DN05112/D
May 2018, Rev. 0 www.onsemi.com 1
Design Note – DN05112/D
AR0143 Image Sensor with Power &
Clocking Reference Design
Device
Application
Output
Voltage
Output
Current
Dropout
Voltage
Package
NCV8163 Image Sensor 2.8 V 250 mA 80 mV WLCSP
Other Specifications
• Fully integrated image sensor module with power and clocking solution
• Image sensor performance impervious to system design
• 9.5mmx9.5mm image sensor section
• Automotive AEC−Q100 Qualification
Introduction
Complementary metal-oxide semiconductor (CMOS) imaging sensors are the most commonly
used type of image sensors actually. One of the great advantages of CMOS sensors over charged
coupled devices (CCDs) is the very high level of product integration, such as the possibility to
include the timing logic, image digitalization and processing plus capture control on a miniature
single chip. This reduces system power, cost, and size without much compromise in performance.
On the other side, CMOS imaging sensors are sensitive to noise, which can be electromagnetic
interference (EMI), substrate noise coupling, thermal noise and power supply ripple. First three
effects can be significantly reduced by proper circuit and PCB design. We will focus on power
supply ripple only in this design note.
Voltage ripple present on digital supply rails usually does not cause any significant impact to
image quality, while ripple is inside required and specified limits. On the other side, ripple present
on analog supply rail is directly proportional to image quality and can cause several types of image
distortion, including image noise, banding, etc.
In this design note we want to focus on AR0143 image sensor, which use three voltage supply
rails: 2.8V for analog circuits, 1.8V for digital I/O circuits and 1.2 V for digital core and image
processing. The sensor is used in ON Semiconductor MARS reference design which is described
below.
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