vsd090n10ms-VB是一种N沟道TO252封装MOS管
vsd090n10ms-VB MOSFET是一种N沟道TO252封装MOS管，主要应用于Primary Side Switch。该MOSFET具有高温junction temperature（175°C），PWM优化和100% Rg测试等特点。
一、主要特征：
* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC
二、应用领域：
* Primary Side Switch
三、电气特性：
* Static Drain-Source Breakdown Voltage：VDS = 100 V (VGS = 0 V, ID = 250 µA)
* Gate Threshold Voltage：VGS(th) = 2.5 V (VDS = VGS, ID = 250 µA)
* Gate-Body Leakage：IGSS = ± 100nA (VDS = 0 V, VGS = ± 20 V)
* Zero Gate Voltage Drain Current：IDSS = 1µA (VDS = 100 V, VGS = 0 V)
* Junction Temperature：TJ = 125 °C (VDS = 100 V, VGS = 0 V)
四、绝对最大Rating：
* Drain-Source Voltage：VDS = 100 V
* Gate-Source Voltage：VGS = ± 20 V
* Continuous Drain Current：ID = 13 A (TJ = 175 °C)
* Pulsed Drain Current：IDM = 40 A
* Continuous Source Current (Diode Conduction)：IS = 3 A
* Avalanche Current：IAS = 3 A
* Single Pulse Avalanche Energy：L = 0.1 mH, EAS = 18 mJ
* Maximum Power Dissipation：PD = 96 W (TC = 25 °C)
五、热阻抗Rating：
* Junction-to-Ambient：RthJA = 15°C/W
* Junction-to-Case (Drain)：RthJC = 0.85°C/W
六、温度Rating：
* Operating Junction and Storage Temperature Range：TJ = -55 to 175°C
* Storage Temperature Range：Tstg = -55 to 175°C
七、热设计注意：
* 请注意绝对最大Rating，避免设备损害。
* 请注意操作温度范围，避免设备损害。
八、结论：
vsd090n10ms-VB MOSFET是一种高性能的N沟道MOS管，适合用于Primary Side Switch等应用领域。其高温junction temperature、PWM优化和100% Rg测试等特点使其非常适合高频率、高电压的应用场景。
