微晶硅薄膜太阳能电池孵化层研究.pdf

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微晶硅薄膜太阳能电池孵化层研究
1032 半导体学报 第27卷 图5是不同功率下制备的电池从p和n方向测 85 试的晶化率,从高斯三峰拟合解谱分析计算得到的 80 SC=4% 结果可看出:随辉光功率的增加,制备电池的晶化率 SC=5% 75 SC=6% 逐渐增大.正如我们在对材料14的系列研究中所表 明的:在研究的功卒范围内,随辉光功率增加,材料 70 的晶化程度越来越高,这和在电池中材料的研究结 果是完全对应的另外,从图5中还可看出:当功率 为30W时,P方向得到的晶化率和n方向得到的晶 化率相差较大,而随着功率的加大,两个方向晶化率 相差的较小.功率的增加,将导致制备电池的结构由 非晶成分较多逐渐过渡到微晶成分较多151.因此, 5101520253035404550 Power/W 有利于减薄p/i界而非晶孵化层的厚度,故而n,p 两方向的差异缩小.而低功率下p/i非晶孵化层的 图6不同硅烷浓度和辉光功率制备电池的晶化率 ig.6 Xc of solar cells prepared at different silane 贡献是使两者差异增大的主要原因.从减薄非晶孵 concentrations and discharge powers 化层来说,i层材料沉积的初始条件要选择能使制 备材料的晶化率足够高为佳 结论 本文主要对甚高频等离子增强化学气相沉积技 术制备的不同硅烷浓度和辉光功率条件下微晶硅薄 一P 膜太阳电池的结构进行了分析喇曼光谱对电池从 60 p和n方向测试晶化率的差别表明:微晶硅薄膜太 阳电池中p/i界面的非晶孵化层的厚度随硅烷浓度 的增加而增大,随辉光功率的增大而减小.适当的硅 烷浓度或适当的辉光功率可以降低孵化层的厚度 40 致谢感谢中国希腊政府间合作项目对本论文的 支持 Power/W 图5从p和n方向测试电池的晶化率 参考文献 Fig 5 Xc of solar cells measured from p side and n [1] Guha S Thin film silicon solar cells grown near the edge of amorphous to microcrystalline transition. Solar Energy 为进一步加深功率和硅烷浓度综合作用对电池 2004,77(6):887 [2] Kondo M, Matsuda A Novel aspects in thin film silicon cells- 的结构参数晶化率影响的了解,分别对硅烷浓度为 amorphous, microcrystalline and nanocrystalline silicon. Thin 4%,5%和6%在不同功率条件下制备的微晶硅电 Solid films,2004,457(1):97 池进行了喇曼光谱测试,结果如图6所示.对于4% [3] Keppner II, Meier J, Torres P,et al. Microcrystalline silicon 硅烷浓度的系列,当功率从9W增加到12W时,电 and micromorph tandem solar cells. Appl Phys A, 1999, 69 169 池的晶化率随功率的增加而快速增大,而12W后一 [43 Meier J, Dubail S, Golay S,et 直到26W,晶化率保持在78%不变,当功率增加到 the impact on micromorph tandem solar cells. Solar Energy 29W时,电池的晶化率略微有点下降.而对于5%硅 Materials and Solar Cells, 2002, 74: 457 烷浓度系列,在研究的功率范围内,随着功率的增[511 akatsuka H,NoaM, Yonekura y,ea. Development of 加,薄膜的晶化率一直在增加,6%的硅烷浓度给出 high efficiency large area silicon thin film modules using VHF-PECVD. Solar Energy, 2004, 77(6): 951 了相同的变化规律而且图中也很清楚地给出:同样「6]MaiY, Klein s,etal.! Microcrystalline silicon solar cells de 的辉光功率,硅烷浓度越大,相应的晶化率越低,因 posited at high rates by combination of vHF-PECVD and 此,从对电池晶化率的分析可知:要想降低微晶硅电 high working prcssurc. Preprint-19th EU PVSEC, Paris, 2004 池中p/i界面非晶孵化层的厚度,要选择合适的沉 [7] Guo Xiaoxu, Zhu Meifang, Liu Jinlong, et al. Microstructures of micro-crystalline silicon thin films prepared by hot wire 积条件,选择的原则是要保证制备电池具有一定的 rogen dilution. Actd Physica 晶化率 Sinica,198,47(9);1542( in Chinese)[郭骁旭,朱美芳,刘金 第6期 张晓丹等:微晶硅薄膜太阳电池中孵化层研究 龙,等.高氢稀释制备微晶硅薄膜微结构的研究.物理学报, 华,熊绍珍,等,复合绒面透明导电薄膜研究.太阳能学报 1998,47(9):1542 2003,24(3):344 L8J Zhu Feng, Zhang Xiaodan, Zhao Ying,et al. Effect of silane [12] Zhang Xiaodan, Zhao Ying, Zhu Feng, et al.Fabrication of concentration on intrinsic microcrystalline silicon. Chinese high growth rate solar-cell-quality uc-Si: H thin films by Journal of Semiconductors, 2004. 25(12):1700(in Chinese) VHF-PECVD. Chinese Physics, 2004. 13(8):1370 L朱锋,张晓丹,赵颖,等硅烷浓度对本征徽晶硅材料的影响.[13] Zhu Feng, Zhao Ying, Zhang Xiaodan,etal.Pnc-Si:H 半导体学报,2004,25(12):1700 film materials and its application in microcrystalline silicon [9] Yang H, Wu C, Mai Y, et al. Fabrication of hydrogenated solar cells. Journal of Optoclcctronics Laser, 2004, 15(4):381 microcrystalline silicon thin films at low temperature by ( in chinese)[朱锋,赵颖,张晓丹,等.P-nc-Si薄膜材料及其 VHF-PECVD. Chinese Journal of Semiconductors, 2002, 23 在徵品硅薄膜太阳能电池上的应用.光电子·激光,2004,15 (9):902 (4):381] L10] Zhang Xiaodan, Zhao Ying, Zhu Feng, et al. Study of verti- [14 Zhang Xiaodan, Zhao Ying Zhu Feng, et al. Effects of dis al non-unifor mity of microcrystalline silicon thin film using charge power on silicon-based films fabricated by VHf. Raman spectra and AFM. Journal of Synthetic Crystals PECVD. Journal of Synthetic Crystals, 2004, 33(4): 662 2004,3(6):960 in Chinese儿张跷丹,赵颖,朱锋,等.微晶硅 [15] Zhang Xiaodan, Zhao Ying, Zhu Feng, et al. Microcrystal 薄膜纵向不均匀性的 Raman光谱和AFM研究.人工晶体学 line silicon material and solar cells fabricated by VHF- 报,2004,33(6):960 PECVD. Chinese Journal of Semiconductors, 2005, 26(5):52 [11] Zhu Feng, Zhou Zhenhua, Xiong Shaozhen, et al. Study of ( in chinese)张晓丹,赵颖,朱锋,等.VHF- PECVD制备微 multiple textured transparent conductive films. Acta Ener 晶硅材料及电池半导体学报,2005,26(5):52] giae Solaris Sinica,2003,24(3):344( in Chinese)朱锋,周祯 Study of Incubation Layers in Microcrystalline Silicon Solar Cells Zhang Xiaodan, Zhao Ying, Gao Yantao, Zhu Feng, Wei Changchun Sun Jian, Geng Xinhua, and Xiong shaozhen Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology( Nankai University Tianjin University), Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Institute of Photo-Electronics Thin Fil Devices and Technique, Nankai University, Tianjin 300071, China Abstract: The structure of microcrystalline silicon thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition, is studied. Raman measurements indicate that there is an amorphous incubation layer at the p/i in- terface in the solar cells. The thickness of the incubation layer increases with increasing silane concentration and decreasing discharge power. A suitable silane concentration and discharge power can be used to reduce the thickness of the incubation layer Key words: microcrystalline silicon thin film solar cells; incubation layer; Raman scattering spectra PACC: 8115H Article ID:0253-4177(2005)06-103004 Project supported by the State Key Development Program for Basic Research of China( Nos. G2000028202, G2000028203), the Key project of Tianjin Municipal Science and Technology Commission(No 043186511),and the National Natural Science Foundation of China (No60506003) i Corresponding author. Email xdzhang nankai. edu. cn Received 8 October 2005, revised manuscript received 16 November 2005 C2006 Chinese Institute of Electronics

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