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采用小型封装且具有 ±15kV IEC ESD 保护功能的 TRSF3221E 3V 至 5.5V
单通道 RS-232 1Mbit/s 线路驱动器和接收器
1 特性
• 为 RS-232 引脚提供 ESD 保护
– ±15kV 人体放电模型 (HBM)
– ±8kV IEC 61000-4-2 接触放电
– ±15kV IEC 61000-4-2 气隙放电
• 由 3V 至 5.5V V
CC
电源供电
• 速率高达 1Mbit/s
– 低速引脚兼容器件 (250kbit/s) – TRS3221E
• 采用近似于芯片级封装的 16 引脚 VQFN(RGT,
比 TSSOP 封装小 82%)
• 低待机电流:1μA(典型值)
• 外部电容器:4 × 0.1μF
• 接受 5V 逻辑输入及 3.3V 电源
• 自动断电功能可自动禁用驱动器以节省能耗
2 应用
• 工业 PC
• 有线网络
• 数据中心和企业级计算
• 电池供电型系统
• PDA
• 笔记本电脑
• 便携式计算机
• 掌上电脑
• 手持设备
3 说明
TRSF3221E 包含一个线路驱动器、一个线路接收器和
一个具有引脚对引脚(串行端口连接引脚,包括
GND)±15kV IEC ESD 保护功能的双电荷泵电路。
TRSF3221E 可在异步通信控制器和串行端口连接器之
间提供电气接口。电荷泵和四个小型外部电容器支持由
3V 至 5.5V 单电源供电。TRSF3221E 以高达 1Mbit/s
的数据信号传输速率运行,驱动器输出压摆率为 24V/
μs 至 150V/μs。
串行端口处于非活动状态时,可提供灵活的电源管理控
制选项。当 FORCEON 为低电平且 FORCEOFF 为高
电平时,自动断电功能启用。在这种运行模式下,如果
TRSF3221E 在接收器输入端未感应到有效的 RS-232
信号,则会禁用驱动器输出。如果 FORCEOFF 设定
为低电平且使能 (EN) 输入为高电平,则驱动器和接收
器均关闭,且电源电流降低至 1μA。断开串行端口的
连接或关闭外围驱动器会导致发生自动断电情况。当
FORCEON 和 FORCEOFF 均为高电平时可禁用自动
断电。启用自动断电的情况下,向接收器输入施加有效
信号时,器件会自动激活。INVALID 输出会通知用户
接收器输入端是否存在 RS-232 信号。如果接收器输入
电压大于 2.7V 或小于 -2.7V,或者介于 -0.3V 至 0.3V
之间的时间少于 30μs,则 INVALID 为高电平(有效
数据)。如果接收器输入电压在 –0.3V 至 0.3V 之间
的时间超过 30μs,则 INVALID 为低电平(无效数
据)。
有关接收器输入电平的信息,请参阅图 7-5。
器件信息
器件型号 封装
(1)
封装尺寸(标称值)
TRSF3221E
DB (SSOP) 6.20mm x 5.30mm
PW (TSSOP) 5.00mm x 4.40mm
RGT (VQFN) 3.00mm x 3.00mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
DIN
DOUT
Auto-powerdown
INVALID
RIN
FORCEOFF
FORCEON
ROUT
EN
11
16
9
13
10
8
1
12
逻辑图(正逻辑)
TRSF3221E
ZHCSO02B – JULY 2007 – REVISED JULY 2021
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLLS822

Table of Contents
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 ESD Ratings, IEC Specifications................................ 4
6.4 Recommended Operating Conditions.........................5
6.5 Thermal Resistance Characteristics........................... 5
6.6 Electrical Characteristics.............................................5
6.7 Electrical Characteristics, Driver................................. 6
6.8 Switching Characteristics, Driver................................ 6
6.9 Electrical Characteristics, Receiver............................ 7
6.10 Switching Characteristics, Receiver..........................7
6.11 Electrical Characteristics, Auto-Powerdown............. 8
6.12 Switching Characteristics, Auto-Powerdown............ 8
6.13 Typical Characteristics..............................................8
7 Parameter Measurement Information............................ 9
8 Detailed Description......................................................12
8.1 Overview................................................................... 12
8.2 Functional Block Diagram......................................... 12
8.3 Feature Description...................................................12
8.4 Device Functional Modes..........................................13
9 Application and Implementation.................................. 14
9.1 Application Information............................................. 14
10 Power Supply Recommendations..............................15
11 Layout........................................................................... 16
11.1 Layout Guidelines................................................... 16
11.2 Layout Example...................................................... 16
12 Device and Documentation Support..........................17
12.1 接收文档更新通知................................................... 17
12.2 支持资源..................................................................17
12.3 Trademarks.............................................................17
12.4 Electrostatic Discharge Caution..............................17
12.5 术语表..................................................................... 17
13 Mechanical, Packaging, and Orderable
Information.................................................................... 17
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision A (May 2021) to Revision B (July 2021) Page
• 更改了
应用
列表..................................................................................................................................................1
• Changed the table note for the ESD Ratings - IEC Specifications table to make it also applicable to PW
package.............................................................................................................................................................. 4
• Changed the thermal information for PW package.............................................................................................5
Changes from Revision * (August 2007) to Revision A (May 2021) Page
• 添加了“器件信息”表、“ESD 等级”表、“特性说明”部分、“器件功能模式”、“应用和实施”部分、
“电源相关建议”部分、“布局”部分、“器件和文档支持”部分以及“机械、封装和可订购信息”部分...... 1
TRSF3221E
ZHCSO02B – JULY 2007 – REVISED JULY 2021
www.ti.com.cn
2 Submit Document Feedback
Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: TRSF3221E

5 Pin Configuration and Functions
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C1+
V+
C1−
C2+
C2−
V−
EN
RIN
V
CC
FORCEOFF
GND
DOUT
FORCEON
DIN
INVALID
ROUT
DB or PW Package. 16 Pins (Top View)
Thermal Pad
1
2
3
4
5
12
11
10
9
6 7 8
16 15 14 13
EN
C1+
V+
C1-
FORCEON
DIN
INVALID
ROUT
C2+
C2-
V-
RIN
FORCEOFF
GND
V
CC
DOUT
RGT, VSON Package, 16 Pins (Top View)
表 5-1. Pin Functions
PIN
I/O
(1)
DESCRIPTION
NAME DB or PW RGT
EN 1 14 --
C1+ 2 16 - Positive lead of C1 capacitor
V+ 3 15 O Positive charge pump output for storage capacitor only
C1- 4 1 - Negative lead of C1 capacitor
C2+ 5 2 - Positive lead of C2 capacitor
C2- 6 3 - Negative lead of C2 capacitor
V- 7 4 O Negative charge pump output for storage capacitor only
RIN 8 5 I RS232 line data input (from remote RS232 system)
ROUT 9 6 O Logic data output (to UART)
INVALID 10 7
DIN 11 8 I Logic data input (from UART)
FORCEON 12 9
DOUT 13 10 O RS232 line data output (to remote RS232 system)
GRD 14 11 - Ground
V
CC
15 12 -
Supply Voltage, Connect to external 3-V to 5.5-V power
supply
FORCEOFF 16 13
Thermal Pad - Yes -
Exposed thermal pad. Can be connected to GND or left
floating.
(1) Signal Types: I = Input, O = Output, I/O = Input or Output.
www.ti.com.cn
TRSF3221E
ZHCSO02B – JULY 2007 – REVISED JULY 2021
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
3
Product Folder Links: TRSF3221E

6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)See
(1)
MIN MAX UNIT
V
CC
Supply voltage range
(2)
–0.3
6 V
V+
Positive output supply voltage range
(2)
–0.3
7 V
V–
Negative output supply voltage range
(2)
0.3
–7
V
V+ –
V–
Supply voltage difference
(2)
13 V
V
I
Input voltage range
Driver ( FORCEOFF, FORCEON, EN)
–0.3
6
V
Receiver
–25
25
V
O
Output voltage range
Driver
–13.2
13.2
V
Receiver ( INVALID)
–0.3
V
CC
+ 0.3
T
J
Operating virtual junction temperature 150 °C
T
stg
Storage temperature range
–65
150
°C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network GND.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±3000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 ESD Ratings, IEC Specifications
PIN NAME TEST CONDITIONS TYP UNIT
RIN, DOUT
HBM ±15
kVIEC 61000-4-2 Contact Discharge
(1)
±8
IEC 61000-4-2 Air-Gap Discharge
(1)
±15
(1) For the RGT and PW package only, a minimum of 1-µF capacitor is required between VCC and GND to meet the specified IEC-ESD
level.
TRSF3221E
ZHCSO02B – JULY 2007 – REVISED JULY 2021
www.ti.com.cn
4 Submit Document Feedback
Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: TRSF3221E

6.4 Recommended Operating Conditions
See 图 9-1 and
(1)
MIN NOM MAX UNIT
Supply voltage
V
CC
= 3.3 V 3 3.3 3.6
V
V
CC
= 5 V 4.5 5 5.5
V
IH
Driver and control
high-level input voltage
DIN, FORCEOFF, FORCEON, EN
V
CC
= 3.3 V 2
V
V
CC
= 5 V 2.4
V
IL
Driver and control
low-level input voltage
DIN, FORCEOFF, FORCEON, EN 0.8 V
V
I
Driver and control input voltage DIN, FORCEOFF, FORCEON 0 5.5 V
V
I
Receiver input voltage
–25
25 V
T
A
Operating free-air temperature
TRSF3221EI
–40
85
°C
TRSF3221EC 0 70
(1) Test conditions are C1–C4 = 0.1 μF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at V
CC
= 5 V ± 0.5 V.
6.5 Thermal Resistance Characteristics
THERMAL METRIC
(1)
TRSF3221E
UNITDB (SSOP) PW (TSSOP) RGT (VQFN)
16 Pins 16 Pins 16 Pins
R
θJA
Junction-to-ambient thermal resistance
82 110.9 58.8 °C/W
R
θJC(top)
Junction-to-case (top) thermal
resistance
45.7 41.7 55.8 °C/W
R
θJB
Junction-to-board thermal resistance 44.4 57.2 23.8 °C/W
ψ
JT
Junction-to-top characterization
parameter
11.0 4.2 1.7 °C/W
ψ
JB
Junction-to-board characterization
parameter
43.8 56.6 23.7 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal
resistance
N/A N/A 9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application
report.
6.6 Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(see 图 9-1)
PARAMETER TEST CONDITIONS
(1)
MIN TYP
(2)
MAX UNIT
I
I
Input leakage current FORCEOFF, FORCEON, EN ±0.01 ±1
μA
I
CC
Supply current
(T
A
= 25°C)
Auto-powerdown disabled
No load,
FORCEOFF and FORCEON at V
CC
0.3 1 mA
Powered off No load, FORCEOFF at GND 1 10
μA
Auto-powerdown enabled
No load, FORCEOFF at V
CC
,
FORCEON at GND,
All RIN are open or grounded
1 10
(1) Test conditions are C1–C4 = 0.1 μF at V
CC
= 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at V
CC
= 5 V ± 0.5 V.
(2) All typical values are at V
CC
= 3.3 V or V
CC
= 5 V, and T
A
= 25°C.
www.ti.com.cn
TRSF3221E
ZHCSO02B – JULY 2007 – REVISED JULY 2021
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
5
Product Folder Links: TRSF3221E
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