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MT53E256M16D1.pdf

LPDDR4/LPDDR4X SDRAM,MT53E256M16D1, MT53E256M32D2,LPDDR4/LPDDR4X SDRAM MT53E256M16D1, MT53E256M32D2 Features This data sheet is for LPDDR4 and LPDDR4X unified product based on LPDDR4X information. Refer to LPDDR4 setting section LPDDR4 1.10V VDDQ at the end of this data sheet. • Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70–1.95V; 1.80V nominal – VDD2 = 1.06–1.17V; 1.10V nominal – VDDQ = 1.06–1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal • Frequency range – 1866–10 MHz (data rate range: 3733–20 Mbps/ pin) • 16n prefetch DDR architecture • 8 internal banks per channel for concurrent operation • Single-data-rate CMD/ADR entry • Bidirectional/differential data strobe per byte lane • Programmable READ and WRITE latencies (RL/WL) • Programmable and on-the-fly burst lengths (BL = 16, 32) • Directed per-bank refresh for concurrent bank operation and ease of command scheduling • Up to 8.5 GB/s per die • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Selectable output drive strength (DS) • Clock-stop capability • RoHS-compliant, “green” packaging • Programmable VSS (ODT) termination

MT53B256M32D1NP.pdf

Mobile LPDDR4 SDRAM,MT53B256M32D1, MT53B512M32D2, MT53B1024M32D4,Features • Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70–1.95V; 1.8V nominal – VDD2/VDDQ = 1.06–1.17V; 1.10V nominal • Frequency range – 1600–10 MHz (data rate range: 3200–20 Mb/s/ pin) • 16n prefetch DDR architecture • 2-channel partitioned architecture for low RD/WR energy and low average latency • 8 internal banks per channel for concurrent operation • Single-data-rate CMD/ADR entry • Bidirectional/differential data strobe per byte lane • Programmable READ and WRITE latencies (RL/WL) • Programmable and on-the-fly burst lengths (BL = 16, 32) • Directed per-bank refresh for concurrent bank operation and ease of command scheduling • Up to 12.8 GB/s per die (2 channels x 6.4 GB/s) • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Selectable output drive strength (DS) • Clock-stop capability • RoHS-compliant, “green” packaging • Programmable VSSQ (ODT) termination

RTL8153B-VB-CG_REALTEK.pdf

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IMX291LQR-C-Sony.pdf

IMX291LQR-C Image Sensor MIPI接口 datasheet The IMX291LQR-C is a diagonal 6.46 mm (Type 1/2.8) CMOS active pixel type solid-state image sensor with a square pixel array and 2.13 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V, and interface 1.8 V triple power supply, and has low power consumption. High sensitivity, low dark current and no smear are achieved through the adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variable charge-integration time. (Applications: Surveillance cameras, FA cameras, Industrial cameras)