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《Explanation of DS Parameters》.pdf
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《Explanation of DS Parameters》-Infineon-2002.04.pdf
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Explanation, V1.0, Apr. 2002
Power Management & Supply
Never stop thinking.
Explanation of
Data Sheet
Parameters
Edition 2002-04
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2002.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com.
CoolMOS
TM
, EmCon
TM
, CoolSET
TM
are a trademarks of Infineon Technologies AG.
Erläuterung der Datenblattwerte
Explanation of Data Sheet Parameters
Revision History: 2002-04 V1.0
Previous Version:
Page Subjects (major changes since last revision)
Document’s layout has been changed: 2002-Sep.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
mcdocu.comments@infineon.com
Erläuterung der Datenblattwerte
Explanation of Data Sheet Parameters
Explanation 3 V1.0, 2002-04
Inhalt Seite Contents Page
1 Symbole, Begriffe, Normen . . . 7
1.1 Anordnung des Indizes . . . . . . . 13
2 Grenzwerte . . . . . . . . . . . . . . . 15
2.1 Kollektor-Emitter-Spannung
V
CE
15
2.2 Kollektor-Gate-Spannung
V
CGR
15
2.3 Drain-Source-Spannung
V
DS
. . 15
2.4 Kollektor-Gleichstrom
I
C
. . . . . 15
2.5 Drain-Gleichstrom
I
D
. . . . . . . . 16
2.6 Kollektor-Strom, gepulst
I
Cpuls
. . 16
2.7 Drain-Strom, gepulst
I
Dpuls
. . . . 16
2.8 Gate-Emitter-Spannung
V
GE
. . 16
2.9 Gate-Source-Spannung
V
GS
. . 16
2.10 Inverse-Dioden
Spannungsanstieg d
v/dt . . . . . . 17
2.11 Maximale Verlustleistung
P
tot
. . 17
2.12 Betriebstemperaturbereich
T
J
. . 17
2.13 Lagertemperaturbereich
T
stg
. . . 17
2.14 Avalanche-Energie,
Einzelpuls
E
AS
. . . . . . . . . . . . . 17
2.15 Avalanche-Energie im
Dauerbetrieb
E
AR
. . . . . . . . . . . 17
2.16 Avalanche Drainstrom im
Dauerbetrieb
I
AR
. . . . . . . . . . . 18
2.17 Feuchteklasse . . . . . . . . . . . . . 18
2.18 Prüfklasse . . . . . . . . . . . . . . . . . 18
3 Kennwerte . . . . . . . . . . . . . . . . 19
3.1 Kollektor-Emitter-
Durchbruchspannung
V
(BR)CES
. 19
3.2 Drain-Source-
Durchbruchspannung
V
(BR)DSS
. 19
3.3 Gate-Schwellenspannung
(Einsatzspannung) . . . . . . . . . . 19
3.4 Kollektor-Reststrom
I
CES
. . . . . 19
3.5 Drain-Reststrom
I
DSS
. . . . . . . . 20
3.6 Gate-Emitter-Leckstrom
I
GES
. . 21
3.7 Gate-Source-Leckstrom
I
GSS
. . 21
3.8 Drain-Source-
Einschaltwiderstand
R
DS(on)
. . . 21
1 Symbols, Terms, Standards . . . 7
1.1 Arrangement of Subscripts . . . . 13
2 Maximum Ratings . . . . . . . . . . 15
2.1 Collector-Emitter Voltage
V
CE
. . 15
2.2 Collector-Gate Voltage
V
CGR
. . . 15
2.3 Drain-Source Voltage
V
DS
. . . . 15
2.4 DC Collector Current
I
C
. . . . . . 15
2.5 DC Drain Current
I
D
. . . . . . . . . 16
2.6 Collector Current, pulsed
I
Cpuls
. 16
2.7 Drain Current, pulsed
I
Dpuls
. . . 16
2.8 Gate-Emitter Voltage
V
GE
. . . . . 16
2.9 Gate-Source Voltage
V
GS
. . . . . 16
2.10 Reverse Diode
Voltage Rise d
v/dt . . . . . . . . . . 17
2.11 Maximum Power Dissipation
P
tot
. 17
2.12 Operating Temperature Range
T
J
17
2.13 Storage Temperature Range
T
stg
. 17
2.14 Avalanche Energy,
Single Pulse
E
AS
. . . . . . . . . . . . 17
2.15 Avalanche Energy in
Continuous Operation
E
AR
. . . . 17
2.16 Avalanche Drain Current in
Continuous Operation
I
AR
. . . . 18
2.17 Humidity Class . . . . . . . . . . . . . 18
2.18 Test Class . . . . . . . . . . . . . . . . . 18
3 Characteristics . . . . . . . . . . . . 19
3.1 Collector-Emitter
Breakdown Voltage
V
(BR)CES
. . . 19
3.2 Drain-Source
Breakdown Voltage
V
(BR)DSS
. . . 19
3.3 Gate Threshold Voltage . . . . . . 19
3.4 Collector Cutoff Current
I
CES
. . 19
3.5 Drain Cutoff Current
I
DSS
. . . . . 20
3.6 Gate-Emitter Leakage Current
I
GES
. 21
3.7 Gate-Source Leakage Current
I
GSS
. 21
3.8 Drain-Source
On Resistance
R
DS(on)
. . . . . . . 21
Erläuterung der Datenblattwerte
Explanation of Data Sheet Parameters
Explanation 4 V1.0, 2002-04
Inhalt Seite Contents Page
3.9 Übertragungssteilheit
g
fs
. . . . . 21
3.10 Eingangskapazität
C
iss
. . . . . . . 21
3.11 Ausgangskapazität
C
oss
. . . . . . 22
3.12 Rückwirkkapazität
C
rss
. . . . . . . 22
3.13 Einschaltzeit
t
on
= t
d(on)
+ t
r
. . . . 22
3.14 Ausschaltzeit
t
off
= t
d(off)
+ t
f
. . . 22
3.15 Inversdioden Gleichstrom
I
S
. . 24
3.16 Inversdioden Gleichstrom,
gepulst
I
SM
. . . . . . . . . . . . . . . . 24
3.17 Durchlassspannung
V
SD
. . . . . 24
3.18 Gate Ladung
Q
G
. . . . . . . . . . . 24
3.19 Gate-Source Ladung
Q
GS
. . . . 24
3.20 Gate-Drain Ladung
Q
GD
. . . . . . 24
3.21 Sperrverzögerungszeit
t
rr
und
Sperrverzögerungsladung
Q
rr
. . 25
3.22 Thermische Kapazität
C
th1
. . . . 25
3.23 Thermische Widerstand
R
th1
. . 25
3.24 Wärmewiderstand
Chip-Gehäuse
R
thJC
oder
Chip-Umgebung
R
thJA
. . . . . . . . 25
3.25 Interner Gate Widerstand
R
G
. . 25
3.26 Maximale Steilheit
der Rückstromspitze d
i
rr
/dt . . . 25
3.27 Effektive Ausgangkapazität,
Energiebezogen
C
o(er)
. . . . . . . 26
3.28 Effektive Ausgangkapazität,
Zeitbezogen
C
o(tr)
. . . . . . . . . . . 26
3.29 Miller Plateau Spannung am
Gate
V
plateau
. . . . . . . . . . . . . . . 27
3.30 Drain-Source-Avalanche
Durchbruchspannung
V
(BR)DS
. 27
3.31 Maximale
Löttemperatur
T
sold
. . . . . . . . . . 27
4 Diagramme . . . . . . . . . . . . . . . 28
4.1 Verlustleistung
P
tot
= f (T) . . . . 28
4.2 Typische Ausgangscharakteristik . . 28
4.3 Zulässiger Betriebsbereich . . . . 28
4.4 Typische Übertragungscharakteristik 29
3.9 Transconductance g
fs
. . . . . . . . 21
3.10 Input Capacitance
C
iss
. . . . . . . 21
3.11 Output Capacitance
C
oss
. . . . . 22
3.12 Reverse Transfer Capacitance
C
rss
. 22
3.13 Turn-On Time t
on
= t
d(on)
+ t
r
. . . 22
3.14 Turn-Off Time
t
off
= t
d(off)
+ t
f
. . . 22
3.15 Inverse Diode Continuous
Forward Current
I
S
. . . . . . . . . . 24
3.16 Inverse Diode Direct Current,
Pulsed
I
SM
. . . . . . . . . . . . . . . . 24
3.17 Forward Voltage
V
SD
. . . . . . . . 24
3.18 Gate Charge
Q
G
. . . . . . . . . . . . 24
3.19 Gate-Source Charge
Q
GS
. . . . . 24
3.20 Gate-Drain Charge
Q
GD
. . . . . . 24
3.21 Reverse Recovery Time
t
rr
and Recovered Charge Q
rr
. . . . 25
3.22 Thermal Capacitance
C
th1
. . . . 25
3.23 Thermal Resistance
R
th1
. . . . . 25
3.24 Chip to Case
Thermal Resistance
R
thJC
or
Chip to Ambient Air
R
thJA
. . . . . . 25
3.25 Internal Gate Resistance
R
G
. . 25
3.26 Peak Rate of fall of Reverse
Recovery Current d
i
rr
/dt . . . . . . 25
3.27 Effective Output Capacitance
Energy Related
C
o(er)
. . . . . . . . 26
3.28 Effective Output Capacitance
Time Related
C
o(tr)
. . . . . . . . . . 26
3.29 Gate Plateau (Miller)
Voltage
V
plateau
. . . . . . . . . . . . . . 27
3.30 Drain-Source Avalanche
Breakdown Voltage
V
(BR)DS
. . . 27
3.31 Maximum
Soldering Temperature
T
sold
. . . 27
4Diagrams . . . . . . . . . . . . . . . . . 28
4.1 Power Dissipation
P
tot
= f (T) . . 28
4.2 Typical Output Characteristic . . 28
4.3 Safe Operating Area . . . . . . . . . 28
4.4 Typical Transfer Characteristic . 29
Erläuterung der Datenblattwerte
Explanation of Data Sheet Parameters
Explanation 5 V1.0, 2002-04
Inhalt Seite Contents Page
4.5 Typischer Drain-Source
Widerstand
R
DS(on)
= f (I
D
) . . . . 29
4.6 Drain-Source
Widerstand
R
DS(on)
= f (T
J
) . . . . 30
4.6.1 N-Kanal Transistoren . . . . . . . . 30
4.7 Drain-Source-
Durchbruchspannung
V
(BR)DSS
= f (T
J
) . . . . . . . . . . . . . 31
4.8 Gate-Schwellenspannung
V
GS(th)
= f (T
J
) . . . . . . . . . . . . . . 31
4.9 Typische Kapazitäten . . . . . . . . 32
4.10 Typische und maximale
Durchlasskennlinie
der Inverse-Diode . . . . . . . . . . . 32
4.11 Kollektorstrom
I
C
= f (T) . . . . . . 33
4.12 Drainstrom
I
D
= f (T) . . . . . . . . 33
4.13 Avalanche Energie
E
AS
= f (T
J
) 33
4.14 Transienter Wärmewiderstand
Z
thJC
= f (t
p
) . . . . . . . . . . . . . . . . 33
4.15 Typische Gate Ladung
V
GS
= t (Q
G
) . . . . . . . . . . . . . . . 34
4.16 Typische Schaltzeiten
t = f (I
D
), f (R
G
) . . . . . . . . . . . . . 36
4.17 Typische Schaltverluste
E = f (I
D
), f (R
G
) . . . . . . . . . . . . . 36
4.18 Typische Drain Stromsteilheit
d
i/dt = f (R
G
) . . . . . . . . . . . . . . . 37
4.19 Typische Drain-Source
Spannungssteilheit d
v
/d
t
=
f
(
R
G
) . . 37
4.20 Avalanche SOA I
AR
= f (t
AR
) . . 37
4.21 Periodische Avalanche
Leistung
P
AR
= f (f) . . . . . . . . . . 37
4.22 Typische in
Coss gespeicherte
Energie
E
OSS
= f (V
DS
) . . . . . . . 37
4.5 Typical Drain-Source On State
Resistance
R
DS(on)
= f (I
D
) . . . . . 29
4.6 Drain-Source On State
Resistance
R
DS(on)
= f (T
J
) . . . . 30
4.6.1 N-Channel Transistors . . . . . . . 30
4.7 Drain-Source
Breakdown Voltage
V
(BR)DSS
= f (T
J
) . . . . . . . . . . . . . 31
4.8 Gate Threshold Voltage
V
GS(th)
= f (T
J
) . . . . . . . . . . . . . . . 31
4.9 Typical Capacitances . . . . . . . . 32
4.10 Typical and Maximum
Forward Characteristic of
Inverse Diode . . . . . . . . . . . . . . 32
4.11 Collector Current
I
C
= f (T) . . . . 33
4.12 Drain Current
I
D
= f (T) . . . . . . . 33
4.13 Avalanche Energy
E
AS
= f (T
J
) . 33
4.14 Transient Thermal Impedance
Z
thJC
= f (t
p
) . . . . . . . . . . . . . . . . 33
4.15 Typical Gate Charge
V
GS
= t (Q
G
) . . . . . . . . . . . . . . . . 34
4.16 Typical Switching Time
t = f (I
D
), f (R
G
) . . . . . . . . . . . . . . 36
4.17 Typical Switching Losses
E = f (I
D
), f (R
G
) . . . . . . . . . . . . . 36
4.18 Typical Drain Current Slope
d
i/dt = f (R
G
) . . . . . . . . . . . . . . . 37
4.19 Typical Drain-Source
Voltage Slope d
v/dt = f (R
G
) . . . 37
4.20 Avalanche SOA
I
AR
= f (t
AR
) . . . 37
4.21 Avalanche Power Losses
P
AR
= f (f) . . . . . . . . . . . . . . . . . . 37
4.22 Typical
Coss Stored Energy
E
OSS
= f (V
DS
) . . . . . . . . . . . . . . 37
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