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BA2435芯片手册
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ACN
ACP
CMSRC
ACDRV
ACOK
ACDET
IOUT
SDA
SCL
ILIM
BATDRV
SRN
SRP
GND
LODRV
REGN
BTST
HIDRV
PHASE
VCC
bq24735
bq24735
www.ti.com.cn
ZHCS444A –SEPTEMBER 2011–REVISED JANUARY 2013
具具有有N 通通道道功功率率MOSFET 选选择择器器的的1-4 节节锂锂离离子子电电池池SMBus 充充电电控控制制器器
查查询询样样品品: bq24735
1
特特性性
说说明明
2
• 适适配配器器和和电电池池一一起起向向系系统统供供电电以以支支持持 Intel
®
CPU
bq24735 是一款高效率同步电池充电器, 为有空间限制
智智能能加加速速模模式式
要求的, 多种化学类型的电池充电应用提供低零件数
• SMBus 主主机机控控制制的的 NMOS-NMOS 同同步步降降压压转转换换
量。
器器具具有有可可编编程程的的 615kHz, 750kHz, 和和 885kHz 的的交交
当系统供电需求暂时高于适配器最大供电水平的时候,
换换频频率率
bq24735 使用智能加速技术来允许电池向系统中释放
• 自自动动N-通通道道MOSFET选选择择来来自自适适配配器器或或者者由由内内部部充充
能量,这样的话将保护适配器不被损坏。
电电泵泵驱驱动动的的电电池池的的系系统统电电源源
• 用用于于过过载载电电压压保保护护、、过过流流保保护护、、电电池池、、感感应应器器
bq24735 为满足自动系统电源选择的需要,使用 2 个
和和MOSFET短短路路保保护护的的增增强强型型安安全全特特性性
充电泵来分别驱动 n-通道 MOSFET (ACFET, RBFET
• 可可编编程程输输入入电电流流, 充充电电电电压压, 充充电电电电流流限限制制
和 BATFET) 。
– ±0.5% 充充电电电电压压精精度度高高达达 19.2V
SMBus 控制的输入电流, 充电电流, 和充电电压DAC允
– ±3% 充充电电电电流流精精度度高高达达 8.128A
许非常高的调节精度,此调节精度可通过系统功率管理
– ±3% 输输入入电电流流精精度度高高达达 8.064A
微控制器很容易地进行编程。
– ±2% 20x 适适配配器器电电流流或或者者充充电电电电流流放放大大器器输输出出
精精度度
bq24735 使用内部输入电流寄存器或者外部ILIM引脚
• 可可编编程程电电池池耗耗尽尽阀阀值值,,和和电电池池学学习习功功能能
来减缓PWM调制速度以减小充电电流。
• 可可编编程程适适配配器器检检测测和和指指示示器器
bq24735 为1,2,3或者4系 Li+ 电池充电, 采用 20-引脚,
• 集集成成软软启启动动
3.5x3.5 mm
2
QFN 封装方式。
• 集集成成环环路路补补偿偿
• 在在ILIM引引脚脚上上的的实实时时系系统统控控制制以以限限制制放放电电电电流流
引引脚脚配配置置
• AC 适适配配器器工工作作范范围围 4.5V 至至 24V
• 5 µA 关关闭闭状状态态电电池池放放电电电电流流
• 0.65 mA (最最大大值值 0.8mA ) 适适配配器器待待机机静静态态电电流流
• 20-引引脚脚 3.5 x 3.5 mm
2
QFN 封封装装
应应用用范范围围
• 便便携携式式笔笔记记本本电电脑脑、、UMPC、、超超薄薄笔笔记记本本电电脑脑和和笔笔
记记本本电电脑脑
• 手手持持终终端端设设备备
• 工工业业用用和和医医疗疗用用设设备备
• 便便携携式式设设备备
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2Intel is a registered trademark of Intel.
PRODUCTION DATA information is current as of publication date.
Copyright © 2011–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not English Data Sheet: SLUSAK9
necessarily include testing of all parameters.
VCC
BATDRV
REGN
BTST
HIDRV
PHASE
LODRV
GND
SRP
SRN
Q4
Sis412DN
L1
4.7µH
SYSTEM
C10
10µF
RSR
10m?
R1
430 kW
R2
66.5 kW
C2
0.1µF
U1
bq24735
C8
10uF
Q3
Sis412DN
Q5 (BATFET)
FDS6680A
C7
0.047µF
Adapter +
RAC 10m?
Pack +
C13
0.1µF
C6
1µF
HOST
Dig I/O
SMBus
+3.3V
C4
100 pF
R4
R5
R7
316 kW
ACN
ACP
CMSRC
ACDRV
ACDET
ILIM
SDA
SCL
ACOK
IOUT
Ci
2.2µF
Ri
2?
D2
BAT54C
R9
10 Ω
R3
10 kW
R8
100 kW
R10
4.02 kW
R11
EN
D1
BAT54
C14
0.1µF
C9
10uF
C11
10µF
Pack -
C3
0.1µF
C5
1µF
R6
C1
0.1µF
Total
Csys
220µF
C15
0.01µF
C16
0.1µF
C17
2200pF
Adapter -
ADC
U2
IMD2A
Q1 (ACFET)
FDS6680A
Q2 (RBFET)
FDS6680A
PowerPad
R12
1M
R13
3.01M
Q6
BSS138W
Reverse
Input
Protection
Dig I/O
EN
R14
10 Ω
R15
7.5 W
*
*
4.02 kW
10 kW
10 kW
4.02 kW
*
*
*
bq24735
ZHCS444A –SEPTEMBER 2011–REVISED JANUARY 2013
www.ti.com.cn
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DEVICE INFORMATION
F
s
= 750kHz, I
ADPT
= 4.096A, I
CHRG
= 2.944A, I
LIM
= 4A, V
CHRG
= 12.592V, 90W adapter and 3S2P battery pack
Use 0Ω for better current sensing accuracy, use 10Ω/7.5Ω resistor for reversed battery connection protection. See
application information about negative output voltage protection for hard shorts on battery to ground or battery
reversed connection.
The total Csys is the lump sum of system capacitance. It is not required by charger IC. Use Ri and Ci for adapter hot
plug-in voltage spike damping. See application information about input filter design.
Figure 1. Typical System Schematic with Two NMOS Selector
2 Copyright © 2011–2013, Texas Instruments Incorporated
VCC
BATDRV
REGN
BTST
HIDRV
PHASE
LODRV
GND
SRP
SRN
Q4
Sis412DN
L1
4.7µH
SYSTEM
C10
10µF
RSR
10m?
R1
430 kW
R2
66.5 kW
C2
0.1µF
U1
bq24735
C8
10uF
Q3
Sis412DN
Q5 (BATFET)
FDS6680A
C7
0.047µF
Adapter +
RAC 10 mW
Pack +
C6
1µF
HOST
Dig I/O
SMBus
+3.3V
C4
100 pF
R4
R5
R7
549 kW
ACN
ACP
CMSRC
ACDRV
ACDET
ILIM
SDA
SCL
ACOK
IOUT
Ci
2.2µF
Ri
2 ?
R9
10 Ω
R3
10 kW
R8
100 kW
R10
4.02 kW
R11
D1
BAT54
C9
10uF
C11
10µF
Pack -
C3
0.1µF
C5
1µF
R6
4.02 kW
C1
0.1µF
Total
Csys
220µF
C15
0.01µF
C16
0.1µF
C17
2200 pF
Adapter -
ADC
Q1 (ACFET)
FDS6680A
D3
PDS1040
PowerPad
C13
0.1µF
C14
0.1µF
R14
10 Ω
R15
7.5 Ω
*
*
4.02 kW
10 kW
10 kW
*
*
*
bq24735
www.ti.com.cn
ZHCS444A –SEPTEMBER 2011–REVISED JANUARY 2013
F
s
= 750kHz, I
ADPT
= 2.816A, I
CHRG
= 1.984A, I
LIM
= 2.54A, V
CHRG
= 12.592V, 65W adapter and 3S2P battery pack
Use 0Ω for better current sensing accuracy, use 10Ω/7.5Ω resistor for reversed battery connection protection. See
application information about negative output voltage protection for hard shorts on battery to ground or battery
reversed connection.
The total Csys is the lump sum of system capacitance. It is not required by charger IC. Use Ri and Ci for adapter hot
plug-in voltage spike damping. See application information about input filter design.
Figure 2. Typical System Schematic with One NMOS Selector and Schottky Diode
Copyright © 2011–2013, Texas Instruments Incorporated 3
VCC
BATDRV
REGN
BTST
HIDRV
PHASE
LODRV
GND
SRP
SRN
Q4
Sis412DN
L1
4.7µH
SYSTEM
C10
10
µF
RSR
10 mW
R1
430 kW
R2
487 kW
C2
0.1µF
U1
bq24735
C8
10uF
Q3
Sis412DN
C7
0.047µF
Adapter +
RAC 10 mW
Pack +
C6
1µF
HOST
Dig I/O
SMBus
+3.3V
C4
100 pF
R4
R5
R7
549
kW
ACN
ACP
CMSRC
ACDRV
ACDET
ILIM
SDA
SCL
ACOK
IOUT
Din
BAT54A
R9
4.7 W
R3
10 kW
R8
100 kW
R10
4.02 kW
R11
4.02 kW
D1
BAT54
C9
10uF
C11
10 µF
Pack -
C3
0.1µF
C5
1µF
R6
4.02 kW
C1
0.1 µF
Total
Csys
220
µF
Adapter -
ADC
Q1 (ACFET)
FDS6680A
Q2 (RBFET)
FDS6680A
PowerPad
C13
0.1µF
C14
0.1µF
R14
10 W
R15
7.5 W
*
*
C17
2200pF
C16
0.047µF
R12
100 kW
Q5 (BATFET)
Si4435DDY
D2
SL42
10 kW
10 kW
*
*
bq24735
ZHCS444A –SEPTEMBER 2011–REVISED JANUARY 2013
www.ti.com.cn
F
s
= 750kHz, I
ADPT
= 2.048A, I
CHRG
= 1.984A, I
LIM
= 2.54A, V
CHRG
= 4.200V, 12W adapter and 1S2P battery pack
Use 0Ω for better current sensing accuracy, use 10Ω/7.5Ω resistor for reversed battery connection protection. See
application information about negative output voltage protection for hard shorts on battery to ground or battery
reversed connection.
The total Csys is the total lump sum of system capacitance. It is not required by charger IC. Use Din for reverse input
voltage protection. See application information about reverse input voltage protection.
Figure 3. Typical System Schematic for 5V Input 1S Battery
ORDERING INFORMATION
(1)
ORDERING NUMBER
PART NUMBER IC MARKING PACKAGE QUANTITY
(Tape and Reel)
bq24735RGRR 3000
bq24735 BQ735 20-PIN 3.5 x 3.5mm
2
QFN
bq24735RGRT 250
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document; or, see the TI
web site at www.ti.com.
4 Copyright © 2011–2013, Texas Instruments Incorporated
bq24735
www.ti.com.cn
ZHCS444A –SEPTEMBER 2011–REVISED JANUARY 2013
THERMAL INFORMATION
bq24735
THERMAL METRIC
(1)
UNITS
RGR (20 PIN)
θ
JA
Junction-to-ambient thermal resistance
(2)
46.8
θ
JCtop
Junction-to-case (top) thermal resistance
(3)
56.9
θ
JB
Junction-to-board thermal resistance
(4)
46.6
°C/W
ψ
JT
Junction-to-top characterization parameter
(5)
0.6
ψ
JB
Junction-to-board characterization parameter
(6)
15.3
θ
JCbot
Junction-to-case (bottom) thermal resistance
(7)
4.4
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, High-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC standard
test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψ
JT
, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θ
JA
, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψ
JB
estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θ
JA
, using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a clod plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1) (2)
VALUE UNIT
MIN MAX
SRN, SRP, ACN, ACP, CMSRC, VCC –0.3 30
PHASE –2 30
Voltage range
ACDET, SDA, SCL, LODRV, REGN, IOUT, ILIM, ACOK –0.3 7
V
BTST, HIDRV, ACDRV, BATDRV –0.3 36
Maximum difference SRP–SRN, ACP–ACN –0.5 0.5
voltage
Human Body Model (HBM) 2 kV
ESD
Charge Device Model (CDM) 500 V
Junction temperature range, T
J
–40 155 °C
Storage temperature range, T
stg
–55 155 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult Packaging
Section of the data book for thermal limitations and considerations of packages.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
SRN, SRP, ACN, ACP, CMSRC, VCC 0 24
PHASE -2 24
Voltage range V
ACDET, SDA, SCL, LODRV, REGN, IOUT, ILIM, ACOK 0 6.5
BTST, HIDRV, ACDRV, BATDRV 0 30
Maximum difference voltage SRP–SRN, ACP–ACN –0.2 0.2 V
Junction temperature range, T
J
0 125 °C
Storage temperature range, T
stg
–55 150 °C
Copyright © 2011–2013, Texas Instruments Incorporated 5
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