通用型贴片电容规格书

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通用型贴片电容规格书
NsN°【南京南山半导体有喉公司一贴片电容选型资料】 名層片式陶電容器 MULTILAYER CHIP CERAMIC CAPACITOR 電容量範圍 項目 通用型 COG/COI片容 尺寸 0402 O603 O805 1206 工作電壓6.310V|6V25V50V63v10V16V25V50V6.310V16v25V50V6.3v10V16V2550V 電容量 0.5PF 1PF SPF 4PF 5PF 1OPF 22PF 33PF 47PF 68PF 100PF 120PF 150PF 180PF 220PF 330PF 470PF 680PF 1000PF 2200PF 2700PF 3300PF 4700PF 5600PF 6800PF inf 12nF 15nF 22nF 47nF 68nF 100nF NscN【南京南山半导体有限公司一贴片电容选型资料】 /風華高科 Capacitance Range Item COG/COH MLCC for general-use DImension 0402 O603 O805 1206 Rated Voltage 63V1016V25V50V6.3V10V16v25V50V6.3V10∨16V25V50V63V10V16Ⅵ2550∨ Capacitance 0.5PF 1PF 2PF SPF 4PF 5PF 7PF 1OPF 22PF 33PF 47PF 68PF 100PF 120PF 150PF 180PF 220PF 330PF 470PF 560PF 680PF 1000PF 2200PF 2700PF 3300PF 4700PF 5600PF 6800PF inf 12nF 15nF 22nF 47nF 68nF 100nF NsN°【南京南山半导体有喉公司一贴片电容选型资料】 名層片式陶電容器 MULTILAYER CHIP CERAMIC CAPACITOR ■通用型COG、∞OH、PH-SL可靠性測試方法 標准 編號 項目 通用型CCG、通用型PH、RH 測試方法 COH片容 SH、TH、∪J, SL片容 工作温度範園-55℃-125℃-55c-85℃ 1.瓷體顔色一致性好。 2芯片無可見損傷光滑平整 3瓷體無外露電極,裂痕,孔洞。 外觀 4端電極無裂痕孔洞磨损及在>10x倍以上的顯微鏡下胡察 表面氧化等 5.端電極應無延伸現象或延伸 部分不超過端頭寬度的一半。 3尺寸 在規定尺寸範圍内 ※使用千分尺或游標卡尺 4 電容量 在規定偏差範圍内 ※測試儀器:HP4278A電橋、HP4284電橋。 ※測試條件;1.測試温度:25℃±5℃,濕度:30%~75%。 Cr<5-F 0.56 2.測試電壓:1.0±02V 5损耗因數F)|5PF《c<50=15(150171×101 3測試頻率C<1000PF1.0±0.1MHz; r≥50PF ≤0.15% C>1000PF,1.0±0.1KHz 8绝缘電阻 C≤10nFRi>5×10°a ※測試儀器:絕綠電阻測試儀(如:SF2511絕緣測試機) (R.) C:>1 On F Ri·cr≥50os ※測試方法施加額定工作電壓在6O±5秒内測量絕緣電阻。 ※施加3倍額定工作電壓,持續60±1秒,未出現擊穿現象并且充 7耐電壓强度 >3×額定工作電壓 電/放電電流低于5omA。 ※首先進行預處理:進行150+0}-10℃熱處理60=5分鐘,然后在 8電容量温度特在工作温度範圃内符合電容器 室温條件下放置24±2小時。 特性温度系數要求 ※在-55-125℃或者-55-85℃範圖内測試電容量,其電容值相對于 25℃時数值的變化率應在規定範圍内。 ※將電容器浸在乙醇和松昋溶液中。然后浸入有鉛235±5℃(無鉛245 9可焊性 75%端電極覆蓋錫 ±5℃)的混合焊錫溶液2±0.5秒。浸入速度:25±25mm秒。 外觀 無明顯缺陷※首先進行預處理:進行150+010℃熟處理60±5分鐘,然后 電容量≤±5%或 在室温條件下放置24±2小時。 變化率+05P取兩 者中最大的 ※然后按下表預熱電容器。將電容器浸λ265±5℃的混合焊錫溶 DF 同初始標准 液10±1秒。再在室温條件下放置24±2小時,然后進行測量。 10耐焊接熱 同初始標准 浸入速度:25±25mm秒 1.R ※預熱條件如下: 階段温度 時問 1100c-120℃1分鐘 2170℃-200℃1分鐘 NscN【南京南山半导体有限公司一贴片电容选型资料】 /風華高科 · General COG、GOH、PH~ SL ML CC reliability test method tandard Numbel Item COG、 COH PH,FH,SH, Test method MLCC for General-use General-use Operating lemperature -55℃~125℃-55℃-85 Range Appearance 1.Goad ceramic body color ※ Check by using microscope≥10 tinuity 2. The chips have no visual damages and must be very 3. No exposed inner-electrode no cracks or holes 4. The outer electrode should nave no cracks, holes, damages or surface oxidation 5. Cuter electrode no prolongaTion or the at on is less trar half of that of the termination width 3Dimensions ithin the specified USiNg micrometer or vernier calipers dimensions 4 Capacitance Within the specified Measuring Equipments: HP4278 capacitance meter, HP4284 tolerance capacitance, ※ Measuring conditions Dissipation ≤0.56 1 Measuring Temperature:25℃±5℃ Humidity:30%~75% Factor(DF) 5P<C<50PF1.5[15c+7×10 Measuring Vo tage: 1.0+0.2V r≥50PF ≤0.15 3. Measuring frecuency: C<1000PF,1.0+0. 1 MHz C≥10c0PF,1.00.1KH Insulation X Measuring equipment: Insulation resistance meter(such 6 Resistance C≤10nFRi>5×1010g as sf251 1 insulation resistance) C>10nFRi·cr≥500s XX Measuring Metnod: Must measure at rated voltage, and measure the IR within 60+5 seconds Withstanding >3x rated continuous ※ Must measure at3 times rated voltace,dw‖tme:60± Voltage orking voltage seconds, no short and the changing/discharging current less than 5omA Capacitance Must meet the capacitor ※Frst, pre-heat: heat treat60±5 minutes at150+0/-10℃, emperature character temperature then set it for 24+2 hours at room temperature Characteristi coefficient requirements within the operating ※ Measure the capacitance at55~125℃or-55~85℃,the tem。 erature range capacitance change ratio comparing to that of 25C must be within the specified range 9 Solderability Tin coverage should be XX Dip the capacitor into ethanol or colophony solution, and then 75% of the outer electrode aip it into235±sc(or245±5℃ leadless eutectic solder seconds. Dipping speed:25±2.5 mm/secono Or2±0.5 solution )eutectic solder solution nanving lead Resistance to Appearance No defects]First pre-heat treat for 60+5 minutes at Soldering visible 150-0/-10℃, then set it for24±2 hours at roon temperature Cap. Change≤±5%±05F※ Then pre-heat the capacitance according to the ratio whichever is larger)I following chart. Dip the capacitor into 265+5'C eutectic solder solution for 10-1 seconds. Then set it Same as for 24+2 hours at room temperature, then measure 10 original spec」 Dipping speed:25±25mmn/ second Prer R Same as original spec Stage Temperature Time 100℃-120℃1 minute 2170℃-200℃|1 minute 46 NsN°【南京南山半导体有喉公司一贴片电容选型资料】 名層片式陶電容器 MULTILAYER CHIP CERAMIC CAPACITOR 編虢 項目 標准 測試方法 ※使用混合焊錫將電容器炟接在圖亻中所示的測試夾具〔玻璃環氧 樹脂板)上。然后沿箭頭方向施加10N的力。焊接應利用烙鐵或 使用回流焊方法進行,而且應謹慎作業,以使焊接均匀且不會出 現熱衝擊等不良現象。 11端電極結合强度不應出現端頭脱落或其它缺陷。 10N,1O=1秒 速度:10mm/秒 玻璃環氧樹脂板 外觀 無明顯缺陷※將電容器焊接在測試夾具(玻璃環氧樹脂板)上。電容器應進行 電容量 在規定偏差簡誇運動,其總蝠值爲15mm,頻辜在近似10-5Hz之問均匀 範圍内 孌化。頻率範園(從10至55Hz再返回10Hz)應在約1分鐘内 同初始標准 完成。振動瑭在三個相互垂直方向各進行2小時(總計6小時) 12耐振動性 ■、■■s■ 固2 ※使用混合焊錫將電容器炟接在圖3中所示的測試夾具〔玻璃環氧 樹脂板)上,然后在圖4所示的方向加力。焊接應利用烙鐵或使 用回流焊方法進行,而且應謹慎作業,以使焊接均匀且不會出現 熱衝擊等不良現象。 50加力速度:1.0mm/移 加力 小4.5mm 弯曲;≤1mm 13抗彎曲性 不應出現裂縫或其他缺陷 容测量仪 trmm 100mm 图3 图4 尺寸(mm) 4.5×2.03.57.0 4,5×3,2|3,57,03,711.0 ×6.34.58.05.6 ※首先進行預處理:進行150+0/-10℃熱處理60±5分鐘,然后 14温度循環 外觀 在室温條件下放置242小時 無缺陷或异常按照下表中列出的四種熟處理方法孰行五次循環。 在室温條件下放置24±2小時,然后進行測量 NsCN°【南京南山半导体有限公司一贴片电容选型资料】 /風華高科 Number Items Standard Test Method Adhesive No removal of the X: Solder the capacitor to the test jig(glass epoxy resin Strength of terminations or other board)shown in Fig. 1 using a eutectic solder. Then Termination defect shall occur apply a 1oN force inthe direction shown as the arrowhead. the aoldering shall be done either with an iron or using the reflow method and shall be conducted ith care so that an iron or using the refow method and shall be conducted with care so that the soldering is iform and free of defects such as heat shock etc 10N,10±1 Speed: 1.Omm/s Fig1 Glss epoxy resinboard Vibration Appearance No defects or x Solder the capacitor to the test jg (glass epoxy resin Re Istance abnormities board). The capacitor should be subjected to a simple ce Within the having a total amplitude of 1.5mm, the specified frequency being varied uniformly between the tolerance approximate limits of 10 and 55Hz, shall be traversed Same ange 12 DE Same a 1 minute. This motion shall be applied for a period are l (trom 10 Hz to 55 Hz then 10 Hz again) in approximatel tandar original spec hours in each 3 mutually perpendicular directions (total is 6 H Fif. 2 Bending No cracks or other X Salder the capacitor to the test jig(glass epoxy resin Resistance detects shall occur board)shown in Fig 3 using a eutectic solder. Then apply a 1 0N force in the direction shown as Fig 4. The ldering shall be done eithe ing the reflow method and shall be conducted with care so that the soldering is uniform and free of detects such as heat shock. etc Foree adding sneed:1.0m/秒 Foree addi 中4.5mr R230 13 1 esure;≤1 p Capacitance meter 45m Fig. 4 LX W Dimension b 4.5×3.2B3.57.03711.0 5,7×6,3|4,58,0156 Temperature Appearance No defects x Pre-treatment: Heat-treat the capacitor for 60+ Cycle 5minutes at 150+0/-10c, then set it for 242 hours at 4 room temperature abnormities Perform five cycles according to the four heat treatments listed in the following table. Set it for 24+2 hours at room temperature, then measure NsN°【南京南山半导体有喉公司一贴片电容选型资料】 名唇片式陶爱電春器 MULTILAYER CHIP CERAMIC CAPACITOR 編號 項目 標准 測試方法 電容量<±25%或 熱處理方法如下表 ±025PF取兩 者中最大的 階段温度 時間(分鐘) DF 同初始標准 1最低工作温度土3 30±3 14温度循環 常温 1.R 大于10C00M9 3最高工作温度±2 30±3 常温 外觀 無缺陷或异常※在40-2℃和9095%相對濕度條件下放置500+24-0小時 然后將其移動到室温條件下恢復放置24±2小時,進行測量 電容量 ≤±5%或 0.5P,取兩 者中最大的 15濕度(穩態) DF 同初始標准 大于10000Mg 外觀 無缺陷或异常※在40=2℃和90-95%相對濕度僚件下施加額定電壓 0+24-0小時。然后將其移動到室温條件下放置24±2小時, 進行測量 電容量 ≤±5%或 0.5P5取兩 者中最大的 16濕度負荷 LDF.同初始棚准 LR 大于10000Mg 外觀 無缺陷或异常※在上限温度下施加2倍的額定工作電壓1000+12小時,充放電電 流不超過5omA。將其移勔到室温條件下恢復放置24±2小時, 進行測量。 電容量 ≤±5%或 5P,取兩 者中最大的。 7壽命 同初始標准 .R. 大于1000oMs2 49 NscN【南京南山半导体有限公司一贴片电容选型资料】 同華高科 Number Item Standard Test Method Temperature Cap. Change s+2.5%-orXHeat-treatment Cycle (Whichever Is larger stage temperature(℃) time (min) DF Same as 1| west opeating temperature±330±3 14 original spec2 normal temperature 1.R. More than 3 high operating temperature土230±3 10000Mg normal temperature 2-3 Appearance No defects>: Set the capacitor for 500+24/-0 hours at the condition Steady abnormities/ of 40+2C and 90-95% humidity Then remove and set it State for 24+2 hours at room temperature, then measure Cap. Change≤±5%or ratio +O5 PF (whichever is larger) 15 DE Same as original spe .R. More than 1000OMg2 Humidity Appearance No defects xApply rated voltage to the capacitor for 500+24-0 Load abnormities hours at the condition of 40+2C and 90-95% humidity Cap. Change|s士5%or Remove and set it for 24+2 hours at room temperature, ratio 0.5PF then measure (whichever is larger) 16 DF Same as original sp F e th 10000Ms Life Test Appearance No defects Apply two times rated voltage to the capacitor for abnormities 1000+12 hours at the upper temperature limits, the aging current should be less than 50mA Rem Cap. Change|≤5%or atio ±0.5PF and set it for 24-2 hours at room temperature (whichever IS larger 17 DF Same as original spec R 10000M9

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