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Hardware and Layout Design Considerations for DDR4 SDRAM.pdf
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Hardware and Layout Design Considerations for DDR4 SDRAM.pdf
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1 About this document
This document provides general hardware and layout
considerations and guidelines for hardware engineers
implementing a DDR4 memory subsystem.
The rules and recommendations in this document serve as an
initial baseline for board designers to begin their specific
implementations, such as fly-by memory topology.
NOTE
It is strongly recommended that the board
designer verifies that all aspects, such as
signal integrity, electrical timings, and so
on, are addressed by using simulation
models before board fabrication.
2
Recommended resources
The following documentation may provide additional,
important information:
• The DDR chapter of the applicable device reference
manual
• Micron’s website: http://www.micron.com
• JEDEC’s website: http://www.jedec.com (a good
example is DDR4 SDRAM Specification)
NXP Semiconductors
Document Number: AN5097
Application Note
Rev. 1, 07/2016
Hardware and Layout Design
Considerations for DDR4 SDRAM
Memory Interfaces
Contents
1 About this document.................................................1
2 Recommended resources.......................................... 1
3 DDR4 design checklist................... ..........................2
4 Selecting termination resistors......... ........................ 9
5 Avoiding VREF noise problems........ .......................9
6 Calculating VTT current.................. ........................ 9
7 Layout guidelines for DDR signal
groups..................................................... ................ 10
8 Using simulation models................. .......................15
9 Revision history...................................................... 16
A LS1088A DDR layout routing break
out........................................................................... 17
B DRAM reset signal considerations......................... 23
3 DDR4 design checklist
Table 1. DDR4 design checklist
No. Task Completed
Simulation
1 Ensure that optimal termination values, signal topology, and trace lengths are
determined through simulation for each signal group in the memory implementation.
The unique signal groups are as follows:
• Data group: MDQS(8:0), MDQS(8:0), MDM(8:0), MDQ(63:0), MECC(7:0)
NOTE:
In a x4 DRAM mode, the MDM(8:0) signals are no longer
available as mask signals but configured in a secondary
function as MDQS(17:9) signals. Therefore, the full Data
Group for a x4 DRAM mode: MDQS(17:0), MDQS(17:0),
MDQ(63:0), MECC(7:0)
• Address/CMD group: MBG(1:0) MBA(1:0), MA(13:0), MRAS/MA16, MCAS/
MA15, MWE/MA14, MACT
• Control group: MCS(3:0), MCKE(3:0), MODT(3:0), MAPAR_ERR,
MAPAR_OUT
• Clock group: MCK(3:0) and
MCK(3:0)
NOTE:
These groupings assume a full, 72-bit data implementation
(64-bit + 8 bits of ECC). For 32-bit DDR bus mode (32-bit +
8 bits of ECC), you may choose to have fewer MCK, MCK,
MCS, MCKE, and MODT signals.
2 Ensure to consider the following 3 points in read timing budget simulation:
• No Slew Rate Derating should be done for the FSL DDR4 controllers on reads.
• Timing budgets for reads can be done with customer's simulation tool by adding
the setup and hold margins rather than looking at the setup or hold margins by
themselves (to account for the DQS-DQ calibration).
• Read timing should be taken at Vref rather than Vin levels. (i.e. ALL read timing
measurements for DQ shall be taken at Vref. No read timing measurements are
taken at Vih(ac), Vil(ac), Vih(dc), or Vil(dc)).
Ensure the selected termination scheme meets the AC signaling parameters (voltage
levels, slew rate, and overshoot/undershoot) across all memory chips in the design.
Termination scheme
NOTE:
It is assumed that the designer is using the mainstream termination approach as found in JEDEC standards.
Specifically, it is assumed that on-die termination is used for the data groups and that external parallel resistors tied
to V
TT
are used for the address/CMD and control groups.
NOTE:
Different termination techniques may also prove valid and useful, but are left to the designer to validate through
simulation.
3 Ensure the worst-case power dissipation for the termination resistors are within the
manufacturer’s rating for the selected devices. See Selecting termination resistors.
4 Ensure the V
TT
resistors are properly placed by tying the R
T
terminators into the V
TT
island at the end of the memory bus.
5 Ensure the differential termination is present on the clock lines for discrete memory
populations, as shown in item 55 of this table.
NOTE:
The DIMM modules already contain this termination.
Table continues on the next page...
DDR4 design checklist
Hardware and Layout Design Considerations for DDR4 SDRAM Memory Interfaces, Rev. 1, 07/2016
2 NXP Semiconductors
Table 1. DDR4 design checklist (continued)
No. Task Completed
6 Ensure the worst-case current for the V
TT
plane is calculated based on the design
termination scheme. See Selecting termination resistors.
7 Ensure the V
TT
regulator can support the steady state and transient current needs of
the design.
8 Ensure the V
TT
island is properly decoupled with high frequency decoupling:
• Use at least one low ESL cap or two standard decoupling caps for each four-
pack resistor network (or every four discrete resistors).
• Use at least one 4.7 µF cap at each end of the V
TT
island.
NOTE:
This recommendation is based on a top-layer V
TT
surface island (lower
inductance). If an internal split is used, more capacitors may be needed to
handle the transient current demands.
9 Ensure the V
TT
island is properly decoupled with bulk decoupling. At least one bulk cap
(47–220 µF) capacitor should be at each end of the island.
10 Ensure the V
TT
island is placed at the end of the memory channel and as closely as
possible to the last memory bank.
Ensure the V
TT
regulator is placed in close proximity to the island.
11 Ensure a wide surface trace (~150 mils) is used for the V
TT
island trace.
V
REF
NOTE:
In DDR4, V
REF
is only used for address/command bus of DDR4 DRAM. Memory controller V
REF
is generated
internally.
12 Ensure that V
REF
is routed with appropriate trace width.
13 Ensure that V
REF
is isolated from noisy aggressors.
Maintain at least a 20–25 mils clearance from V
REF
to other traces; if possible, isolate
V
REF
with adjacent ground traces.
14 Ensure that V
REF
is properly decoupled by decoupling the source and each destination
pin with 0.1 µf caps.
15 Ensure the V
REF
source tracks variations in V
DD
, temperature, and noise, as required
by the JEDEC specification.
16 Ensure the V
REF
source supplies the minimal current required by the DDR4 DRAM.
17 For QorIQ products with DDR3L and DDR4 memory options, there is an external V
REF
pin available for DDR3L mode. When DDR4 mode is used the external V
REF
pin needs
to be grounded. For QorIQ products with DDR4 only option there is no external V
REF
pin.
18 If a resistor divider network is used to generate V
REF
, ensure that both resistors have
the same value and 1% tolerance.
GV
DD
, V
PP
power supplies
19 Ensure the V
PP
supply is ramped before or at the same time as GV
DD
supply.
Routing
20 The recommended routing order within the DDR4 interface is as follows:
• Data
• Address/command
• Control
• Clocks
• Power
Table continues on the next page...
DDR4 design checklist
Hardware and Layout Design Considerations for DDR4 SDRAM Memory Interfaces, Rev. 1, 07/2016
NXP Semiconductors 3
Table 1. DDR4 design checklist (continued)
No. Task Completed
NOTE:
The fly-by routing is recommended for address, command, control, and clock
signal bus.
21 Complete the following global routing items:
• Do not route any DDR4 signals over splits or voids.
• Ensure that traces routed near the edge of a reference plane maintain at least
30–40 mils gap to the edge of the reference plane.
• Allow no more than 1/2 of a trace width to be routed over via antipad.
22 Ensure the max lead-in trace length for data/address/command signals are no longer
than 7 inches.
Routing data bus
23 When routing the data lanes, route the outer-most (that is, the longest lane) first,
because this determines the amount of trace length to add on the inner data lanes.
24 Route all signals within a given byte lane on the same critical layer with the same via
count. Assuming ECC is used, the DDR4 data bus consists of nine data byte lanes.
NOTE:
The byte ordering below is not a requirement; byte lanes can be routed in the
order that best fits the customer design.
• Byte lane 0—MDQ(7:0), MDM(0), MDQS(0), MDQS(0)
• Byte lane 1—MDQ(15:8), MDM(1), MDQS(1), MDQS(1)
• Byte lane 2—MDQ(23:16), MDM(2), MDQS(2), MDQS(2)
• Byte lane 3—MDQ(31:24), MDM(3), MDQS(3), MDQS(3)
• Byte lane 4—MDQ(39:32), MDM(4), MDQS(4), MDQS(4)
• Byte lane 5—MDQ(47:40), MDM(5), MDQS(5), MDQS(5)
• Byte lane 6—MDQ(55:48), MDM(6), MDQS(6), MDQS(6)
• Byte lane 7—MDQ(63:56), MDM(7), MDQS(7), MDQS(7)
• Byte lane 8—MECC(7:0), MDM(8), MDQS(8), MDQS(8)
To facilitate fan-out of the DDR4 data lanes (if needed), alternate adjacent data lanes
onto different critical layers (see Figure 1 and Figure 2).
NOTE:
Some product implementations may only implement a 32-bit wide interface.
NOTE:
If the device supports ECC, NXP highly recommends that the user implements
ECC on the initial hardware prototypes.
25 Choose one of the following options to select the impedances and spacings for the
DDR4 data group.
Option #1 (wider traces—lower trace impedance):
• Single-ended impedance = 40 Ω. The lower impedance allows traces to be
slightly closer with less cross-talk.
• Utilize wider traces if stackup allows (7–8 mils).
• Spacing to other data signals = 1.5x to 2.0x
• Spacing to all other non-DDR signals = 4x
Option #2 (smaller traces—higher trace impedance):
• Single-ended impedance = 50 Ω
• Smaller trace widths (5–6 mils) can be used.
• Spacing between like signals should increase to 3x (for 5 mils) or 2.5x (for 6
mils), respectively.
26
Across all DDR4 data lanes:
• Ensure that all the data lanes are matched to within 2.0 inches.
27 Ensure bit and byte swapping rules are applied:
• Byte-swap is allowed in any order that would best fit the customer's design.
• No specific byte ordering is enforced or required.
Table continues on the next page...
DDR4 design checklist
Hardware and Layout Design Considerations for DDR4 SDRAM Memory Interfaces, Rev. 1, 07/2016
4 NXP Semiconductors
Table 1. DDR4 design checklist (continued)
No. Task Completed
• Bit-swap is only allowed within a nibble.
• Bit-swap across two nibbles is not allowed.
• Bit-swap across byte lanes is not allowed.
• For 32-bit or 16-bit DDR4 data bus, in the ECC byte lane only, the DQ[0], and
DQ[1] bit-swap is not allowed.
28 Ensure that each data lane properly is trace-matched to within 20 mils of its respective
differential data strobe.
• Ensure the trace matching for parts with operational data rates of higher than
1600 MT/s is within +/-5 mils.
29 When adding trace lengths to any of the DDR4 signal groups, ensure that there is at
least 25 mils between serpentine loops that are in parallel.
30 MDQS/MDQS considerations:
• Match all segment lengths between differential pairs along the entire length of the
pair. Trace match the MDQS/MDQS pair to be within +/-5 mils.
• Maintain constant line impedance along the routing path by maintaining the
required line width and trace separation for the given stackup.
• Avoid routing differential pairs adjacent to noisy signal lines or high-speed
switching devices such as clock chips.
• Differential impedance 75–95 Ω
• Differential impedance 90-95 Ω for parts with operational speeds of higher than
1600 MT/s
• Diff Gap = 4–5 mils (as DQS signals are not true differential, also known as
“pseudo differential”)
• Diff Gap = 5–8 mils, for parts with operational speeds of higher than 1600 MT/s.
Choose one of the following options to select the impedances and spacings for MDQS/
MDQS differential strobes.
Option #1 (wider traces—lower trace impedance):
• Single-ended impedance 40 Ω. The lower impedance allows traces to be slightly
closer with less cross-talk.
• Utilize wider traces if stackup allows (7–8 mils).
• Spacing to other data signals = 2x
• If not routed on the same layer as its associated data, then 4x spacing.
Option #2 (smaller traces—higher trace impedance):
• Single-ended impedance = 50 Ω
• Smaller trace widths (5–6 mils) can be used.
• Spacing between like signals (other data) should increase to 3x (for 5 mils) or
2.5x (for 6 mils), respectively.
• Do not divide the two halves of the diff pair between layers. Route the MDQS/
MDQS pair on the same critical layer as its associated data lane.
Routing address/command/control/clock bus
31 Ensure fly-by topology is used for address/command/control and clock groups. The
routing in fly-by topology should go from chip 0 to chip n and can be in the order that is
most convenient for the board design. The fly-by topology routing of address/command/
control and clock groups must end at the termination resistors that are after chip n.
Choose one of the following options to select the impedances and spacings for the
DDR4 address/command/control group.
Option #1 (wider traces—lower trace impedance):
• Single-ended impedance = 40 Ω. The lower impedance allows traces to be
slightly closer with less cross-talk.
• Utilize wider traces if stackup allows (7–8 mils).
Table continues on the next page...
DDR4 design checklist
Hardware and Layout Design Considerations for DDR4 SDRAM Memory Interfaces, Rev. 1, 07/2016
NXP Semiconductors 5
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