微晶硅薄膜太阳能电池孵化层研究
1032 半导体学报 第27卷 图5是不同功率下制备的电池从p和n方向测 85 试的晶化率,从高斯三峰拟合解谱分析计算得到的 80 SC=4% 结果可看出:随辉光功率的增加,制备电池的晶化率 SC=5% 75 SC=6% 逐渐增大.正如我们在对材料14的系列研究中所表 明的:在研究的功卒范围内,随辉光功率增加,材料 70 的晶化程度越来越高,这和在电池中材料的研究结 果是完全对应的另外,从图5中还可看出:当功率 为30W时,P方向得到的晶化率和n方向得到的晶 化率相差较大,而随着功率的加大,两个方向晶化率 相差的较小.功率的增加,将导致制备电池的结构由 非晶成分较多逐渐过渡到微晶成分较多151.因此, 5101520253035404550 Power/W 有利于减薄p/i界而非晶孵化层的厚度,故而n,p 两方向的差异缩小.而低功率下p/i非晶孵化层的 图6不同硅烷浓度和辉光功率制备电池的晶化率 ig.6 Xc of solar cells prepared at different silane 贡献是使两者差异增大的主要原因.从减薄非晶孵 concentrations and discharge powers 化层来说,i层材料沉积的初始条件要选择能使制 备材料的晶化率足够高为佳 结论 本文主要对甚高频等离子增强化学气相沉积技 术制备的不同硅烷浓度和辉光功率条件下微晶硅薄 一P 膜太阳电池的结构进行了分析喇曼光谱对电池从 60 p和n方向测试晶化率的差别表明:微晶硅薄膜太 阳电池中p/i界面的非晶孵化层的厚度随硅烷浓度 的增加而增大,随辉光功率的增大而减小.适当的硅 烷浓度或适当的辉光功率可以降低孵化层的厚度 40 致谢感谢中国希腊政府间合作项目对本论文的 支持 Power/W 图5从p和n方向测试电池的晶化率 参考文献 Fig 5 Xc of solar cells measured from p side and n [1] Guha S Thin film silicon solar cells grown near the edge of amorphous to microcrystalline transition. 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Acta Ener 晶硅材料及电池半导体学报,2005,26(5):52] giae Solaris Sinica,2003,24(3):344( in Chinese)朱锋,周祯 Study of Incubation Layers in Microcrystalline Silicon Solar Cells Zhang Xiaodan, Zhao Ying, Gao Yantao, Zhu Feng, Wei Changchun Sun Jian, Geng Xinhua, and Xiong shaozhen Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology( Nankai University Tianjin University), Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Institute of Photo-Electronics Thin Fil Devices and Technique, Nankai University, Tianjin 300071, China Abstract: The structure of microcrystalline silicon thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition, is studied. Raman measurements indicate that there is an amorphous incubation layer at the p/i in- terface in the solar cells. The thickness of the incubation layer increases with increasing silane concentration and decreasing discharge power. A suitable silane concentration and discharge power can be used to reduce the thickness of the incubation layer Key words: microcrystalline silicon thin film solar cells; incubation layer; Raman scattering spectra PACC: 8115H Article ID:0253-4177(2005)06-103004 Project supported by the State Key Development Program for Basic Research of China( Nos. G2000028202, G2000028203), the Key project of Tianjin Municipal Science and Technology Commission(No 043186511),and the National Natural Science Foundation of China (No60506003) i Corresponding author. Email xdzhang nankai. edu. cn Received 8 October 2005, revised manuscript received 16 November 2005 C2006 Chinese Institute of Electronics