论文研究-Modeling and Characterization of On-Chip Interconnects.pdf

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片上互连建模及其特性分析,尹文言,赵文生,文中首先介绍了片上单个互连的分布式电路模型,所有集总元件均可通过几何和物理参数得到。由于未涉及到优化调谐,保证了模型参数
山国武技论文在丝 del Symbols: Q3D 1 =1000 um w(um)t(um)max error w(um)t(um)max error △151 74% 2 4.4 40 96%5021.1% 3102 75 2.3 152 04% 。 2w5w20w20 Frequency(GHz) Signal Line G 山国武技论文在统 y v() ) 兀(+ ) 十 山国武技论文在丝 () √-(+/) 27 um Wa=27 um 125um 125 um SIO2 Si 足 Probe-tip-planes 2 Symmetric plane Reference plane parasItIcs para sitEs parasitics Device i! Under Test () Symmetric plane Reference plane 山国武花论文在丝 The proposed model g Momentum Momentum 2 100 Symbols: Measured data Symbols: Measured data =6pm,=800 W=10m,=900pm -8 oW3=10m,F=90m 0102030405060708090100110 0102030405060/08090100110 Frequency (GHz) Frequency(GHz) 10 full m1 shield shield full mi shie d ILIn ▲poly- SI PGs orthogenal PGs 0.1 Frequency(GHz) 错误!未找到引用源 山国武技论文在丝 R-r) LAf 0X1 SiOn Si:(f) Gg1(F) Csi2(f) Gsia(t) 山国武技论文在丝 500 W=2 um, W2=1 um, s=2 um hx-3 um, hsi=300 um 400 830 8 t=1 um 200 口 Weisshaar et a 100 凡1 斤1 Frequency(GHz) ()(") + 8 E 0.0 Wy-4 um We-1 um, t-1 um Gc=1C S/m Osi=1C0 S!m 0.2 8=4pm _0.4 0.6 Frequency (GHz) 山国武技论文在丝 16 s-4 um 724=1m,W=1m,t=1pm f20 GHz ho22 um, hs=5C0 um 10 8 W 0.1 0.1 100 100010000 Sican Conductivity(s/m) 山国武技论文在丝 Ground 015m Coupled Interconnects Ground

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