STM32神舟IV号例程源码 20131227 5

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Supply voltage: V

, V

Storage temperature –55°C to 150°C

Junction temperature 150°C

Lead temperature (soldering) 260°C, 5 s

Package temperature (IR reflow, peak) 260°C

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating

conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

Supply voltage: V

, V

Analog input level (V

= 2.4 V) 1.4 Vp-p

Operating free-air temperature, T

–25 85 °C

2

System clock frequency 128f

, 192 f

, 256 f

, 384 f

Logic family CMOS compatible

V

Input logic level

V

0.3 V

V

I

= –2 mA 0.7 V

Output logic level

V

I

= 2 mA 0.3 V

Full-scale output voltage 0 dB 0.55 V

Dynamic range EIAJ, A-weighted 90 98 dB

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4

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