Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

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In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated. With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365?nm, high UV/visible rejection ratio of

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2021-01-26
  • 至尊王者

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