DEFINE OUTFILE="igbt.ps"
OPTION DEVICE=CL/POSTSCRIPT PLOT.OUT=@OUTFILE ^ECHO
$*************************** 初 始 化 网 格 *************************
$******************************************************************************$***************
BORON SEG.0=3e4
$total flow
$specify x mesh
LINE X LOCATION=0 SPACING=0.2 TAG=LEFT
LINE X LOCATION=5 SPACING=0.2
LINE X LOCATION=10 SPACING=0.5
LINE X LOCATION=20 SPACING=0.2
LINE X LOCATION=28 SPACING=0.2 TAG=RIGHT
$specify y mesh
LINE Y LOCATION=0 SPACING=0.1 TAG=OXTOP
LINE Y LOCATION=1.5 SPACING=0.2 TAG=OXBOTTOM
LINE Y LOCATION=4 SPACING=1.0 TAG=SIBOTTOM
ELIMINATE COLUMNS Y.MIN=1
ELIMINATE COLUMNS Y.MIN=2
$*************************** P-type substrate ******************************
$*************************************
INITIALIZE <100> impurity=boron i.resist=25
SELECT Z=LOG10(phosphor) title="substrate"
PLOT.2D Y.MAX=4
COLOR SILICON COLOR=7
COLOR OXIDE COLOR=5
COLOR POLY COLOR=3
COLOR ALUMINUM COLOR=2
FOREACH X ( 14 TO 20 STEP 1 )
CONTOUR VALUE=X COLOR=4 LINE.TYP=2
END
SELECT Z=LOG10(boron)
FOREACH Y ( 14 TO 20 STEP 1 )
CONTOUR VALUE=Y COLOR=2 LINE.TYP=2
END
SELECT Z=LOG10(arsenic)
FOREACH Y ( 14 TO 20 STEP 1 )
CONTOUR VALUE=Y COLOR=3 LINE.TYP=2
END
SELECT Z=LOG10(BF2)
FOREACH Y ( 14 TO 20 STEP 1 )
CONTOUR VALUE=Y COLOR=6 LINE.TYP=2
END
PLOT.2D ^AX ^CL
$*************************** P --epi 7um i.resist=25 *************************
deposit silicon thick=3 impurity=boron i.resist=25 temp=1150 SPACES=10 YDY=3 DY=0.1
deposit silicon thick=4 impurity=boron i.resist=25 temp=1150 SPACES=25 DY=0.05
$***************************************************
$ Plot initial mesh
SELECT Z=1 TITLE="Initial Mesh"
PLOT.2D GRID Y.MAX=4 C.GRID=2
PRINT.1D X.VALUE=0.0 LAYERS
$****************************** initial structure***********************************
SELECT Z=LOG10(phosphor) title="initial structure"
PLOT.2D Y.MAX=4
COLOR SILICON COLOR=7
COLOR OXIDE COLOR=5
COLOR POLY COLOR=3
COLOR ALUMINUM COLOR=2
FOREACH X ( 14 TO 20 STEP 1 )
