一种基于MEMS技术的压力传感器芯片设计.pdf

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硅压力传感器是利用半导体硅的压阻效应制成, 其品质的优劣主要决定于敏感结构的设计与制作工艺. 文章从硅压力传感器敏感薄膜的选择、敏感电阻条的确定以及敏感电阻位置的选取, 设计了一种方案并进行了实验验证, 得出所设计的压力传感器精度达到0. 1%~ 0. 25% F. S.
L=[(5K/32709口)-2×0.5-4×0.5],能用宽度大约在60m左右,弹性膜片可应用区 10m=155.185pmn 具体尺寸如图6所小 压敏条宽10um 重参杂区宽30pm 30 ILm 间隙宽5um 此宽 敏感电阻条长54un 图3开环设计 图5力敏电阻条设计 4敏感薄膜上敏感电阻条位置的确定 边长156468761m 边长2000m 腰边长900m 900×2.5%22.5um 4.1基本参数 本设计中采用O50mm(6in)×750μm,N型 900×6%9%54-81μm (00面晶片,力敏电阻条在<10><10>晶|50m 向4:8掺杂,力敏电阻条的位置示意图如图4所 模型具体参数如下:硅基底尺寸为20001-m×2 000n×400mn,敏感膜片具体尺寸为900μm×900 具体应用尺寸 604m 2176′ pm×30n IIo 图6弹性膜片可应用区具体尺寸 压敏电阻条设计成如图7所示的形状,压敏电 2 阻条分布和开环设计如图8所示 振动膜边长900m R 图4力敏电阻条的位置示意图 离开振动膜 边5um 4.2方形膜片应变规律及力敏电阻在敏感膜片上 的位置确定 根据有限元分析可知,对于方形膜片应变最大 位置在靠近膜片外边缘的中间处,因此应将压敏电 图7压敏电阻条位置示意图 阻布置在该处,在<11><110>方向上由于存在 正负应变,可使惠斯顿电桥输出达到最大值”7.结 合木设计实例,由公式(1)可知,当L1>62,W2> 3W1时 △R/R≈0.96(△R/R)理论 根据经验,电阻条边离开膜边的最大距离也不 应超过膜边长的6%~9%,当电阻条中心离廾膜边 的距离最好为膜边长的2.5%时灵敏度相对较 大.依据以上条件实际电阻条的折数我们取3折 力敏电阻条设计如图5所示(此设计中间隙宽度可 根据线间距和光刻套刻精度进行调整).压敏电阻条 图8压敏电阻条分布和开环设计 的放置氾围在离芯片外边550μm~604m的范围 o1994-2011ChinaAcademicJournalElectronicPublishingHouse.Allrightsreservedhttp://wwi.cnKi.net 5结束语 微型敏感元件并组装成传感器,实验表明该设计方 案工艺简单,灵敏度高,准确度可达0.1%~0.25% 将上述设计方案在某集成电路研究所的生产线FS,为合理设计、应用徼型硅压力传感器提供了一种 上流片,试制了压力传感器芯片获得微机械加工的参考依据 参考文献 [1]孙以材,刘玉岭,孟庆浩.压力传感器的设计制造与应用[M].北京:冶金工业出版社,200 2赵艳平,丁建宁,杨继昌王等.硅压力传感器芯片设计分析与优化设计[ J]. MEMS器件与技术,200,(9):43844 3]李伟东,吴学忠,李圣怡.一种压阻式微压力传感器[J.仪表技术与传感器,2006,(7):1~5 4][美]徐泰然著,王晓浩等译.MEMS和微系统设计与制造[Ⅵ.北京:机械工业出版社.2004 [5]倪智琪,姚素英,张生才.SOI单晶硅压力传感器模拟计算与优化设讦J.传感技术学报,2)03.(1:92~95 6]沈桂芬,付世,丁德宏.硅压力传感器非线性分析与伊化设计[J.传感技术学报2003,(1:39-43 [7]刘君华.智能传感器系统M].丙安:西安电子科技出版社,199 [8]吴志军.一种硅基顶发射有机发光器件[J.吉林师范大学学报(自然科学版),2008,008,293):60~62 1 9 French. P. J. and Ev anc, A. G, R.. Piezores istence in Single Crystel and Ploy Crystalline Si. See in Propert ies of Silicon, INSPEC, 1998.94-104 [ 10] By zek,j, Paerson, K M allon, Jr: et c Silicon sensors and M irostructrures, Lucas NovaSensors Froment, California, 1991 Design of Silicon Piezoresistive Pressure Sensor ChipBased on MEMS Technclogy WANG Da-jun, Ll Huaijiang College of Physics and Flectmnic Inform ation, Huaibei Normal Universiy, Huaibei 2350m, China) Abstract: Silicon pressure sensor is made based on the piezoresistance effect of semiconductor. The advantages and short coming of the sensor is determined by the design and the workmanship of sensing structure The choice of an elas- tic diaphragm and the optimal key location of the sensing resistor is discussed in the case. The dimension of the sensing resistor is determined. A scheme is eperimental validat ion and the pressure transducer accuracy of sensor has reached to0.10%-0.25%F.S. Key words: piezoresistive pressure sensor; sensing res istor, chip design (上接第132页) Experimental Study and Geometrical Analysis on the Aiming Point of Free Throws WANG Erequan (I. Phy sical Education, Science School of harbin Normal L niersity, Harbin 150080, China 2.P.E. Dept of Nort heast Agriculure University, Harbin 150030, Chna Abstract: Twelve basketball players of Harbin Normal University are chosen as the research ob jects. SMI iView X HED Eye Tracker is used to track the aiming points of the players, and we find that the aiming points are mainly located in the front edge of the basket and some points over the basket Then the height scope of aiming point and the distance betweenplayers eyes and the aiming point are calculated by physical and geometry methods Key words: basketball; free throw; aiming point; exper imental st o3542011ChinaAcademicJournalElectronicPublishingHouse.Allrightsreservedhttp://www.cnki.net

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