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Si线的吸收优化 评分:

通过光学模拟方法TMM,改变了其直径填充比等因素优化几何参数,获得最优的Si吸收。
J.-Y. Jung et al./ Solar Energy Materials S Solar Cells 112(2013)84-90 alleviate the large mismatch in effective refractive indexes(n) In spite of the superior optical absorptance of SiNWs, it has between air(n=1)and a silicon substrate(n=3.68 at 810 nm). been reported [25] that their cell conversion efficiencies were still The SiNWs fabricated using MAE methods normally show a tapered lower than those of a conventional silicon solar cell. One of the morphology towards the top-ends of nanowires due to lateral major reasons for low conversion efficiencies stems from high etching [29 This is because regions close to the top of a nanowire bulk and surface recombination rates, which degrade quantum are naturally exposed to the etching solution for a longer time than efficiency [ 24, 30]. The recombination rate increases with regions at the bottom of a wire, which are close to the interface increased filling ratios or nanowire lengths because the overall between SiNWs and a substrate. Therefore, it is possible to specifi- portion of photons absorbed into SiNWs (relative to the under cally tailor the refractive index along a wire axis using wire tapering. lying Si substrate)increases. To realize high conversion efficiency Fig. 3 depicts schematic illustrations showing the profiles of in SiNW solar cells, the geometrical parameters of filling ratio and the effective refractive index across the air-to-wire axis at a wire length require optimization This is critical for minimizing wavelength of 810 nm. Note that the effective refractive index recombination rates while achieving superior antireflection char was calculated using the weighted volumes of SiNw arrays acteristics [31. according to their filling ratio and length. In zone a(between Fig. 4(b)and (c)shows typical I-v characteristics with the air and nanowire tips), optical reflectance was greatly suppressed external quantum efficiencies (EQE)of SinW solar cells as d because the nanowires made by mae generally showed sharp tip- function of filling ratio The light absorptance of all samples were ends due to tapering. This morphology resulted in a graded specifically adjusted to 99% because the wire length and filling refractive index profile. In zone c(between the bottom of a ratio could be precisely controlled. the best photovoltaic perfor nanowire and the substrate) there was usually a large mismatch mance was observed in a siNw cell with a filling ratio of 38%, an in refractive index. This tendency became more remarkable under open circuit voltage(Voc) of 517 mv, a short circuit current Usc)of low filling ratios(Fig 3)because the major reflection occurred at 28.74 mA/ cm, a fill factor (FF)of 65.4, and a conversion efficiency the interface between sinws and a substrate (CE)of 9.65%. Table 1 displays the Voc, Jsc, FF, and Ce values for all The average absorptances of siNw samples, depending on samples. As shown in Fig. 4(b), the Jsc and ce increased with filling ratio and length, were calculated in the wavelength range increased filling ratio To achieve the same absorptance, a lower of 300-1000 nm( Fig 4(a)). The wire length required to obtain the filling ratio requires longer wire lengths. This results in dramatic same amount of light absorptance was found to decrease with decreases in quantum efficiency(QE), especially for the shor increased wire filling ratios. The wire length of 1.2 um could wavelength region of 400-800, although QE is not significantly suppress light reflection enough to obtain 99% absorptance at a degraded in long wavelengths above 800 nm(see Fig. 4(c)). High filling ratio of 38%, while the filling ratio of 12% required a wire energy photons(short wavelengths )are absorbed into SiNWs, but length of n 6 um. Light absorptance could be controlled via the low-energy photons (long wavelengths) are estimated to mostly tradeoff relation between filling ratio and wire length to achieve a absorb by the si substrate. Increasing wire lengths caused the light absorptance of 99% photogenerated charge carriers to easily recombine before reaching a 30 si filling ratio NW length e25 38% 20 -05pm 20 18% 15 1.5um 15 12% 2um 0 10 0 400 600 800 1000 400 600 800 1000 Wavelength(nm) Wavelength(nm) Fig. 2. Total reflection spectra of SiNW arrays with varied (a)filling ratios(Ag depostion time)of 38%(10 s), 27% (30 s), 18%(60 s), and 12%(120 s)at same wire length of 2 um and(b) wire lengths of 0.5 um, 1 um, 1.5 um, and 2 um at filling ratio of 38% 号4」。F:38%,L:05pm db F:38%,L:2um C F:12%, L: 2um siNWs SiNWs SiNWs HA B iC B Length of siNW (um) Fig. 3. Schematic illustrations showing effective refractive index profile of sinW layers across air-to-wire axis depending on combination of filling ratio and wire length (a% and 0.5 um. (b)38%and 2 um, and(c 12% and 2 um. black arrows denote mismatch regions in effective refractive indexes. sinW arrays fabricated by mae consist of three representative tapered regions including(a)air/SiNW transition layer,(B)tapered SiNW layer, and(C)SiNW/Si substrate transition layer. The shapes of two transition zones(A)and (C)in Fig 3)are intrinsically determined by nanowire lengths, filling ratio, and tapering features [11 J.-Y. Jung et aL. Solar Energy Materials S Solar Cells 112(2013)84-90 a 100 0 目| si filling ratio length 10 38%12pm 27%3m 18%45p 90 Si filling ratio面 12%6um 38% 27% 18% 12% 80 0.00.10.20.30405 Length of siNW (um) Voltage(V) C e25 3.2 50 840 289 A: Surface area 30 口B: Emitter volume filling ratio length %12pm 15 强昌E 24 27%3p 189%4.5 12%6um 2.0 400 8001000 10 Wavelength(nm si Filling Ratio ( % Fig 4.(a)Average absorption of sinw samples with varied filling ratios of 38%, 27%, 18%, and 12% as a function of wire length. (b)Typical I-V characteristics and (c) eqe of SiNW soldi cells depending on the combination of filling ratio and NW lengthl: 38% and 1.2 Hm, 27% and 3 Hm, 18% and 4.5 HIll, and 12% dnd 6 u. All SiNW solar cells have same light absorption of 99%. (d)Surface area enhancement(AsiNwAplanar)and emitter volume enhancement(BSiNw/ Planar)of SiNWs over planar Si (Inset)Schematic showing the surface area(dotted line)and emitter volume (red area resulted by the formation of sinws. for interpretation of the references to color in this figure legend, the reader is referred to the web version of this article. Table 1 V>0.8 stemmed from series resistance. Ideality factors(a)were Photovoltaic performances of SiNW solar cells depending on the combination of extracted from the line fits so that dominant conduction mechan filling ratio and Nw length under simulated AM 1.5 G illumination isms were distinguishable. The a was calculated by eq (1), Voc (mv Jsc (mA/cm") 38% and 1.2 um 517 66.8 9.65 kB×7dn/ak 27% and 3 um 24.80 8.75 18%dd4.5ml 1.15 where kB is Boltzmanns constant, T is temperature, and q is the 12% and 6 um 514 20.59 62.5 6.62 charge of an electron. Since all the SiNW solar cells showed almost the I-V slopes il III(Fig. 5(a)) and (Fig. 4(b)), they were all estimated to have similar values of series resistance, which could be disregarded for identifying the cor the electrode because heavily doped sinWs with a large surface area duction mechanisms showed very high surface and Auger recombination velocities In region Il, a increased from 2. 87 at the high filling ratio of associated with their high surface area and large emitter volume. 38% to 4.72 at a 12% filling ratio Dark current in the forward bias respectively [31]. From the viewpoints of surface and Auger recom- is generally determined by competition between diffusion current binations, surface area enhancement (AsiNw Aplanar)and emitter and SCR recombination. Increasing the forward bias causes the volume enhancement (BsiNwPlanar)of SiNWs over planar Si need Jaifr of active carriers to dominate the Jscr because SCr width to be analyzed for explaining photovoltaic performances. These accordingly decreases. As a result, the jscr (region I)normally values were calculated using the filling ratio and nanowire lengths, changes to the Jair (region II), as shown in Fig. 5(a). From region I in which AsNw and Aplanar correspond to surface areas of SiNWs and to Il, transition voltages(Vr)shifted to decrease with increased a planar Si, and BsiNw and Planar are emitter volumes of SiNWs and a filling ratio(Fig. 5(b). When the influence of Jscr became weak, planar Si, respectively(see Fig 4(d))[32]. Highest photocurrent is the transition to diffusive behavior normally occurred at lower obtained from the SiNW cell of 38% filling ratio which minimizes voltages [36] because of the increased diffusion length (or both surface area and emitter volume increased effective minority carrier lifetime teff. Hence, it is The results were also understood through the behaviors of reasonable that increases in wire filling ratios also lead to dark currents Dark). Dark I-V curves were identified by three increases in Teff. The dependence of Teff on filling ratios is also distinctive regions(Fig. 5(a)) plotted with a log scale 133-35]. The supported by analysis of the reverse saturation current, J JR is low voltage region I(V<0.3-0.)exhibited space-charge-region inversely proportional [37 to teff as follows, (SCR) recombination current Uscr), mainly attributed to the shunt leakage current Ush). In common, dark leakage current at low JR q×n;×W1 biases referred to as shunt leakage current [34. The medium voltage region Il(0.4 <V<0. 8)exhibited the exponential char- where n; is the intrinsic carrier density and w is the depletion acteristics of diodes (Io eqvnkBt)based on the diffusion current width. As shown in Fig. 5(c), with increased filling ratios, JR Aiff)of activated carriers. The high forward biases of region ill decreased due to increases in teff 88 J.-Y. Jung et al./ Solar Energy Materials S Solar Cells 112(2013)84-90 a 100 Si filling ratio length Si filling ratio length 38%1.2pm 38%12 27%3pm 27%3pm 18%4.5pm 18%45um 2%6pm 12%6um Join t 0.1 0.1 0.01 氵Ⅲ → Transition 0.01 0.001 1.51040.50.00.51.015 00 Voltage (v tage vI 04 ++° 0.3 0.40 02 2 01 0.36 si Filling Ratio (%) Si Filling Ratio (% Fig. 5.(a) Typical dark I-v characteristics of sinw solar cells according to the combination of filling ratio and nw length: 38% and 1.2 um. 27% and 3 um. 18% and 4. 5 um and 12% and 6 um. (b)Magnified view of (a)to clarify forward bias region. Fitting lines( grey solid line) represent the dominant current mechanism and component in each rcgion. Transition voltage(dot linc) from SCR recombination current to diffusion current for cach SiNW solar ccll described. The transition points werc dctcrmincd from the intersections in which the line slopes of ScR recombination current (region 1)and diffusion current (region 2)meet.(c)Reverse saturation current and transition voltage, and (f fill factor and shunt resistance as a function of filling ratio at same light absorptance of 99% Analyzing the ideality factors in region I provided useful planar Si(Fig. 6(c). The 250-nln-long wire solar cell revealed information on shunt leakage current (Fig. 5(b)). Large shunt comparable performance for excluding the influence of enhanced leakage current observed in our sinw solar cells would be light absorptance in comparison to that of a planar solar cell, in originated from high levels of a surface trap density and impu- spite of the remarkable increase in surface area. this result clearly rities caused by sod doping process. a decrease in wire length(by demonstrates the effectiveness of a short wire length(250 nm)for increasing the filling ratio)decreased a from 8.9 to 4.7 due to efficient carrier collection(Fig. 6(d) decreased shunt leakage. Increased shunt resistance, Rsi, with When wire length was further increased up to 500 nm, EQe increased filling ratio resulted in improved FF(Fig. 5(d). Jsc is was greatly suppressed in the short wavelength region of given by [ 35] 300-600 nm, whereas it was improved in long wavelengths V-Jsc×Rs (600-1100 nm) due to further increases in light trapping. R Although with longer NWs light absorptance was further h broadband wavelength markable increases in where Jph is photocurrent and Rs is series resistance. Conse- recombination rates focused on the high-energy photons quently, the use of wire solar cells at higher filling ratios increases absorbed closer to the wire surface. This feature resulted in Isc via decreases in JR and increases in Rsh. The optimized wire dramatic suppression in IQE, especially for short wavelengths structure for antireflective wire solar cells is extracted by com-(Fig. 6(d). Considering both light absorptance and carrier selec paring the photovoltaic performances of sc, Voc, and CE, as shown tion, we suggest an optimal wire length of 500 nm and a wire in Fig. 6(a) and (b). The highest values obtained were Jsc of filling ratio of 38%. Further enhanced QE is anticipated for 29.9 malam v of 531 mv. and ce of 10 32% which were collecting high-energy photons owing to improved surface passi achieved at the wire length of 500 nm(see Table 2). Although Jr vation and anti-reflectance if a thin dielectric layer can be increased with wire length, both Jsc and Voc increased until the integrated into a system. This attempt further decreases the wire length of 500 nm. This is because light absorptance is optimal wire length to less than 500 nm while improving photo enhanced due to improved light trapping caused by the increase voltaic performances by suppressing Auger and surface in wire length(Fig. 6(a) and(b). However, with a wire length of recombinations. 1 um, the dramatic increase in Jk strongly dominated the positive impact of absorptance enhancement so that Vor greatly decreased according to the following relation 33 4. Conclusions kgT;n「/s (4) We investigated the photovoltaic performance of antireflective SiNWS by separately controlling wire length and filling ratio. The To specifically resolve carrier collection efficiency, EQE and IQE ire length required to obtain the same amount of light absorp were compared between planar si and sinw solar cells, as shown ince decreased with increased filling ratios. a wire length of in Fig. 6(c) and (d). Previous work reported that antireflective 1.2 um with a filling ratio of 38% achieved light absorptance of SiNWs enhanced light absorptance while degrading photovoltaic 99%. The superior antireflective characteristics of SiNW arrays performance due to broadband decreases in QE [25. However, in stem mostly from the optical impedance matching based on the tested device employing a short wire length of 250 nm, EQE reduction in refractive index mismatch. Geometrical optimization improved over the broadband (300-1100 nm)in comparison to using a high filling ratio(38%) and short wire length(500 nm J.-Y. Jung et aL. Solar Energy Materials S Solar Cells 112(2013)84-90 a 0.06 10 30 0.05 0.04 彐 0.03 0.02 510 02505007501000 02505007501000 Length of siNW(nm) Length of SiNW(nm) 60 8 Nw length NW lengt planar si Planar si 0.25um 0.5pm 0.5um 1um 0 m 600 800 1000 400 8001000 Wavelength(nm Wavelength(nm) Fig. 6. (a) Short circuit current conversion efficiency and (b)open circuit voltage and recombination current as a function of Nw length at filling ratio of 38%.(c)EQE and (d iQE of SiNW solar cells with different Nw lengths Table 2 [6]H. Sai, Y. Kanamori, K. Arafune, Y. Ohshita, M. Yamaguchi, Light trapping Photovoltaic performances of SiNw solar cells as a tunction of wire length with effect of submicron surface textures in crystalline Si solar cells, Progress in 10 S Ag deposition time. Photovoltaics 15(2007)415- 423 [7]S L. Diedenhofen. G. Vecchi, R.E. Algra, A. Hartsuiker, O.L. Muskens. Ag 10S Voc (mv) Jsc(mA/cm) FF(‰) CE(‰) G Immink, E.P.A. M. Bakkers, W.L. Vos, J.G. Rivas, Broad-band and omnidirec tional antireflection coatings based on semiconductor nanorods, Advanced Planar si 514 24.00 Materials21(2009)973-978 0.25um 654 962 [8Y. Chen, Z D. Xu, M.R. Gartia, D. Whitlock, Y.G. Lian, G L. Liu, Ultrahigh 0.5um 65.1 10.32 throughput silicon nanomanufacturing by simultaneous reactive ion synth 1 Hm 518 642 987 esis and etching, ACS Nano 5(2011)8002-8012 [9]RA Street, W.S. Wong, C. Paulson, Analytic model for diffuse reflectivity of silicon nanowire mats, Nano Letters 9(2009)3494-3497. could minimize surface and bulk recombination. Optimization [10 L.Y. Cao, P.Y. Fan, A.P. Vasudev, J.S. White, Z F. Yu, W.S. Cai, J. A. Schuller, S H. Fan, ML Brongersma, Semiconductor nanowire optical antenna solar could also reduce the shunting feature in SinW solar cells. The absorbers, Nano Letters 10(2010)439-445 results might useful for designing guidelines on integrating wires [11]7.Y. Fan, R. Kapadia, p.W. Iell, X B. Thang, Y 1. Chueh, k. Takei, K. Y1 as an antireflective coating in SinW solar cells A Jamshidi, A A Rathore, D.J. Ruebusch, M. Wu, A Javey, Ordered arrays of dual-diameter nanopillars for maximized optical absorption, nano letters 10 2010)3823-3827 12]J.Y. ark, J-H. ong antireflective solar cell prepared by tapering silicon nanowires, Optics Acknowledgements Express18(2010)A286-A292 [13]L Hu, G. Chen, Analysis of optical absorption in silicon nanowire arrays for photovoltaic applications, Nano Letters 7(2007)3249-3252 This work was supported by the New Renewable Energy of 4J.S. Li, H.Y. Yu, S.M. Wong, X.C. Li, G. Zhang, P.G. Q Lo, D L Kwong, Design the Korea Institute of Energy Technology Evaluation and Planning guidelines of periodic Si nanowire arrays for solar cell application, Applied Physics Letters 95(2009)243113 (KETEP) grants(No. 20123021010010, No 20113020010010), and [15] C H Sun, P. Jiang, B Jiang, Broadband moth-eye antireflection coatings on by the human resources development of the ketep grant(No silicon, Applied Physics Letters 92(2008) 12 20124030200130) funded by the Korea government Ministry of 16 H.P. Wang, K.Y. Lai, Y.R. Lin, C.A. Lin, J H. He, Periodic Si nanopillar arrays Knowledge Economy(MKE), Republic of Korea fabricated by colloidal lithography and catalytic etching for broadband and omnidirectional elimination of fresnel reflection, Langmuir 26(2010) 12855-12858 117J.W. Leem, Y.M. Song, .S. Yu, broadband wide-angle antireflection eferences enhancement in AZO/Si shell/corc subwavelength grating structures with hydrophobic surface for Si-based solar cells, Optics Express 19(2011) [1] H.C. Chang, K.Y. Lai, Y.A. Dai, H H. Wang, C.A. Lin, J.H. Hc, Nanowire arrays 18]H. Bao, X.L. Ruan, Optical absorption enhancement in disordered vertical with controlled structure profiles for maximizing optical collection efficiency ilicon nanowire arrays for photovoltaic applications, Optics letters 35 Energy Eilvironmental Science 4 (2011)2863-2859 2010)3378-3380 [2] S.E. Han, G. Chen, Toward the Lambertian limit of light trapping in thin 19] C.X. Lin, M.L. Povinelli, Optimal design of aperiodic, vertical silicon nanowire nanostructured silicon solar cells, Nano Letters 10(2010)4692-4696 structures for photovoltaics, Optics Express 19(2011)A1148-A1 154 [3 J. Zhu, Z.F. Yu, G.F. Burkhard, C M. Hsu, S.T. Connor, Y Q. Xu, Q. Wang Q 120 Q.G. Du, C.H. Kam, H.V. Demir, H.Y. Yu, X.W. Sun, Broadband absorption M.D. McGehee, S.H. Fan, Y. Cui, Optical absorption enhancement in amor- nhancement in randomly positioned silicon nanowire arrays for solar cell phous silicon nanowire and nanocone arrays, Nano Letters 9(2000)279-282 121 applications, Optics Letters 36(2011)1884 1886 [4]SL. Diedenhofen, O.T. A Janssen, G. Grzela, E.P.A. M. Bakkers, J.G. Rivas, Strong [21] V. Sivakov. G. Andra. A Gawlik, A. Berger. J. Plentz, F. Falk. S.H. Christiansen geometrical dependence of the absorption of lighit in arrays of semiconductor Silicon nanowire-based solar cells on glass: synthesis, optical properties, and nanowires, ACs 01112316-2323 cell parameters, Nano Letters 9(2009)1549-1554 [5] W.L. Min, B Jiang, P. Jiang, Bioinspired self-cleaning antireflection coatings 122 T H Pei, S Thiyagu, Z Pei, Ultra high-density silicon nanowires for extremely Advanced Materials 20(2008)3914 3918 low reflection in visible regime, Applied Physics Letters 99(2011)153105 J.-Y. Jung et al./ Solar Energy Materials S Solar Cells 112(2013)84-90 [23] K.Q. Peng, Y. Xu, Y Wu, Y. Yan, S. T. Lee, Zhu, Aligned single-crystalline Si 31]. Oh, H.-C. Yuan, H.M. Branz, An 18.2%-efficient black-silicon solar cell nanowire arrays for photovoltaic applications, Small 1(2005)1062-1067 achieved through control of carrier recombination in nanostructures, Nature [24]F. Toor, H M. Branz M.R. Page, K.M. Jones, H.C. Yuan, Multi-scale surface nanotechnology 7(2012)743-748 texture to improve blue response of nanoporous black silicon solar cells, [321 ASiNw and BsiNw of SiNw samples were calculated in total area(aplanat Applied Physics Letters 99(2011)103501 3 x3 um" )using the N, D, length(L), and a junction depth(X=0. 4 um)of a [25 H F Li, R Jia, C. Chen, Z Xing, w.C. Ding, Y L Meng, D.Q. Wu, X.Y. Liu, T C Ye Influence of nanowires length on performance of crystalline silicon solar cell, planar Si solar cell by following equations, AsINW-TDxLxN+Aplunu Applied Physics Letters 98(2011)151116 BsNw=丌(D/2)2×LxN-Bana, Balance=X 126K Q. Pcng, Y. Yan, S.P. Gao, Zhu, Dcndritc-assisted growth of silicon 133. Pallares, R. Cabre, L.F. Marsal, R.E.L. Schropp, A compact equivalent circuit for the dark current-voltage characteristics of nonideal solar cells, Journal of nanowires in electroless metal deposition, Advanced Functional Materials 1 Applied Physics 100(2006)084513 (2003)127-132 [27]J.-Y Jung, K. Zhou, H.D. Um, Z. Guo, S.w. Jee, K.-T. Park, J -H. Lee, Effective 34]S. Dongaonkar, J.D. Servaites, G.M. Ford, S Loser, J. Moore, R.M. Gelfand, method to extract optical bandgaps in Si nanowire arrays, Optics letters 36 H. Mohseni, H W. Hillhouse R. Agrawal, M.A. Ratner. T. Marks (2011)26772679 M.S. Lundstrom, M.A. Alam, Universality of non-Ohmic shunt leakage in [28 E. Garnett, P D. Yang. Light trapping in silicon nanowire solar cells, Nano thin-film solar cells, Journal of Applied Physics 108(2010)124509 Letters10(2010)1082-1087 135J. Nelson. The Physics of Solar Cells, Imperial College Press, London, 2003 [29]C.-L. Lee, K. Tsujino, Y. Kanda, S ikeda, M Matsumura, Pore formation in 36] B.R. Luang, Y -K. Yang, T.-C. Lin, W.-L. Yang, A simple and low-cost silicon by wet etching using micrometre-sized metal particles as catalysts, Journal of materials Chemistry 18(2008)1015-1020 als and solar cells 98(2012)357-362 [30]Y P. Dan, K Seo, K. Takei, JH a, A Javey, K B. Crozier, Dramatic reduction I O. Gunawan, S. Guha, Characteristics of vapor-liquid-solid grown silicon of surfacc recombination by in situ surfacc passivation of silicon nanowires, nanowire solar cells, Solar Energy Materials and Solar Cells 93(2009) Nano letters11(2011)2527-2532. 1388-1393

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