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### 美光MT29F16G NAND Flash存储器详细解析 #### 一、产品概述美光（Micron）的MT29F16G是一款高性能、高可靠性的NAND Flash存储器，采用单层单元（SLC）技术，支持Open NAND Flash Interface (ONFI) 1.0标准，确保了与多种平台的兼容性和互操作性。该存储器设计用于满足工业级应用对数据保留和耐久性的高要求。 #### 二、关键特性与规格 ##### 1. ONFI 1.0标准兼容 MT29F16G完全符合ONFI 1.0规范，这是一项开放标准，旨在实现NAND Flash设备与控制器之间的标准化接口，从而简化设计并提高性能和可靠性。 ##### 2. SLC技术使用单层单元技术，每个单元存储1位数据，提供更快的读写速度、更低的功耗以及更长的数据保持能力和擦写周期寿命，特别适合于需要频繁读写的工业和商业应用。 ##### 3. 组织结构 - 页面大小：x8时为2112字节（2048+64字节），x16时为1056词（1024+32词） - 块大小：64页面（128K+4K字节） - 平面大小：每平面2个平面×2048块 - 设备大小：4Gb版本有4096块；8Gb版本有8192块；16Gb版本有16384块 ##### 4. 异步I/O性能 - tRC/tWC：在3.3V下为20ns，在1.8V下为25ns，展示了快速的命令响应时间。 ##### 5. 阵列性能 - 读取页面：25μs - 编程页面：200μs（典型值，1.8V和3.3V） - 擦除块：700μs（典型值） ##### 6. 命令集 - 支持ONFI NAND Flash协议 - 高级命令集，包括页面编程缓存模式、页面读取缓存模式、一次可编程（OTP）模式、双平面命令等，提高了数据处理效率和灵活性。 ##### 7. 操作状态字节提供软件方法来检测操作完成、通过/失败条件以及写保护状态，便于错误管理和状态监控。 ##### 8. Ready/Busy#（R/B#）信号硬件方法用于检测操作完成，无需额外软件干预。 ##### 9. WP#信号全设备写保护功能，防止意外数据写入或修改。 ##### 10. 数据保留与耐久性 - 数据保留能力：长达10年 - 耐用性：支持100,000次编程/擦除周期，适用于高负载环境。 ##### 11. 工作电压范围 - VCC：2.7V至3.6V，1.7V至1.95V，适应不同电源条件。 ##### 12. 工作温度 - 商业级：0°C至+70°C - 工业级（IT）：-40°C至+85°C，覆盖宽泛的工作温度范围，适用于各种环境。 ##### 13. 封装类型 - 48针TSOP类型1，CPL2（中心分界线）封装，或63球VFBGA（非常薄型细间距球栅阵列），确保了在不同应用场景中的适用性和稳定性。 #### 三、注意事项 - 第一块（地址00h）在出厂时带有ECC，需满足最低ECC要求。 - 块0在编程/擦除周期少于1000次时，需要1位ECC。 - 重置（FFh）命令是上电后的第一个必需命令。 - 设备初始化方法（Nand_Init）在上电后可用，详情联系工厂。 - 内部数据移动操作仅在读取数据的平面内支持。美光MT29F16G NAND Flash存储器以其卓越的性能、高度的可靠性和广泛的适用性，成为工业和商业应用中数据存储的理想选择。

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NAND Flash Memory

MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,

MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,

MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,

MT29F16G08AJADAWP

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks

16Gb: 16,384 blocks

• Asynchronous I/O performance

–

RC/

WC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs

– Program page: 200µs (TYP: 1.8V, 3.3V)

– Erase block: 700µs (TYP)

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Program page cache mode

– Read page cache mode

– One-time programmable (OTP) mode

– Two-plane commands

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for

detecting

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware

method of detecting operation completion

• WP# signal: Write protect entire device

• First block (block address 00h) is valid when ship-

ped from factory with ECC. For minimum required

ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-

cles are less than 1000

• RESET (FFh) required as first command after pow-

er-on

• Alternate method of device initialization (Nand_In-

it) after power up (contact factory)

• Internal data move operations supported within the

plane from which data is read

• Quality and reliability

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range

– V

: 2.7–3.6V

– V

: 1.7–1.95V

• Operating temperature:

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package

– 48-pin TSOP type 1, CPL

– 63-ball VFBGA

Notes:

1. The ONFI 1.0 specification is available at

www.onfi.org.

2. CPL = Center parting line.

3. See Program and Erase Characteristics for

R_ECC and

PROG_ECC specifications.

4. These commands supported only with ECC

disabled.

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Contents

General Description ......................................................................................................................................... 8

Signal Descriptions ........................................................................................................................................... 8

Signal Assignments ........................................................................................................................................... 9

Package Dimensions ....................................................................................................................................... 12

Architecture ................................................................................................................................................... 15

Device and Array Organization ........................................................................................................................ 16

Asynchronous Interface Bus Operation ........................................................................................................... 20

Asynchronous Enable/Standby ................................................................................................................... 20

Asynchronous Commands .......................................................................................................................... 20

Asynchronous Addresses ............................................................................................................................ 22

Asynchronous Data Input ........................................................................................................................... 23

Asynchronous Data Output ......................................................................................................................... 24

Write Protect# ............................................................................................................................................ 25

Ready/Busy# .............................................................................................................................................. 25

Device Initialization ....................................................................................................................................... 30

Command Definitions .................................................................................................................................... 31

Reset Operations ............................................................................................................................................ 34

RESET (FFh) ............................................................................................................................................... 34

Identification Operations ................................................................................................................................ 35

READ ID (90h) ............................................................................................................................................ 35

READ ID Parameter Tables .............................................................................................................................. 36

READ PARAMETER PAGE (ECh) ...................................................................................................................... 39

Parameter Page Data Structure Tables ............................................................................................................. 40

Bare Die Parameter Page Data Structure Tables ................................................................................................ 45

READ UNIQUE ID (EDh) ................................................................................................................................ 48

Feature Operations ......................................................................................................................................... 49

SET FEATURES (EFh) .................................................................................................................................. 50

GET FEATURES (EEh) ................................................................................................................................. 51

Status Operations ........................................................................................................................................... 54

READ STATUS (70h) ................................................................................................................................... 55

READ STATUS ENHANCED (78h) ................................................................................................................ 55

Column Address Operations ........................................................................................................................... 57

RANDOM DATA READ (05h-E0h) ................................................................................................................ 57

RANDOM DATA READ TWO-PLANE (06h-E0h) ............................................................................................ 58

RANDOM DATA INPUT (85h) ...................................................................................................................... 59

PROGRAM FOR INTERNAL DATA INPUT (85h) ........................................................................................... 60

Read Operations ............................................................................................................................................. 62

READ MODE (00h) ..................................................................................................................................... 64

READ PAGE (00h-30h) ................................................................................................................................ 64

READ PAGE CACHE SEQUENTIAL (31h) ...................................................................................................... 65

READ PAGE CACHE RANDOM (00h-31h) .................................................................................................... 66

READ PAGE CACHE LAST (3Fh) .................................................................................................................. 68

READ PAGE TWO-PLANE 00h-00h-30h ....................................................................................................... 69

Program Operations ....................................................................................................................................... 71

PROGRAM PAGE (80h-10h) ......................................................................................................................... 72

PROGRAM PAGE CACHE (80h-15h) ............................................................................................................. 72

PROGRAM PAGE TWO-PLANE (80h-11h) .................................................................................................... 75

Erase Operations ............................................................................................................................................ 77

ERASE BLOCK (60h-D0h) ............................................................................................................................ 77

ERASE BLOCK TWO-PLANE (60h-D1h) ....................................................................................................... 78

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Internal Data Move Operations ....................................................................................................................... 79

READ FOR INTERNAL DATA MOVE (00h-35h) ............................................................................................. 80

PROGRAM FOR INTERNAL DATA MOVE (85h–10h) ..................................................................................... 81

PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) ................................................................. 82

Block Lock Feature ......................................................................................................................................... 83

WP# and Block Lock ................................................................................................................................... 83

UNLOCK (23h-24h) .................................................................................................................................... 83

LOCK (2Ah) ................................................................................................................................................ 86

LOCK TIGHT (2Ch) ..................................................................................................................................... 87

BLOCK LOCK READ STATUS (7Ah) .............................................................................................................. 88

One-Time Programmable (OTP) Operations .................................................................................................... 90

Legacy OTP Commands .............................................................................................................................. 90

OTP DATA PROGRAM (80h-10h) ................................................................................................................. 91

RANDOM DATA INPUT (85h) ...................................................................................................................... 92

OTP DATA PROTECT (80h-10) ..................................................................................................................... 93

OTP DATA READ (00h-30h) ......................................................................................................................... 95

Two-Plane Operations .................................................................................................................................... 97

Two-Plane Addressing ................................................................................................................................ 97

Interleaved Die (Multi-LUN) Operations ......................................................................................................... 106

Error Management ........................................................................................................................................ 107

Internal ECC and Spare Area Mapping for ECC ............................................................................................... 109

Electrical Specifications ................................................................................................................................. 111

Electrical Specifications – DC Characteristics and Operating Conditions .......................................................... 113

Electrical Specifications – AC Characteristics and Operating Conditions .......................................................... 115

Electrical Specifications – Program/Erase Characteristics ................................................................................ 118

Asynchronous Interface Timing Diagrams ...................................................................................................... 119

Revision History ............................................................................................................................................ 131

Rev. N – 10/12 ............................................................................................................................................ 131

Rev. M – 02/12 ........................................................................................................................................... 131

Rev. L – 1/12 .............................................................................................................................................. 131

Rev. K – 11/11 ............................................................................................................................................ 131

Rev. J – 09/11 ............................................................................................................................................. 131

Rev. I – 07/11 ............................................................................................................................................. 131

Rev. H – 12/10 ............................................................................................................................................ 131

Rev. G – 10/10 ............................................................................................................................................ 131

Rev. F – 06/10 ............................................................................................................................................ 131

Rev. E – 05/10 ............................................................................................................................................ 131

Rev. D – 03/10 ............................................................................................................................................ 132

Rev. C – 01/10 ............................................................................................................................................ 132

Rev. B – 10/09 ............................................................................................................................................ 132

Rev. A – 07/09 ............................................................................................................................................ 132

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

List of Tables

Table 1: Signal Definitions ............................................................................................................................... 8

Table 2: Array Addressing – MT29F4G08 (x8) .................................................................................................. 16

Table 3: Array Addressing – MT29F4G16 (x16) ................................................................................................. 17

Table 4: Array Addressing – MT29F8G08 and MT29F16G08 (x8) ....................................................................... 18

Table 5: Array Addressing – MT29F8G16 ( x16) ................................................................................................ 19

Table 6: Asynchronous Interface Mode Selection ............................................................................................ 20

Table 7: Command Set .................................................................................................................................. 31

Table 8: Two-Plane Command Set .................................................................................................................. 33

Table 9: READ ID Parameters for Address 00h ................................................................................................. 36

Table 10: READ ID Parameters for Address 20h ............................................................................................... 38

Table 11: Parameter Page Data Structure ........................................................................................................ 40

Table 12: Parameter Page Data Structure ........................................................................................................ 45

Table 13: Feature Address Definitions ............................................................................................................. 49

Table 14: Feature Address 90h – Array Operation Mode ................................................................................... 50

Table 15: Feature Addresses 01h: Timing Mode ............................................................................................... 52

Table 16: Feature Addresses 80h: Programmable I/O Drive Strength ................................................................ 53

Table 17: Feature Addresses 81h: Programmable R/B# Pull-Down Strength ...................................................... 53

Table 18: Status Register Definition ................................................................................................................ 54

Table 19: Block Lock Address Cycle Assignments ............................................................................................ 85

Table 20: Block Lock Status Register Bit Definitions ........................................................................................ 88

Table 21: Error Management Details ............................................................................................................. 107

Table 22: Absolute Maximum Ratings ............................................................................................................ 111

Table 23: Recommended Operating Conditions ............................................................................................. 111

Table 24: Valid Blocks ................................................................................................................................... 111

Table 25: Capacitance ................................................................................................................................... 112

Table 26: Test Conditions .............................................................................................................................. 112

Table 27: DC Characteristics and Operating Conditions (3.3V) ....................................................................... 113

Table 28: DC Characteristics and Operating Conditions (1.8V) ....................................................................... 114

Table 29: AC Characteristics: Command, Data, and Address Input (3.3V) ........................................................ 115

Table 30: AC Characteristics: Command, Data, and Address Input (1.8V) ........................................................ 115

Table 31: AC Characteristics: Normal Operation (3.3V) .................................................................................. 116

Table 32: AC Characteristics: Normal Operation (1.8V) .................................................................................. 116

Table 33: Program/Erase Characteristics ....................................................................................................... 118

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN