TI-TSU8111.pdf资源-CSDN文库

ISET Curent Setting in Register 22h (mA)

Actual LDO Output Current (mA)

0 100 200 300 400 500 600 700 800 900 1000

0

100

200

300

400

500

600

700

800

900

1000

D001

-40°C

25°C

85°C

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

TSU8111

ZHCSAE4A –SEPTEMBER 2012–REVISED AUGUST 2014

TSU8111 具具有有单单节节充充电电器器的的双双路路 SP2T USB 2.0 高高速速开开关关

1 特特性性 2 应应用用范范围围

1

• 双单刀双掷 (SP2T) USB 2.0 高速开关

• 移动电话

• 上网本/笔记本电脑

– UART 路径支持 UART 或 USB 2.0 高速信号

• 台式机

• 集成单节充电器

• 便携式手持设备

– 集成低压降线性稳压器 (LDO)

– 充电电压稳压精度 1%

3 说说明明

– 充电电流精度 8%

TSU8111是一款具有集成线性充电器的双 SP2T 微型

– 针对壁式适配器的高达 950mA 的可编程充电电

USB 开关。由于此器件集成有充电器，因此无需配备

流限制

外部充电器 IC，从而节省了成本与电路板空间。该器

• 充电器检测符合 USB 电池充电规范 v1.1 (BCv1.1)

件可通过 USB 端口或专用充电器供电运行，并支持高

– VBUS 检测

达 950mA 的充电电流。连接该器件后，将通过 VBAT

– 数据接触侦测

或 VBUS 为其供电。 TSU8111 可检测与 BCv1.1 标

– 主和副侦测

准兼容的充电器以及使用 ID 电阻的附件。 USB 开关

– 支持 USB 充电器（DCP、CDP、SDP）

矩阵既可以通过自动检测来控制，也可以通过 I

2

C 手动

• 可在 ID 引脚上进行 5 位附件检测

进行控制。

– 按附件类型自动切换

• I

2

C 接口

器器件件信信息息

(1)

– 手动切换功能

部部件件号号封封装装封封装装尺尺寸寸（（标标称称值值））

– 连接和断开时产生中断

TSU8111 DSBGA (20) 2.14mm x 1.76mm

– 支持制造中使用的控制信号（JIG，BOOT）

(1) 如需了解所有可用封装，请参见数据表末尾的可订购产品附

录。

• 具有过压保护功能的 VBUS 引脚的容差为 28V

• 针对输出电流控制的热调节和热关断保护

整整个个器器件件温温度度范范围围内内的的实实际际快快速速充充电电电电流流与与寄寄存存器器电电阻阻

• JESD 22 ESD 性能

设设置置间间的的关关系系

– 12kV 人体模型

(VBUS/DP_CON/DM_CON/ID_CON)

– 2kV 人体模型（所有其他引脚）

• IEC ESD 性能

– ±4kV 接触放电 (IEC 61000-4-

2)（VBUS/DP_CON/DM_CON/ID_CON 接地

(GND)）

• 浪涌保护（VBUS/DP_CON/DM_CON/ID_CON 接

地）

– 无需使用外部元件即可保护 USB 连接器引脚

1

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

English Data Sheet: SCDS335

TSU8111

ZHCSAE4A –SEPTEMBER 2012–REVISED AUGUST 2014

www.ti.com.cn

目目录录

7.3 Feature Description................................................. 10

1 特特性性.......................................................................... 1

7.4 Device Functional Modes........................................ 11

2 应应用用范范围围................................................................... 1

7.5 Programming .......................................................... 12

3 说说明明.......................................................................... 1

7.6 Register Map........................................................... 16

4 修修订订历历史史记记录录 ........................................................... 2

8 Application and Implementation ........................ 25

5 Pin Configuration and Functions......................... 3

8.1 Application Information............................................ 25

6 Specifications......................................................... 4

8.2 Typical Application ................................................. 25

6.1 Absolute Maximum Ratings ...................................... 4

9 Power Supply Recommendations...................... 26

6.2 Handling Ratings ...................................................... 4

10 Layout................................................................... 27

6.3 Recommended Operating Conditions....................... 5

10.1 Layout Guidelines ................................................. 27

6.4 Thermal Information.................................................. 5

10.2 Layout Example .................................................... 27

6.5 Electrical Characteristics........................................... 5

11 器器件件和和文文档档支支持持 ..................................................... 28

6.6 Timing Requirements ............................................... 8

11.1 Trademarks........................................................... 28

6.7 Switching Characteristics.......................................... 8

11.2 Electrostatic Discharge Caution............................ 28

6.8 Typical Characteristics.............................................. 8

11.3 术语表 ................................................................... 28

7 Detailed Description.............................................. 9

12 机机械械封封装装和和可可订订购购信信息息 .......................................... 28

7.1 Overview ................................................................... 9

7.2 Functional Block Diagram ......................................... 9

4 修修订订历历史史记记录录

Changes from Original (September 2012) to Revision A Page

• 已更改本数据表至最新的 SDS 格式并替换了所有文本、表格和图。 ................................................................................... 1

TSU8111

www.ti.com.cn

ZHCSAE4A –SEPTEMBER 2012–REVISED AUGUST 2014

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN MAX UNIT

V

BAT

3 4.4

Supply voltage V

BUS

4 6.5 V

V

DDIO

1.65 3.6

Input-output terminal voltage, V

IO

V

DM_CON

, V

DP_CON

, V

ID_CON

, V

DP_HT

, V

DM_HT

, V

RxD

, V

TxD

0 3.6 V

ID pin capacitance C

ID

1

nF

LDO output capacitance C

LDO

1

Operating free-air temperature T

A

–40 85 °C

6.4 Thermal Information

TSU8111

THERMAL METRIC

(1)

YFP UNIT

20 PINS

R

θJA

Junction-to-ambient thermal resistance 70.3

R

θJC(top)

Junction-to-case (top) thermal resistance 0.4

R

θJB

Junction-to-board thermal resistance 10.4 °C/W

ψ

JT

Junction-to-top characterization parameter 1.8

ψ

JB

Junction-to-board characterization parameter 10.4

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

V

BAT

= 3 V to 4.4 V, V

DDIO

= 2.8 V, T

A

= –40°C to 85° C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

USB and UART PATHS

(1)

R

ON

On-state resistance V

I

= 0 V to 3.6 V, I

O

= –2 mA, V

BAT

= 3.6 V 8 Ω

On-state resistance match

ΔR

ON

V

I

= 0.4 V, I

O

= –2 mA, V

BAT

= 3.6 V 0.5 Ω

between channels

R

ON(flat)

On-state resistance flatness V

I

= 0 V to 3.6 V, I

O

= –2 mA, V

BAT

= 3.6 V 0.7 Ω

V

I

= 0.3 V, V

O

= 2.7 V or V

I

= 2.7 V, V

O

= 0.3

I

IO(OFF)

Off-state leakage current 45 nA

V, V

BAT

= 4.4 V, Switch off

V

I

= OPEN, V

O

= 0.3 V or 2.7 V, V

BA

T = 4.4 V,

I

IO(ON)

On-state leakage current 50 nA

Switch on

C

I(OFF)

Off-state capacitance at input DC bias = 0 V or 3.6 V, f = 10 MHz, Switch off 4 pF

C

O(OFF)

Off-state capacitance at output DC bias = 0 V or 3.6 V, f = 10 MHz, Switch off 7.5 pF

C

I(ON)

On-state capacitance at input DC bias = 0 V or 3.6 V, f = 10 MHz, Switch off 8.6 pF

C

O(ON)

On-state capacitance at output DC bias = 0 V or 3.6 V, f = 10 MHz, Switch off 8.6 pF

BW Bandwidth R

L

= 50 Ω, Switch on 820 MHz

O

ISO

Off isolation f = 240 MHz, R

L

= 50 Ω, Switch off -36 dB

X

TALK

Crosstalk f = 240 MHZ, R

L

= 50 Ω -35 dB

LINEAR CHARGER

(2)

Rising 250

Charger input voltage OK

V

CHG(OK)

V

BUS

– V

BAT

mV

threshold

Falling 45

I

2

C register 22h [7:6] = 00 6

I

2

C register 22h [7:6] = 01 6.5

VBUS over-voltage protection

V

BUS(OVP)

V

(default 7.5 V)

I

2

C register 22h [7:6] = 10 7

I

2

C register 22h [7:6] = 11 7.5

(1) V

O

is equal to the asserted voltage on DP_CON and DM_CON. V

I

is equal to the asserted voltage on DP_HT and DM_HT pins. I

O

is

equal to the current out of the DP_CON and DM_CON pins. I

I

is equal to the current into the DP_HT and DM_HT pins.

(2) Fast charging current will fall below listed values when junction temperature rises above 85°C due to thermal regulation circuitry.

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