安森美半导体ESD保护器件SL05T1-D 数据手册pdf,安森美半导体ESD保护器件SL05T1-D 数据手册
SL05T1 Series ELECTRICAL CHARACTERISTICS Breakdown Voltage Vc, Clamping Voltage (Note 4) (Note 5 Capacitance Device VRWM IR Q VRWM VBR@ 1 mA (Volts @1A @5A IPP VR=0V, 1 MHz(pF) Device Marking ( V) (uA) Min Max Typ ax SL05 50 6.0 8.0 98 SL12 L12 12 10 13.3 155 19 24 12 3.5 5.0 SL15 L15 15 1.0 16.7 185 2 30 10 3.5 50 SL24 L24 1.0 4 55 50 50 4. VBR measured at pulse test current of 1 mA at an ambient temperature of 25C 5. Surge current waveform per Figure 2 TYPICAL CHARACTERISTICS 10 100 PEAK VALUE IRSM @8 us PULSE WIDTH (tp)IS dEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY =8 us 60 HALF VALUE IRSM/2 20 us 40 0.1 30 tp 10 0.01 0 0 10 100 1000 40 60 PULSE WIDTH (us) t, TIME (us) Figure 1. Maximum Peak Power Rating Figure 2. 8 x 20 us Pulse Waveform 10 SL05T1 SLO5 15 SL15 山 0.1 SL24 05 0.01 ZERO BIAS 50%VRWM VRWM 55 150 TEMPERATURE C) Figure 3. Typical Junction Capacitance Figure 4. Typical Leakage Over Temperature http:/onsemi.com SL05T1 Series Applications Background This new family of tvs devices (SLOSTI series)are designed to protect sensitive electronics such as communications systems, computers, and computer peripherals against damage due to ESD conditions or transient voltage conditions. Because of their low capacitance value(less than 5 PF), they can be used in high speed Iyo data lines. Low capacitance is achieved by integrating a compensating diode in series with the Tvs Figure 6 which is basically based in the below theoretical principle An alternative solution to protect unidirectional lines, is to Capacitance in parallel: CT= C1+C2+.+Cn connect a fast switching steering diode in parallel with the Capacitance in series: 1/CT=(1/C1)+(1/C2)+.+(1/ Cn) SLOSTI series device. When the steering diode is The Figure 5 shows the integrated solution of the slo5T1 forward-biased the Tvs will avalanche and conduct in series device reverse direction. It is important to note that by adding a steering diode, the effective capacitance in the circuit will be increased, therefore the impact of adding a steering diode COMPENSATING TVS must be taken in consideration to establish whether the DIODE incremental capacitance will affect the circuit functionality or not. The Figure 7 shows the con the Figure 5. steering diode and the slostl series device: In the case that an over-voltage condition occurs in the yo line protected by the slo5tl series device, the Tvs is SL05T1 DEVICE reversed-biased while the compensation diode is forward-biased so the resulting current due to the transient voltage is drained to ground If protection in both polarities is required. an additional STEERING DIODE device is connected in inverse-parallel with reference to the first one, the Figure 6 illustrates the inverse-parallel Figure 7. connection for bi-directional or unidirectional lines Another typical application in which the slo5t1 series device can be utilized, is to protect multiple io lines The protection in each of the lo lines is achieved by connecting two devices in inverse-parallel. The Figure 8 illustrates how multiple i o line protection is achieved Fiqure 8 For optimizing the protection, it is recommended to use ground planes and short path lengths to minimize the PCb's ground inductance http:/onsemi.com SL05T1 Series PACKAGE DIMENSIONS soT-23(To236) CASE 318-08 ISSUE AN NOTES 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD SEE VIEW C FINISH THICKNESS MINIMUM LEAD HICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL 4.318-01 THRU-07 AND-09 OBSOLETE, NEW STANDARD 318-08 E MILLIMETERS INCHES DIM MIN N MIN NOM MAX 0.040 0010060.100c010.0020004 0.25 b0.37044050001500180020 0.00 80 040.11 0.120 1,20130140Cc4700510055 0.075 0.10 020030cc0400080012 L10.350.540.69C.010.02 H STYLE 26 FIN 1. CATHODE VIEW C 2. ANODE SOLDERING FOOTPRINT 0.95 0.95 0.037 0.037 2.0 0.079 0.9 0.035 SCALE 10: 1 0.031 For additional information on our Pb-Free strategy and soldering details, please download the oN Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D ON Semiconductor and (N are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability rising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitaticn special, consequential or incidental damages Typica"parameters which may be provided in SCiLLC data sheets anc/cr specifications can and do vary in different applications and actual performance may vary over time. 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