Type
BSZ16DN25NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Low on-resistance R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
10.9 A
T
C
=100 °C
7.7
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
44
Avalanche energy, single pulse
E
AS
I
D
=5.5 A, R
GS
=25 W
120 mJ
Reverse diode dv/dt dv /dt 10 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
62.5 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
1)
J-STD20 and JESD22
2)
see figure 3
V
DS
250
V
R
DS(on),max
165
mW
I
D
10.9
A
Product Summary
Type
Package
Marking
BSZ16DN25NS3 G
PG-TSDSON-8
16DN25N
PG-TSDSON-8
Rev. 2.2 page 1 2011-07-14
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