安森美半导体ESD保护器件NUP4201DR2-D 数据手册.pdf

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安森美半导体ESD保护器件NUP4201DR2-D 数据手册pdf,安森美半导体ESD保护器件NUP4201DR2-D 数据手册
NUP4201 DR2 TYPICAL CHARACTERISTICS 6 uOdu-u∽u 5 4 oumru> 3 100 50 100 150 200 100-50 150 200 T, TEMPERATURE (C) T, TEMPERATURE C) Figure 1. Reverse Breakdown versus Figure 2. Reverse Leakage versus Temperature Temperature 100 PEAK VALUE IRSM @8 us 90 30 zu5Ou 80 PULSE WIDTH (tp)IS DEFINED AS THAT POINT WHERE THE 25 PEAK CURRENT DECAY =8 us HALF VALUE IRSM/2 20 us uOO> 50 40 10 LL 20 0 0 40 0102030405060708090 t, TIME (us) Pp, PEAK PULSE CURRENT(A) Figure 3. 8 x 20 us Pulse Waveform Figure 4. Clamping voltage versus Peak pulse Current http:/onsemi.com NUP4201 DR2 APPLICATIONS INFORMATION The new NUP4201DR2 is a low capacitance TVs diode Option 2 array designed to protect sensitive electronics such as Protection of four data lines with bias and power supply communications systems, computers, and computer isolation resistor peripherals against damage due to esd events or transient overvoltage voltage conditions. Because of its low 1010 capacitance, it can be used in high speed l/o data lines. The /O2 integrated design of the NUP4201DR2 offers surge rated C low capacitance steering diodes and a tvs diode integrated in a single package(SO-8). If a transient condition occurs, 10K the steering diodes will drive the transient to the positive rail of the power supply or to ground. The tvs device protects the power line against overvoltage conditions to avoid damage to the power supply and any downstream components /O3 10 40 NUP4201DR2 Configuration Options Figure 6 The NUP4201DR2 is able to protect up to four data lines against transient overvoltage conditions by driving them to The NUP4201DR2 can be isolated from the power supply a fixed reference point for clamping purposes. The steering by connecting a series resistor between pins 2 and 3 and Vcc diodes will be forward biased whenever the voltage on the A 10 ks2 resistor is recommended for this application. This protected line exceeds the reference voltage(Vcc+ vf). The will maintain a bias on the internal Tvs and steering diodes diodes will force the transient current to bypass the sensitive reducing their capacitance circuit Data lines are connected at pins 1, 4, 6 and 7. The negative Option 3 reference is connected at pins 5 and 8. These pins must be Protection of four data lines using the internal Tvs diode connected directly to ground by using a ground plane to as reterence minimize the PCBs ground inductance. It is very imporlant to reduce the PCB trace lengths as much as possible to /O1 minimize parasitic inductances 1o20 Option 1 Protection of four data lines and the power supply using Vcc as reference NC一园 NC—图 6 /O1 170 2 5凵 [ 1O3 0 4 f+- Figure 7. In applications lacking a positive supply reference or h those cases in which a fully isolated power supply is required, the internal Tvs can be used as the reference. For /O3 these applications, pins 2 and 3 are not connected. In this configuration the steering diodes will conduct whenever the Figure 5. voltage on the protected line exceeds the working voltage of the Tvs plus one diode drop(vc=vf+ VTvs) For this configuration connect pins 2 and 3 directly to the positive supply rail(Vcc), the data lines are referenced to the ESD Protection of Power Supply Lines supply vollage. The internal TVs diode When using diodes for data line protection, referencing to overvoltage on the supply rail. Biasing of the steering diodes supply rail provides advantages. Biasing the diodes reduces their capacitance reduces their capacitance and minimizes signal distortion ng this topology with discrete devices does have disadvantages. This configuration is shown hel http:/onsemi.com NUP4201 DR2 Powe inductance will provide significant benefits in transient Supply ImmunIty Vcc Even with good board layout, some disadvantages are still present when discrete diodes are used to suppress esd events across datalines and the supply rail. Discrete diodes Protected Data Line with good transient power capability will have larger die and Device therefore higher capacitance. This capacitance becomes D2 problematic as transmission frequencies increase. Reducing capacitance generally requires reducing die size. These ESDneg VF +Vcc small die will have higher forward voltage characteristics at typical ESd transient current levels. This voltage combined with the smaller die can result in device failure Figure 8. The on semiconductor NUP4201DR2 was developed to Looking at the figure above, it can be seen that when a overcome the disadvantages encountered when using positive ESD condition occurs, diode di will be forward discrete diodes for ESD protection This device integrates a biased while diode d2 will be forward biased when a TVS diode within a network of steering diodes negative esd condition occurs. For slower transient conditions this system may be approximated as follows For positive pulse conditions vc=vcc+Ⅴfpl For negative pulse conditions ID2 D2 D4 DO D8 ESD events can have rise times on the order of some number of nanoseconds. Under these conditions the effect of parasitic inductance must be considered. A pictorial representation of this is shown below Power Supply ESDpos Figure 10. NUP4201 DR2 Equivalent Circuit During an ESd condition, the esd current will be driven D1T lESDpos to ground through the tvs diode as shown below. Protected Device Data Line Power △D2,Vc=vcc+Mf+ diESD/dt Supply ESDneg D1 ESDpos Protected Vc=-Vf- L dIESD/dt) Device Data line gure D2 An approximation of the clamping voltage for these fast transients would be For positive pulse conditions Vc=Vcc+ Vf+(l diEsD/dt) For negative pulse conditions Vc=-Ⅴf-( L diesD/dt) Figure 11. As shown in the formulas, the clamping voltage(Vc)not The resulting clamping voltage on the protected Ic will only depends on the vf of the steering diodes but also on the L diEsd/dt factor. A relatively small trace inductance can Vc=Ve+VrVs result in hundreds of volts appearing on the supply rail. This The clamping voltage of the Tvs diode is provided in endangers both the power supply and anything attached to Figure 4 and depends on the magnitude of the esd current that rail. This highlights the importance of good board The steering diodes are fast switching devices with unique layout. Taking care to minimize the effects of parasitic forward voltage and low capacitance characteristics http:/onsemi.com NUP4201 DR2 TYPICAL APPLICATIONS UPSTREAM USB PORT BUS D+ D R DOWNSTREAM USB PORT BUS BUS GND Controller NUP4201DR2 C GND BUS NUP2201 DT1 D+ dOWNSTREAM R USB PORT TTC GND Figure 12. ESD Protection for USB Port RJ45 Connector TⅩ+ TX+ Coupl PHY Transformers Ethernet RX+ RX+ (10/100) RX RX NUP4201 DR2 GND N/C N/C Figure 13 Protection for Ethernet 10/100(Differential mode) http:/onsemi.com NUP4201 DR2 R1 RTIP R2 R3 3 RRING 1/E1 TRANCENER NUP4201DR2 R4 TTIP R5 TRING Figure 14. TI/E1 Interface Protection http:/onsemi.com NUP4201 DR2 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUEAH 1. DIMENSIONING AND TOLERANC NG PER ANS|Y14.5M,1982 A—x 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION 4. MAXIMUM MOLD PROTRUSION 0. 15(0.006) PER SIDE 5. DIMENSION D DOES NOT INCLUDE DAMBAR B 0250010)~Y PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0. 127(0.005)TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07 - G MILLIMETERS INCHES DIM MIN MAX MIN MAX NX450 合明0019301 SEA PLA 1351750.0530.069 D03305100130020 1.27 BSC 0.050BSc ∩00(00 0.100.250.0040.010 M 01902500070010 0.401:270.0160.050 中0250102Y⑥X③ N0.250.5000100.020 s58062002280244 SOLDERING FOOTPRINT 4.0 0.275 0.155 1.270 0.024 SCALE 6: 1 nches *For additional information on our Pb-Free strategy and soldering details, please download the oN Semiconductor Soldering and Mounting techniques Reference Manual, SOLDERRM/D ON Semiconductor and (N are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability rising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitaticn special, consequential or incidental damages Typica"parameters which may be provided in SCiLLC data sheets anc/cr specifications can and do vary in different applications and actual performance may vary over time. All “T operating parameters, including"Typicals must be validated for each customer application by cus omer's technical experts. SCiLLC does not convey any license under its patent rights intended to support or sustain life or for any other application in which the failure of the scilla product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees. subsidiaries, affiliates with such unin against all claims. i s a,even i such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal and distributors harml nages, and experses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death Opportunity/Affirmative Action Emplcyer. This literature is subject to all applicable copyright laws anc is not for resale in any manner PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT N.AmericanteChnicalSupport:800-282-9855TollFreeonSemiconductorWebsitewww.onsemi.com Literature Distribution Center for oN Semiconductor USA/Canada P.O. Box Denver Colorado 80217 USA Europe, Middle East and Africa Technical Suppor OrderLiterature:http://www.onsemi.com/orderlit Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Phone: 421 33790 2910 Fax: 303-675-2176 or 800-344-3867 Tcll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Emailcrderlit@onsemi.com Phone:81-3-5773-3850 Salcs Ropresortativo NUP4201 DR2/D

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