURCE
3.DRAIN
1/4
KSI2306BDS-T1-GE3
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