非晶硅顶电池中的n型掺杂层对非晶硅微晶硅叠层太阳电池性能的影响.pdf

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摘要:采用超高频等离子增强化学气相沉积技术,逐次高速沉积非晶硅顶电池及微晶硅底电池,形成 pin/pin型非晶硅/微晶硅叠层电池
1550 半导体学报 第29卷 0.8 0.7 n-layer: 3nm a-Si: II 23nmμcSi:H 1.2 s04 Red n- laver:26nmμc-si:H Blue E0.8 =1. 67mA/cm 0.1 FF=60 40050060070080090010001100 Wavelength/nm 0.2 40.60.81.01.2 0.8 0.7 0.6 n-layer: 6nm a-Si: H 20nmμe-Si:H 0.5 Red 14"…………….… 1.2 04 1.0 n-laver: 6nm a-Si: II ---- Blue 20nmμc-Si:H Dark 0.2 §0.6 0.4 J9=1.1mcm2 40050060070080090010001100 FF-63% Wavelength/nm 00.2040.60. 1.01.2 图5在ia-Si:H)n(cSi:H)之间加入不同厚度的非晶n层得到的叠 八 层电池QE曲线(a)隧穿结采用3nm的非晶础n层和23nm的微晶硅n 层;(b)穿结采用6nm的非晶硅n昃和20nm的微晶硅n昃 图7通过红色滤光片测得的非晶硅/微晶硅叠层电池的JV特性由线 rig.5 Quantum efficiency of an a-Si/!rc- Si tandem cell with(a)隧穿结用26m撒晶硅n层;(b)隧穿结来用6mm非品硅n层和 20nm徵品硅n层 3nm a-Si: H n-layer and 23nm uc-Si: H n-laycr in the trj(a) Fig 7 J-V curve of an a-Si/uc-Si tandem cell with 26nm uc-Si: and 6nm a-Si: H n-laycr and 20nm uc-Si: H n-laycr in the TrJ H n-layer in the TRJ (a) and 6nm a-Si: H n-layer and 20nm uc Si: H n-layer in the trj(b) 4结论 的引入有效地降低了顶电池漏电现象,并在非晶n层厚 度为6nm时,頂电池漏电现象消失,而该叠层电池的开 对一般的非晶硅/微晶硅叠层电池进行光谱响应测路电压和填充因子都有不同程度的提高. 试发现,叠层电池中的顶电池存在漏电现象.针对该问 上述结果表明,暗态QE曲线偏离正常的三角形会 题,作者提出在非晶硅顶电泡的(a-Si:H)/n(rc-Si:H)使叠层电池性能降低;而对于消除顶电池漏电的有效方 中引人非晶n保护层的方法.实验结果表明,非晶n层法是在i(a-si:H)n(pcSi:H)中引入非晶n保护层 参考文献 [1 Bergmann R B Werner J H. The future of crystalline silicon films on foreign substrates. Thin Solid Films. 2002. 403/404: 162 [2 Meier J, Dubail S, Fluckiger R, et al. Intrinsic microcrystalline sili n-laycr: 26nm uc-Si: H . con(uc-Si: H)- a promising new thin film solar cell material Proc lst WCPEC, Hawaii, 1994: 409 n-layer: 6nm a-SI: H L 3J Meier J, Dubail S, Cuperus J,et al. Recent progress in micromorpl solar cells. J Non-Cryst Solids, 1998, 227230: 1250 H [4] Xue Junming, Mai Yaohua. Zhao Ying, et al. Investigation on a- Si/ uc-Si tandem solar cell. Acta Energiae Solaris Sinica, 2005, 26 0.20.40.60.81.01.21.4 (2):166( in chinese)薛俊明,麦耀华,赵颖,等.溥膜非晶硅/微 品硅叠层太阳电池的研究.太阳能学报,2005,26(2):166 [5 Loffler J Gordijn A. Stolk R L, et al. Amorphous and 'micromor 图6顶电池采用不同n型掺杂层的电池J-V曲线 ph'silicon tandem cells with high open-circuit voltage. Solar En- Fig 6 1g v curves of tandem solar cells with different n layers ergy Materials Solar Cells, 2005.87: 251 第8期 啡晓艳等:丰晶砫顶电池中的n型掺杂层对非晶硅/微晶硅叠层太阳电池性能的影响 155 Efrect of n Doped Layers in an Amorphous Silicon Top Solar Cell on the Performance of " Micromorph"Tandem Solar Cells Han Xiaoyan,Li Guijun, Hou Guofu, Zhang Xiaodan, Zhang Dckun, Chen Xinliang Wei Changchun, Sun Jian, Xue Junming, Zhang Jianjun Zhao Ying, and geng Xinhua ( Key laboratory of photoelectronics Thin Film Devices and Technique of Tianjin, Key laboratory of Optoelectronic Information Science and Technology of the Ministry of Education, Institute of Photoelectronics Thin Film Devices and Technique, Nankai University, Tianjin 300071, China Abstract: Pin, pinmicromorph'tandcm solar cclls wcrc deposited by vcry high frcqucncy plasma enhanced chcmical vapor deposi tion(VHF-PECVD). ' Tunnel recombination junctions of the" micromorph tandem solar cells consisting of two microcrystalline doped layers with a defect rich interface were developed. While the solar cells performed reasonably well under AM 1. 5 lights,we found through spectral response measurements that the first deposited cell of the tandem structures was leaking under low light condi lions. The insertion of a thin protection layer of ll-ty pe amorphous silicon is presented in this paper. The results shown that the intro- duced n-type amorphous silicon could improve the leakage phenomenon. The leakage phenomenon disappeared when the thick ness of the n-type amorphous silicon was 6nm, leading to an increase in open-circuit voltage. The open-circuit voltage increased trom 1. 27 to 1.33v and Ff increased from 60% to 63% Key words: very high frequency plasma enhanced chemical vapor deposition; Ilicromorph'"la ndem solar cell; 1/p lunnel recom bi nation unction PACC:8115II;8630J;7360F Article d:0253-4177(2008)08-1548-04 t Project supported by the State Key Development Program for Basic Research of China(NoS 2006CB202602,2006CB202603), the National Natural Science foundation of China(No 60506003)and the Matching Program for National Science and Technology Plan (No O7OTPTJC29500) F Corresponding author. Email: hxy2006(@ mail. nankai. edu.Cl Received 31 January 2008, revised manuscript received 25 March 2008 c2008 Chinese Institute of Electronics

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