SI2310-VB N沟道SOT23封装MOS管
SI2310-VB是一种N沟道SOT23封装MOS管,具有低导通电阻、高速开关速度和高电流承载能力。该器件适用于各种电子设备和系统,例如电池开关、DC/DC变换器等。
功能特点:
* Halogen-free According to IEC 61249-2-21
* TrenchFET ® Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested
应用:
* 电池开关
* DC/DC变换器
参数摘要:
* VDS (V):60
* RDS(on) (Ω):0.075 at VGS = 10 V
* ID (A):4
* Qg (Typ.):2.1 nC
* VGS (V):± 20
绝对最大额定值:
* Drain-Source Voltage VDS:60 V
* Gate-Source Voltage VGS:± 20 V
* Continuous Drain Current (TJ = 150 °C):4.0 A
* Pulsed Drain Current IDM:12 A
* Continuous Source-Drain Diode Current IS:1.39 A
* Avalanche Current L = 0.1 mH IAS:6 A
* Single-Pulse Avalanche Energy EAS:1.8 mJ
* Maximum Power Dissipation TC = 25 °C PD:1.66 W
*Maximum Junction-to-Ambient Thermal Resistance RthJA:115 °C/W
热设计参数:
* Maximum Junction Temperature TJ:150 °C
* Storage Temperature Range Tstg:-55 to 150 °C
* Maximum Junction-to-Foot (Drain) Steady State Thermal Resistance RthJF:60 °C/W
注意:
* Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
* Guaranteed by design, not subject to production testing.
SI2310-VB是一种高性能的N沟道MOS管,具有低导通电阻、高速开关速度和高电流承载能力,非常适合用于各种电子设备和系统中。