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S25FL512S
512 Mbit (64 Mbyte), 3.0 V SPI Flash Memory
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 001-98284 Rev. *Q Revised January 23, 2019
Features
CMOS 3.0 Volt Core with versatile I/O
Serial Peripheral Interface (SPI) with Multi-I/O
Density
❐ 512 Mbits (64 Mbytes)
SPI
❐ SPI Clock polarity and phase modes 0 and 3
❐ Double Data Rate (DDR) option
❐ Extended Addressing: 32-bit address
❐ Serial Command set and footprint compatible with
S25FL-A, S25FL-K, and S25FL-P SPI families
❐ Multi I/O Command set and footprint compatible with the
S25FL-P SPI family
READ Commands
❐ Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR
❐ AutoBoot - power up or reset and execute a Normal or Quad
read command automatically at a preselected address
❐ Common Flash Interface (CFI) data for configuration infor-
mation.
Programming (1.5 MBps)
❐ 512-byte Page Programming buffer
❐ Quad-Input Page Programming (QPP) for slow clock sys-
tems
❐ Automatic ECC -internal hardware Error Correction Code
generation with single bit error correction
Erase (0.5 to 0.65 MBps)
❐ Uniform 256-kbyte sectors
Cycling Endurance
❐ 100,000 Program-Erase Cycles, minimum
Data Retention
❐ 20-Year Data Retention, minimum
Security features
❐ OTP array of 1024 bytes
❐ Block Protection:
• Status Register bits to control protection against program
or erase of a contiguous range of sectors.
• Hardware and software control options
❐ Advanced Sector Protection (ASP)
• Individual sector protection controlled by boot code or
password
Cypress
®
65 nm MirrorBit
®
Technology with Eclipse
™
Architecture
Core supply voltage: 2.7 V to 3.6 V
I/O supply voltage: 1.65 V to 3.6 V
❐ SO16 and FBGA packages
Temperature range:
❐ Industrial (–40 °C to +85 °C)
❐ Industrial Plus (–40 °C to +105 °C)
❐ Automotive, AEC-Q100 Grade 3 (–40 °C to +85 °C)
❐ Automotive, AEC-Q100 Grade 2 (–40 °C to +105 °C)
❐ Automotive, AEC-Q100 Grade 1 (–40 °C to +125 °C)
Packages (all Pb-free)
❐ 16-pin SOIC (300 mil)
❐ 24-BGA (6 × 8 mm)
• 5 × 5 ball (FAB024) and 4 × 6 ball (FAC024) footprint
options
❐ Known Good Die and Known Tested Die
Logic Block Diagram
SRAM
MirrorBit Array
Control
Logic
Data Path
X Decoders
CS#
SCK
SI/IO0
SO/IO1
HOLD#/IO3
WP#/IO2
RESET#
I/O
Y Decoders
Data Latch
Document Number: 001-98284 Rev. *Q Page 2 of 145
S25FL512S
Performance Summary
Maximum Read Rates with the Same Core and I/O Voltage (V
IO
= V
CC
= 2.7 V to 3.6 V)
Command Clock Rate (MHz) MBps
Read 50 6.25
Fast Read 133 16.6
Dual Read 104 26
Quad Read 104 52
Maximum Read Rates with Lower I/O Voltage (V
IO
= 1.65 V to 2.7 V, V
CC
= 2.7 V to 3.6 V)
Command Clock Rate (MHz) MBps
Read 50 6.25
Fast Read 66 8.25
Dual Read 66 16.5
Quad Read 66 33
Maximum Read Rates DDR (V
IO
= V
CC
= 3 V to 3.6 V)
Command Clock Rate (MHz) MBps
Fast Read DDR 80 20
Dual Read DDR 80 40
Quad Read DDR 80 80
Typical Program and Erase Rates
Operation KBps
Page Programming (512-byte page buffer - Uniform Sector Option) 1500
256-KB Logical Sector Erase (Uniform Sector Option) 500
Current Consumption
Operation Clock Rate (MHz)
Serial Read 50 MHz 16 (max)
Serial Read 133 MHz 33 (max)
Quad Read 104 MHz 61 (max)
Program 100 (max)
Erase 100 (max)
Standby 0.07 (typ)
Document Number: 001-98284 Rev. *Q Page 3 of 145
S25FL512S
Contents
Features................................................................................. 1
Logic Block Diagram ............................................................ 1
Performance Summary ........................................................ 2
1. Overview ....................................................................... 4
1.1 General Description ....................................................... 4
1.2 Migration Notes.............................................................. 4
1.3 Glossary......................................................................... 7
1.4 Other Resources............................................................ 7
Hardware Interface
2. Signal Descriptions ..................................................... 8
2.1 Input/Output Summary................................................... 8
2.2 Address and Data Configuration.................................... 9
2.3 RESET# ......................................................................... 9
2.4 Serial Clock (SCK)......................................................... 9
2.5 Chip Select (CS#) .......................................................... 9
2.6 Serial Input (SI) / I/O0 .................................................. 10
2.7 Serial Output (SO) / I/O1.............................................. 10
2.8 Write Protect (WP#) / I/O2 ........................................... 10
2.9 Hold (HOLD#) / I/O3 .................................................... 10
2.10 Core Voltage Supply (V
CC
) .......................................... 11
2.11 Versatile I/O Power Supply (V
IO
) ................................. 11
2.12 Supply and Signal Ground (V
SS
) ................................. 11
2.13 Not Connected (NC) .................................................... 11
2.14 Reserved for Future Use (RFU)................................... 11
2.15 Do Not Use (DNU) ....................................................... 11
2.16 Block Diagrams............................................................ 12
3. Signal Protocols......................................................... 13
3.1 SPI Clock Modes ......................................................... 13
3.2 Command Protocol ...................................................... 14
3.3 Interface States............................................................ 17
3.4 Configuration Register Effects on the Interface ........... 22
3.5 Data Protection ............................................................ 22
4. Electrical Specifications............................................ 23
4.1 Absolute Maximum Ratings ......................................... 23
4.2 Thermal Resistance..................................................... 23
4.3 Operating Ranges........................................................ 23
4.4 Power-Up and Power-Down ........................................ 24
4.5 DC Characteristics....................................................... 26
5. Timing Specifications................................................ 27
5.1 Key to Switching Waveforms ....................................... 27
5.2 AC Test Conditions...................................................... 28
5.3 Reset............................................................................ 29
5.4 SDR AC Characteristics............................................... 31
5.5 DDR AC Characteristics .............................................. 35
6. Physical Interface ...................................................... 38
6.1 SOIC 16-Lead Package ............................................... 38
6.2 FAB024 24-Ball BGA Package .................................... 40
6.3 FAC024 24-Ball BGA Package.................................... 42
Software Interface
7. Address Space Maps................................................. 44
7.1 Overview....................................................................... 44
7.2 Flash Memory Array...................................................... 44
7.3 ID-CFI Address Space.................................................. 44
7.4 JEDEC JESD216 Serial Flash Discoverable Parameters
(SFDP) Space............................................................... 45
7.5 OTP Address Space ..................................................... 45
7.6 Registers....................................................................... 47
8. Data Protection ........................................................... 57
8.1 Secure Silicon Region (OTP)........................................ 57
8.2 Write Enable Command................................................ 57
8.3 Block Protection............................................................ 58
8.4 Advanced Sector Protection ......................................... 59
9. Commands .................................................................. 63
9.1 Command Set Summary............................................... 64
9.2 Identification Commands .............................................. 70
9.3 Register Access Commands......................................... 72
9.4 Read Memory Array Commands .................................. 81
9.5 Program Flash Array Commands ................................. 95
9.6 Erase Flash Array Commands...................................... 98
9.7 One Time Program Array Commands ........................ 102
9.8 Advanced Sector Protection Commands.................... 103
9.9 Reset Commands ....................................................... 108
9.10 Embedded Algorithm Performance Tables................. 109
10. Data Integrity ............................................................. 110
10.1 Erase Endurance ........................................................ 110
10.2 Data Retention............................................................ 110
11. Software Interface Reference .................................. 111
11.1 Command Summary................................................... 111
11.2 Serial Flash Discoverable Parameters (SFDP) Address
Map............................................................................. 113
11.3 Device ID and Common Flash Interface (ID-CFI) Address
Map............................................................................. 117
11.4 Registers..................................................................... 136
11.5 Initial Delivery State .................................................... 139
12 Ordering Information................................................ 140
13. Revision History........................................................ 142
Document History Page.................................................... 142
Sales, Solutions, and Legal Information ......................... 145
Worldwide Sales and Design Support.......................... 145
Products ....................................................................... 145
PSoC® Solutions ......................................................... 145
Cypress Developer Community.................................... 145
Technical Support ........................................................ 145
Document Number: 001-98284 Rev. *Q Page 4 of 145
S25FL512S
1. Overview
1.1 General Description
The Cypress S25FL512S device is a flash nonvolatile memory product using:
MirrorBit technology - that stores two data bits in each memory array transistor
Eclipse architecture - that dramatically improves program and erase performance
65 nm process lithography
This device connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single
I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple
width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands
for SIO, DIO, and QIO that transfer address and read data on both edges of the clock.
The Eclipse architecture features a Page Programming Buffer that allows up to 256 words (512 bytes) to be programmed in one
operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms.
Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates
supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface,
asynchronous, NOR flash memories while reducing signal count dramatically.
The S25FL512S product offers high densities coupled with the flexibility and fast performance required by a variety of embedded
applications. It is ideal for code shadowing, XIP, and data storage.
1.2 Migration Notes
1.2.1 Features Comparison
The S25FL512S device is command set and footprint compatible with prior generation FL-K and FL-P families.
Table 1. FL Generations Comparison
Parameter FL-K FL-P FL-S
Technology Node 90 nm 90 nm 65 nm
Architecture Floating Gate MirrorBit MirrorBit Eclipse
Release Date In Production In Production In Production
Density 4 Mb–128 Mb 32 Mb–256 Mb 512 Mb
Bus Width x1, x2, x4 x1, x2, x4 x1, x2, x4
Supply Voltage 2.7 V–3.6 V 2.7 V–3.6 V 2.7 V–3.6 V / 1.65 V–3.6 V V
IO
Normal Read Speed (SDR) 6 MBps (50 MHz) 5 MBps (40 MHz) 6 MBps (50 MHz)
Fast Read Speed (SDR) 13 MBps (104 MHz) 13 MBps (104 MHz) 17 MBps (133 MHz)
Dual Read Speed (SDR) 26 MBps (104 MHz) 20 MBps (80 MHz) 26 MBps (104 MHz)
Quad Read Speed (SDR) 52 MBps (104 MHz) 40 MBps (80 MHz) 52 MBps (104 MHz)
Fast Read Speed (DDR) – – 20 MBps (80 MHz)
Dual Read Speed (DDR) – – 40 MBps (80 MHz)
Quad Read Speed (DDR) – – 80 MBps (80 MHz)
Program Buffer Size 256B 256B 512B
Erase Sector Size 4 KB / 32 KB / 64 KB 64 KB / 256 KB 256 KB
Parameter Sector Size 4 KB 4 KB –
Sector Erase Time (typ.) 30 ms (4 KB), 150 ms (64 kB) 500 ms (64 kB) 520 ms (256 kB)
Page Programming Time (typ.) 700 µs (256B) 1500 µs (256B) 340 µs (512B)
Document Number: 001-98284 Rev. *Q Page 5 of 145
S25FL512S
Notes
1. 256B program page option only for 128-Mb and 256-Mb density FL-S devices.
2. FL-P column indicates FL129P MIO SPI device (for 128-Mb density).
3. 64 kB sector erase option only for 128-Mb/256-Mb density FL-P and FL-S devices.
4. FL-K family devices can erase 4-kB sectors in groups of 32 kB or 64 kB.
5. Refer to individual datasheets for further details.
1.2.2 Known Differences from Prior Generations
1.2.2.1 Error Reporting
Prior generation FL memories either do not have error status bits or do not set them if program or erase is attempted on a protected
sector. The FL-S family does have error reporting status bits for program and erase operations. These can be set when there is an
internal failure to program or erase or when there is an attempt to program or erase a protected sector. In either case the program or
erase operation did not complete as requested by the command.
1.2.2.2 Secure Silicon Region (OTP)
The size and format (address map) of the One Time Program area is different from prior generations. The method for protecting
each portion of the OTP area is different. For additional details see Secure Silicon Region (OTP) on page 57.
1.2.2.3 Configuration Register Freeze Bit
The configuration register Freeze bit CR1[0], locks the state of the Block Protection bits as in prior generations. In the FL-S family it
also locks the state of the configuration register TBPARM bit CR1[2], TBPROT bit CR1[5], and the Secure Silicon Region (OTP)
area.
1.2.2.4 Sector Erase Commands
The command for erasing an 8-kbyte area (two 4-kbyte sectors) is not supported.
The command for erasing a 4-kbyte sector is not supported in the 512-Mbit density FL-S device.
The erase command for 64-kbyte sectors is not supported in the 512-Mbit density FL-S device.
1.2.2.5 Deep Power-Down
The Deep Power Down (DPD) function is not supported in FL-S family devices.
The legacy DPD (B9h) command code is instead used to enable legacy SPI memory controllers, that can issue the former DPD
command, to access a new bank address register. The bank address register allows SPI memory controllers that do not support
more than 24 bits of address, the ability to provide higher order address bits for commands, as needed to access the larger address
space of the 512-Mbit density FL-S device. For additional information see Extended Address on page 44.
OTP 768B (3 x 256B) 506B 1024B
Advanced Sector Protection No No Yes
Auto Boot Mode No No Yes
Erase Suspend/Resume Yes No Yes
Program Suspend/Resume Yes No Yes
Operating Temperature –40 °C to +85 °C –40 °C to +85 °C / +105 °C –40 °C to +85 °C / +105 °C
Table 1. FL Generations Comparison (Continued)
Parameter FL-K FL-P FL-S
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