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TI-CC1190.pdf
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TI-CC1190.pdf
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LNA_OUT
PA_IN
PA_OUT
HGM
BIAS
PA_EN
LNA_EN
PREAMP
ENEN
LNA
EN
LOGIC
BIAS
LNA_IN
VDD_PA1VDD_LNA
TR_SW
PA
VDD_PA2
CC1190
www.ti.com
SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
850 – 950 MHz RF Front End
Check for Samples: CC1190
1
FEATURES
APPLICATIONS
• 850 - 950 MHz ISM Bands Wireless Systems
• Seamless Interface to Sub-1 GHz Low Power
RF Devices from Texas Instruments
• Wireless Sensor Networks
• Wireless Industrial Systems
• Up to 27 dBm (0.5 W) Output Power
• IEEE 802.15.4 Systems
• 6 dB Typical Sensitivity Improvement with
• Wireless Consumer Systems
CC11xx and CC430
• Wireless Metering (AMR/AMI) Systems
• Few External Components
• Smart Grid Wireless Networks
– Integrated PA
– Integrated LNA
DESCRIPTION
– Integrated Switches
CC1190 is a cost-effective and high-performance RF
– Integrated Matching Network
Front End for low-power and low-voltage wireless
– Integrated Inductors
applications at 850 - 950 MHz.
• Digital Control of LNA and PA Gain by HGM
CC1190 is a range extender for the sub-1 GHz
Pin
low-power RF transceivers, transmitters, and
• 50-nA in Power Down (LNA_EN = PA_EN = 0)
System-on-Chip devices from Texas Instruments.
• High Transmit Power Efficiency
CC1190 integrates a power amplifier (PA), a
– PAE = 50% at 26 dBm Output Power
low-noise amplifier (LNA), switches, and RF matching
for the design of a high-performance wireless
• Low Receive Current Consumption
systems.
– 3 mA for High Gain Mode
CC1190 increases the link budget by providing a
– 26 µA for Low Gain Mode
power amplifier for increased output power, and an
• 2.9 dB LNA Noise Figure, Including Switch and
LNA with low noise figure for improved receiver
External Antenna Match
sensitivity.
• RoHS Compliant 4-mm × 4-mm QFN-16
CC1190 provides an efficient and easy-to-use range
Package
extender in a compact 4-mm × 4-mm QFN-16
• 2 V to 3.7 V Operation
package.
CC1190 BLOCK DIAGRAM
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
CC1190
SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
DEVICE TEMPERATURE PACKAGE
(1)
TRANSPORTION MEDIA
CC1190RGVR Tape and Reel, 2500
-40°C to 85°C QFN (RVG) 16
CC1190RGVT Tape and Reel, 250
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values
may cause permanent damage to the device.
VALUE UNIT
Supply voltage, V
DD
All supply pins must have the same voltage –0.3 to 3.8 V
Voltage on any digital pin –0.3 to VDD + 0.3, max 3.8 V
Input RF level 10 dBm
Storage temperature range –50 to 150 °C
Human-body model, non RF pins 2000 V
Human-body model, RF pins: PA_IN, PA_OUT, TR_SW,
ESD 1500 V
LNA_IN, LNA_OUT
Charged device model 1000 V
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
Ambient temperature range –40 85 °C
Operating supply voltage 2 3.7 V
Operating frequency range 850 950 MHz
ELECTRICAL CHARACTERISTICS
T
C
= 25°C, VDD = 3 V, f
RF
= 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external
matching components optimized for 915 MHz operation.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
P
IN
= -40 dBm, HGM = 1 3 mA
Receive current
P
IN
= -40 dBm, HGM = 0 26 µA
P
IN
= 5 dBm, POUT = 26.5 dBm, HGM = 1 302
Transmit current No input signal, HGM = 1 56 mA
No input signal, HGM = 0 29
Power down current LNA_EN = PA_EN = 0 50 200 nA
High input level (control pins) HGM, LNA_EN, PA_EN 1.3 VDD V
Low input level (control pins) HGM, LNA_EN, PA_EN 0.3 V
Power down → Receive mode, switching
300 ns
time
Power down → Transmit mode, switching
600 ns
time
2 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s) :CC1190
CC1190
www.ti.com
SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
ELECTRICAL CHARACTERISTICS (continued)
T
C
= 25°C, VDD = 3 V, f
RF
= 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external
matching components optimized for 915 MHz operation.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RF Receive
P
IN
= -40 dBm, HGM = 1 11.6
Gain dB
P
IN
= -40 dBm, HGM = 0 -6
Gain variation over frequency 850–950 MHz, P
IN
= -40 dBm, HGM = 1 1.2 dB
Gain variation over power supply 2 – 3.7 V, P
IN
= -40 dBm, HGM = 1 1 dB
HGM = 1, including internal switch and external
2.9 dB
antenna match
Noise figure
HGM = 0, including internal switch and external
6.2 dBm
antenna match
HGM = 1 -12.3
Input 1 dB compression dBm
HGM = 0 11.2
Input IP3, High Gain Mode HGM = 1 -5 dBm
Input reflection coefficient, S11, High HGM = 1, measured at antenna port, depends
-11.5 dB
Gain Mode on external antenna and LNA match
RF Transmit
P
IN
= -20 dBm, HGM = 1 27.9
Gain dB
P
IN
= -20 dBm, HGM = 0 24.6
Maximum Output Power P
IN
= 5 dBm, HGM = 1, VDD = 3.7 V 27.7 dBm
P
IN
= 5 dBm, HGM = 1 26.5
Output power, POUT P
IN
= 0 dBm, HGM = 1 25.5 dBm
P
IN
= -6 dBm, HGM = 1 22
Power Added Efficiency, PAE P
IN
= 5 dBm, HGM = 1 48%
HGM = 1 24
Output 1 dB compression dBm
HGM = 0 23.7
Output power variation over frequency 850 – 950 MHz, PIN = 5 dBm, HGM = 1 1.7 dB
Output power variation over power supply 2 V – 3.7 V, PIN = 5 dBm, HGM = 1 4.5 dB
Output power variation over temperature -40°C – 85°C, PIN = 5 dBm, HGM = 1 1 dB
2nd harmonic power HGM = 1, PIN = 5 dBm 2.5
See application note AN001 (SWRA090) for dBm
3rd harmonic power -37
regulatory requirements.
HGM = 1, measured at SMA connector on
Input reflection coefficient, S11 -10 dB
PA_IN/LNA_OUT (TX active)
Copyright © 2009–2010, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s) :CC1190
GND
PA_IN
LNA_OUT
GND
LNA_IN
HGM
LNA_EN
PA_EN
GND
PA_OUT
GND
TR_SW
VDD_PA2
BIAS
VDD_LNA
1
2
3
4
12
11
10
9
5 6 7 8
16 15 14 13
4x4QFN-16
VDD_PA1
CC1190
SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
www.ti.com
DEVICE INFORMATION
QFN-16 PACKAGE
TOP VIEW
NOTE
The exposed die attach pad must be connected to a solid ground plane as this is the
primary ground connection for the chip. Inductance in vias to the pad should be
minimized. Following the CC1190EM reference layout is recommended. Changes will alter
the performance. Also see the PCB land pattern information in this data sheet.
PIN FUNCTIONS
PIN
I/O DESCRIPTION
NO. NAME
The exposed die attach pad must be connected to a solid ground plane. See CC1190EM
- GND Ground
(SWRR064) reference design for recommended layout.
1 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer.
2 PA_OUT RF Output of PA.
3 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer.
4 TR_SW RF RXTX switch pin.
5 LAN_IN RF Input of LNA.
Digital control pin.
6 HGM Digital Input HGM = 1 → Device in High Gain Mode.
HGM = 0 → Device in Low Gain Mode.
7 LNA_EN Digital Input Digital control pin. See Table 2 and Table 3 for details.
8 PA_EN Digital Input Digital control pin. See Table 2 and Table 3 for details.
9 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer.
10 LNA_OUT RF Output of LNA.
11 PA_IN RF Input of PA.
12 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer.
13 VDD_LNA Power 2 – 3.7 V Supply Voltage.
14 BIAS Analog Biasing input. Resistor between this node and ground sets bias current.
15 VDD_PA2 Power 2 – 3.7 V Supply Voltage.
16 VDD_PA1 Power 2 – 3.7 V Supply Voltage.
4 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s) :CC1190
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