SDA09T集成电路IC电压低至2.5V
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2024-04-15
11:39:02
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Standard Product SD A09T is Pb-free
(meets ROHS & Sony 259 specifications). SD A09T
SD A09T L are electrically identical.
is a Green Product ordering option. SD A09T and
The SDA09T uses advanced trench technology to
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
65 90
85 125
R
θJL
43 60
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±12Gate-Source Voltage
Drain-Source Voltage 30
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
4.9
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
1.4
1
-55 to 150
T
A
=70°C
I
D
5.8
Features
V
DS
(V) = 30V
I
D
= 5.8 A (V
GS
= 10V)
R
DS(ON)
< 28mΩ (V
GS
= 10V)
R
DS(ON)
< 33mΩ (V
GS
= 4.5V)
R
DS(ON)
< 52mΩ (V
GS
= 2.5V)
General Description
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
G
D
S
S
G
D
TO-236
(SOT-23)
To
p
Vie
w
SHOUDING
SDA09 T
N-Channel Enhancement Mode Field Effect Transistor
www.shouding.net
1
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