TI-TRS3221E.pdf

采用小型封装、具有 ±15kV IEC ESD 保护的

TRS3221E 3V 至 5.5V 单通道 RS-232 线路驱动器/接收器

1 特性

• 为 RS-232 引脚提供 ESD 保护

– ±15kV 人体放电模型 (HBM)

– ±8kV（IEC 61000-4-2，接触放电）

– ±15kV（IEC 61000-4-2，空气间隙放电）

• 符合或超出 TIA/EIA-232-F 和 ITU v.28 标准的要求

• 由 3V 至 5.5V V

电源供电

• 外部电容器：4 × 0.1μF

• 接受 5V 逻辑输入及 3.3V 电源

• 备选高速引脚兼容器件（1Mbit/s）

– TRSF3221E

• 自动断电功能可自动禁用驱动器以节省能耗

2 应用

• 电池供电手持式和便携式设备

• PDA 和掌上电脑

• 笔记本电脑、小型笔记本电脑

• 数码相机

要求并在异步通信控制器与串行端口连接器之间提供电

气接口。电荷泵和四个小型外部电容器支持由 3V 至

5.5V 单电源供电。这些器件以高达 250kbit/s 的数据信

号传输速率和最高为 30V/μs 的驱动器输出压摆率运

行。

串行端口处于非活动状态时，可提供灵活的电源管理控

制选项。当 FORCEON 为低电平且 FORCEOFF 为高

电平时，自动断电功能启用。在这种运行模式下，如果

器件在接收器输入中未感应到有效的 RS-232 信号，则

禁用驱动器输出。如果

器输入中是否存在 RS-232 信号。如果接收器输入电压

大于 2.7V 或小于 -2.7V，或者介于 -0.3V 至 0.3V 之间

有关接收器输入电平的信息，请参阅图 7-5。

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问

www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SLLS792

6 Specifications.................................................................. 4

6.1 Absolute Maximum Ratings........................................ 4

6.2 ESD Ratings............................................................... 4

6.3 ESD Ratings, IEC Specifications................................ 4

6.4 Recommended Operating Conditions.........................5

6.5 Thermal Information....................................................5

6.6 Electrical Characteristics.............................................5

6.7 Driver Section Electrical Characteristics..................... 6

6.8 Driver Section Switching Characteristics.................... 6

6.9 Receiver Section Electrical Characteristics................ 7

7 Parameter Measurement Information.......................... 10

8 Detailed Description......................................................13

8.1 Overview................................................................... 13

8.2 Functional Block Diagram......................................... 13

8.3 Feature Description...................................................13

8.4 Device Functional Modes..........................................14

9 Application Information Disclaimer............................. 15

9.1 Application Information............................................. 15

9.2 Typical Application.................................................... 15

9.3 Design Requirements............................................... 16

Information.................................................................... 18

注：以前版本的页码可能与当前版本的页码不同

Changes from Revision * (June 2007) to Revision A (December 2020) Page

• 添加了 ESD

、IEC

表、

部分、

部分、

部分以及

部分..........................................1

• 删除了

表.............................................................................................................................................. 1

• Added the RGT (VQFN-16) package pinout ......................................................................................................3

• Added data rate and t

rows for the RGT package in Driver Section Switching Characteristics table ..........6

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Copyright © 2021 Texas Instruments Incorporated

Product Folder Links: TRS3221E

Product Folder Links: TRS3221E

(2)

–0.3

6

V+ Positive output supply voltage range

(2)

–0.3

7

V

V–

Negative output supply voltage range

V

I

–0.3

6

V

O

Output voltage range

–13.2

13.2

V

V

+ 0.3

150

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating

conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltages are with respect to network GND.

VALUE

UNIT

V

Electrostatic discharge

±15000

Charged-device model (CDM), per

JEDEC specification JESD22-C101

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(1)

(1) For RGT package only: A minimum of 1-µF capacitor is required between VCC and GND to meet the specified IEC ESD level

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Copyright © 2021 Texas Instruments Incorporated

Product Folder Links: TRS3221E

MIN NOM MAX UNIT

Supply voltage

V

CC

= 3.3 V 3 3.3 3.6

V

V

= 5 V 4.5 5 5.5

CC

V

IL

Driver and control low-level input voltage DIN, FORCEOFF, FORCEON, EN 0.8 V

V

I

Driver and control input voltage DIN, FORCEOFF, FORCEON 0 5.5 V

V

I

Receiver input voltage

V

T

Operating free-air temperature

°C

THERMAL METRIC

TRS3221E

UNITDB (SSOP) PW (TSSOP) RGT (VQFN)

16 PINS 16 PINS 16 PINS

R

R

R

R

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

PARAMETER TEST CONDITIONS

(2)

MIN TYP

(1)

MAX UNIT

I

Input leakage current

±0.01 ±1

Auto-powerdown

disabled

V

CC

= 3.3 V or 5 V,

T

A

= 25°C

(1) All typical values are at V

CC

= 3.3 V or V

(2) Test conditions are C1–C4 = 0.1 μF at V

Product Folder Links: TRS3221E