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Metalens-integrated compact imaging devices

for wide-field microscopy

Beibei Xu,

a,b,†

Hanmeng Li,

a,b,†

Shenglun Gao,

a,b

Xia Hua ,

Cheng Yang ,

Chen Chen,

a,b

Feng Yan,

Shining Zhu,

a,b

and Tao Li

a,b,

Nanjing University, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, Key Laboratory of

Intelligent Optical Sensing and Integration, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing, China

Collaborative Innovation Center of Advanced Microstructures, Nanjing, China

Nanjing University, School of Electronic Science and Engineering, Nanjing, China

Abstract. Metasurfaces have demonstrated unprecedented capabilities in manipulating light with ultrathin

and flat architectures. Although great progress has been made in the metasurface designs and function

demonstrations, most metalenses still only work as a substitution of conventional lenses in optical settings,

whose integration advantage is rarely manifested. We propose a highly integrated imaging device with silicon

metalenses directly mounted on a complementary metal oxide semiconductor image sensor, whose work ing

distance is in hundreds of micrometers. The imaging performances including resolution, signal-to-noise ratio,

and field of view (FOV) are investigated. Moreover, we develop a metalens array with polarization-multiplexed

dual-phase design for a wide-field microscopic imaging. This approach remarkably expands the FOV without

reducing the resolution, which promises a non-limited space-bandwidth product imaging for wide-field

microscopy. As a result, we demo nstrate a centimeter-scale prototype for microscopic imaging, showing

uniqueness of meta-design for compact integration.

Keywords: metalens; compact imaging device; polarization multiplexing; wide-field microscopy.

Received Jul. 31, 2020; revised manuscript received Oct. 11, 2020; accepted for publication Oct. 19, 2020; published online

Nov. 12, 2020.

reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

[DOI: 10.1117/1.AP.2.6.066004]

1 Introduction

Curre nt imaging technology has been well developed by ver-

satile strategies for outstanding performances in high resolu-

tion, high image quality, and broad wavelength band. Most

of these techniques are established on the basis of mature re-

fractive or reflective optical elements, such as lenses, internal

reflection mirrors, etc., which result in optical systems that

are bulky, heavy, and inconvenient for portability. However,

more compact, light, and stable optica l systems are the ever-

growing requirement of modern applications. Recent advances

in computational imaging (including the lensless and scatter-

ing medium imaging) have shown a successful route to reduce

the complexity of the optical system by discarding the refrac-

tive lenses.

1,2

Nevertheless, they are not a real phy sical image,

and the image quality strongly relies on the post-processing

algorithms, such as iterative phase recovery algorithm,

3,4

com-

pressive sensing,

5,6

and Fourier ptychography.

7,8

It inevitably

requires computational resources that are time consuming

and sometimes needs particular prior knowledge for imaging

reconstruction.

Benefiting from the development of nanofabrication technol-

ogy, the metasurface as a new breakthrough of optical design

has demonstrated tremendous capabilities in manipulating

light by subwavelength unit cells,

9–12

and fascinating applica-

tions with the low loss dielectric metasurfaces have been

revealed.

13–16

Among these applications, the metalens is one

of the most promising candidates for upgrading current optical

systems. During the past several years, exciting progress con-

cerning the imaging performance of the metalens has been

made, including improved efficiency,

17,18

broadband achromati-

cism,

19–21

broadened field-of-view (FOV),

22,23

polarization func-

tionalities,

24,25

etc., which indicates a closer step toward real

*Address all correspondence to Tao Li, taoli@nju.edu.cn

†

These authors contributed equally.

Research Article

Advanced Photonics 066004-1 Nov∕Dec 2020

•

Vol. 2(6)

applications. As we revisit metasurface design besides those

achievements, the ultrathin, ultralight, and flat architecture

features as the core advantage of this newly developing optical

design. However, only a few works focus on compact integra-

tion,

26,27

and there is a lack of systematic characterization of

imaging performance. In most previous works, metalenses act

only as subst itutes for conventional refractive lenses and play

almost the same role in conventional optical settings without

showing their uniqueness for integration.

21,28–30

In this work, we directly integrate the metalenses onto the

complementary metal oxide semiconductor (CMOS) image

sensor to show the major advantage of the flat metalens. The

metalenses were manufactured in amorphous silicon (α-Si)

nano-posts designed by the geometric Pancharatnam–Berry

(PB) phase on a SiO

substrate, where the Si material was used

for potential compatibility to full CMOS-based devices. After

careful characterization of the imaging qualities with respect

to the resolution, signal-to-noise ratio (SNR), FOV, and so on,

we show the capability of this metalens-integrated ima ging

device (MIID) for spectral focal tuning

due to the large

dispersion. It breaks the limitation of lens-free shadow imaging

that cannot resolve the depth-of-field (DOF) of the object.

More important ly, we develop a metalens array to cover a

wide area of CMOS image sensors for a wide-field imaging.

To eliminate the blind areas in multiple-images-stitching,

here, we utilize a polarization-multiplexed dual-phase (PMDP)

design (with respect to two circular polarizations) to access

two sets of lenses with complementary image areas. A full

stitched wide-field image is completed only by switching

the polarization without any mechanical movement. As a re-

su lt, we achieved hig h-resolution images (∼1.74 μm almost

limited by i mage sensor pixel) with a millimeter-scale image

area (expandable to whole centimeter-scale CMOS sensor),

which was ultimately implemented in a ∼3-cm size device

prototype. This ultra-compact microscope system promises

more exciting applications of metalens in high resolution, large

FOV, and tunable DOF imaging.

2 Device Architecture and Fabrication

Figure 1(a) shows the schemati cs of imaging setup for our

MIID. An optically clear adhesive (OCA) tape (Tesa, 69402)

is used to transfer and fix the metalens on the CMOS image

sensor (Imaging source, DMM 27UJ003-ML, pixel size:

1.67 μm × 1.67 μm) with proper thickness for imaging distance

v (the distance between the CMOS image sensor and metalens)

in our experiment. Here, the OCA is employed for its colorless

transparency with high transmittance (>90%) in the visible and

near-infrared ranges, which is widely used in optoelectronic

devices. We also take OCA tape as the spacer medium of inte-

gration for the well-defined stationary thickness. The detailed

metalens integration process is further described in Sec. S1

of the Supplementary Material. With skillful operation, the in-

tegration deviation is very small, and the distortion caused by

lens tilting can be handled. Once the metalens is mounted on the

CMOS image sensor, the imaging distance is fixed, and a clear

image can be acquired by tuning the object distance u (the dis-

tance between metalens and object) with the translation stage.

Figure 1(b) shows the photograph of the highly compact MIID

(here, v ¼ 500 μm ). It should be noted that, due to the complex

medium layers in both image space and object space of the meta-

lens, the parameters (u; v) here are effective ones containing the

influence of the medium. We first measured the effective imag-

ing distance and take it as constant in our theoretical design.

A white-light source of a halogen lamp with color filters was

employed for incoherent monochromatic illumination. The met-

alens is designed as an aplanatic lens to eliminate on-axis aber-

rations for the 4f imaging scheme (u ¼ v ¼ 2f) with a phase

profile of

φ ¼

4π



2f −

ﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃ

þ 4f



; (1)

where λ is the designed working wavelength, f is the focal

length, and R is the radial coordinate. This required phase profile

Fig. 1 Device architecture and metalens fabrication. (a) Schematic of the optical setup for MIID.

(b) Photograph of the highly compact MIID. (c) Top-view optical microscope image and side-view

SEM image of the fabricated α-Si metalens with a diameter of 200 μm.

Xu et al.: Metalens-integrated compact imaging devices for wide-field microscopy

Advanced Photonics 066004-2 Nov∕Dec 2020

•

Vol. 2(6)

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