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带基准的运放INA125
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主要是对芯片的一些参数进行描述,INA125、INA128、INA114这三个有些小的区别!
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©1997 Burr-Brown Corporation PDS-1361B Printed in U.S.A., February, 1998
®
INA125
INSTRUMENTATION AMPLIFIER
With Precision Voltage Reference
FEATURES
● LOW QUIESCENT CURRENT: 460µA
● PRECISION VOLTAGE REFERENCE:
1.24V, 2.5V, 5V or 10V
● SLEEP MODE
● LOW OFFSET VOLTAGE: 250
µV max
● LOW OFFSET DRIFT: 2
µV/°C max
● LOW INPUT BIAS CURRENT: 20nA max
● HIGH CMR: 100dB min
● LOW NOISE: 38nV/√Hz at f = 1kHz
● INPUT PROTECTION TO
±40V
● WIDE SUPPLY RANGE
Single Supply: 2.7V to 36V
Dual Supply:
±1.35V to ±18V
● 16-PIN DIP AND SO-16 SOIC PACKAGES
APPLICATIONS
● PRESSURE AND TEMPERATURE BRIDGE
AMPLIFIERS
● INDUSTRIAL PROCESS CONTROL
● FACTORY AUTOMATION
● MULTI-CHANNEL DATA ACQUISITION
● BATTERY OPERATED SYSTEMS
● GENERAL PURPOSE INSTRUMENTATION
DESCRIPTION
The INA125 is a low power, high accuracy instrumen-
tation amplifier with a precision voltage reference. It
provides complete bridge excitation and precision dif-
ferential-input amplification on a single integrated
circuit.
A single external resistor sets any gain from 4 to
10,000. The INA125 is laser-trimmed for low offset
voltage (250µV), low offset drift (2µV/°C), and high
common-mode rejection (100dB at G = 100). It oper-
ates on single (+2.7V to +36V) or dual (±1.35V to
±18V) supplies.
The voltage reference is externally adjustable with pin-
selectable voltages of 2.5V, 5V, or 10V, allowing use
with a variety of transducers. The reference voltage is
accurate to ±0.5% (max) with ±35ppm/°C drift (max).
Sleep mode allows shutdown and duty cycle operation
to save power.
The INA125 is available in 16-pin plastic DIP and
SO-16 surface-mount packages and is specified for
the –40°C to +85°C industrial temperature range.
A
1
Ref
Amp
10V
A
2
30kΩ
10kΩ
10kΩ
30kΩ
Bandgap
V
REF
13
12
1
14
15
16
4
6
9
10
11
IA
REF
5
8
7
R
G
Sense
R
R
2R
4R
INA125
V
REF
COM
V
REF
BG
V
REF
2.5
V
REF
5
V
REF
10
V
REF
Out
V
IN
V+
+
V
IN
–
2
SLEEP
3
V–
V
O
= (V
IN
– V
IN
) G
G = 4 + 60kΩ
+
–
R
G
V
O
INA125
INA125
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
SBOS060
2
®
INA125
SPECIFICATIONS: V
S
= ±15V
At T
A
= +25°C, V
S
= ±15V, IA common = 0V, V
REF
common = 0V, and R
L
= 10kΩ, unless otherwise noted.
INA125P, U INA125PA, UA
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
INPUT
Offset Voltage, RTI
Initial ±50 ±250 ✻ ±500 µV
vs Temperature ±0.25 ±2 ✻ ±5 µV/°C
vs Power Supply V
S
= ±1.35V to ±18V, G = 4 ±3 ±20 ✻ ±50 µV/V
Long-Term Stability ±0.2 ✻ µV/mo
Impedance, Differential 10
11
|| 2 ✻ Ω || pF
Common-Mode 10
11
|| 9 ✻ Ω || pF
Safe Input Voltage ±40 ✻ V
Input Voltage Range See Text ✻
Common-Mode Rejection V
CM
= –10.7V to +10.2V
G = 4 78 84 72 ✻ dB
G = 10 86 94 80 ✻ dB
G = 100 100 114 90 ✻ dB
G = 500 100 114 90 ✻ dB
BIAS CURRENT V
CM
= 0V 10 25 ✻ 50 nA
vs Temperature ±60 ✻ pA/°C
Offset Current ±0.5 ±2.5 ✻ ±5nA
vs Temperature ±0.5 ✻ pA/°C
NOISE, RTI R
S
= 0Ω
Voltage Noise, f = 10Hz 40 ✻ nV/√Hz
f = 100Hz 38 ✻ nV/√Hz
f = 1kHz 38 ✻ nV/√Hz
f
= 0.1Hz to 10Hz 0.8 ✻ µVp-p
Current Noise, f = 10Hz 170 ✻ fA/√Hz
f
= 1kHz 56 ✻ fA/√Hz
f = 0.1Hz to 10Hz 5 ✻ pAp-p
GAIN
Gain Equation
4 + 60kΩ/R
G
✻ V/V
Range of Gain 4 10,000 ✻✻V/V
Gain Error V
O
= –14V to +13.3V
G = 4 ±0.01 ±0.075 ✻ ±0.1 %
G = 10 ±0.03 ±0.3 ✻ ±0.5 %
G = 100 ±0.05 ±0.5 ✻ ±1%
G = 500 ±0.1 ✻ %
Gain vs Temperature
G = 4 ±1 ±15 ✻✻ppm/°C
G > 4
(1)
±25 ±100 ✻✻ppm/°C
Nonlinearity V
O
= –14V to +13.3V
G = 4 ±0.0004 ±0.002 ✻ ±0.004 % of FS
G = 10 ±0.0004 ±0.002 ✻ ±0.004 % of FS
G = 100 ±0.001 ±0.01 ✻✻% of FS
G = 500 ±0.002 ✻ % of FS
OUTPUT
Voltage: Positive (V+)–1.7 (V+)–0.9 ✻✻ V
Negative (V–)+1 (V–)+0.4 ✻✻ V
Load Capacitance Stability 1000 ✻ pF
Short-Circuit Current –9/+12 ✻ mA
VOLTAGE REFERENCE V
REF
= +2.5V, +5V, +10V
Accuracy I
L
= 0 ±0.15 ±0.5 ✻ ±1%
vs Temperature I
L
= 0 ±18 ±35 ✻ ±100 ppm/°C
vs Power Supply, V+ V+ = (V
REF
+ 1.25V) to +36V ±20 ±50 ✻ ±100 ppm/V
vs Load I
L
= 0 to 5mA 3 75 ✻✻ppm/mA
Dropout Voltage, (V+) – V
REF
(2)
Ref Load = 2kΩ 1.25 1 ✻✻ V
Bandgap Voltage Reference 1.24 ✻ V
Accuracy I
L
= 0 ±0.5 ✻ %
vs Temperature I
L
= 0 ±18 ✻ ppm/°C
3
®
INA125
INA125P, U INA125PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
FREQUENCY RESPONSE
Bandwidth, –3dB G = 4 150 ✻ kHz
G = 10 45 ✻ kHz
G = 100 4.5 ✻ kHz
G = 500 0.9 ✻ kHz
Slew Rate G = 4, 10V Step 0.2 ✻ V/µs
Settling Time, 0.01% G = 4, 10V Step 60 ✻ µs
G = 10, 10V Step 83 ✻ µs
G = 100, 10V Step 375 ✻ µs
G = 500, 10V Step 1700 ✻ µs
Overload Recovery 50% Overdrive 5 ✻ µs
POWER SUPPLY
Specified Operating Voltage ±15 ✻ V
Specified Voltage Range ±1.35 ±18 ✻✻V
Quiescent Current, Positive I
O
= I
REF
= 0mA 460 525 ✻✻ µA
Negative I
O
= I
REF
= 0mA –280 –325 ✻✻ µA
Reference Ground Current
(3)
180 ✻ µA
Sleep Current (V
SLEEP
≤ 100mV) R
L
= 10kΩ, Ref Load = 2kΩ±1±25 ✻✻ µA
SLEEP MODE PIN
(4)
V
IH
(Logic high input voltage) +2.7 V+ ✻✻V
V
IL
(Logic low input voltage) 0 +0.1 ✻✻V
I
IH
(Logic high input current) 15 ✻ µA
I
IL
(Logic low input current) 0 ✻ µA
Wake-up Time
(5)
150 ✻ µs
TEMPERATURE RANGE
Specification Range –40 +85 ✻✻°C
Operation Range –55 +125 ✻✻°C
Storage Range –55 +125 ✻✻°C
Thermal Resistance,
θ
JA
16-Pin DIP 80 ✻ °C/W
SO-16 Surface-Mount 100 ✻ °C/W
✻ Specification same as INA125P, U.
NOTES: (1) Temperature coefficient of the "Internal Resistor" in the gain equation. Does not include TCR of gain-setting resistor, R
G
. (2) Dropout voltage is the
positive supply voltage minus the reference voltage that produces a 1% decrease in reference voltage. (3) V
REF
COM pin. (4) Voltage measured with respect to
Reference Common. Logic low input selects Sleep mode. (5) IA and Reference, see Typical Performance Curves.
SPECIFICATIONS: V
S
= ±15V (CONT)
At T
A
= +25°C, V
S
= ±15V, IA common = 0V, V
REF
common = 0V, and R
L
= 10kΩ, unless otherwise noted.
INA125P, U INA125PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
INPUT
Offset Voltage, RTI
Initial ±75 ±500 ✻ ±750 µV
vs Temperature ±0.25 ✻ µV/°C
vs Power Supply V
S
= +2.7V to +36V 3 20 ✻ 50 µV/V
Input Voltage Range See Text ✻
Common-Mode Rejection V
CM
= +1.1V to +3.6V
G = 4 78 84 72 ✻ dB
G = 10 86 94 80 ✻ dB
G = 100 100 114 90 ✻ dB
G = 500 100 114 90 ✻ dB
GAIN
Gain Error V
O
= +0.3V to +3.8V
G = 4 ±0.01 ✻ %
OUTPUT
Voltage, Positive (V+)–1.2 (V+)–0.8 ✻✻ V
Negative (V–)+0.3 (V–)+0.15 ✻✻ V
POWER SUPPLY
Specified Operating Voltage +5 ✻ V
Operating Voltage Range +2.7 +36 ✻✻V
Quiescent Current I
O
= I
REF
= 0mA 460 525 ✻✻ µA
Sleep Current (V
SLEEP
≤ 100mV) R
L
= 10kΩ, Ref Load = 2kΩ±1±25 ✻✻ µA
✻ Specification same as INA125P, U.
SPECIFICATIONS: V
S
= +5V
At T
A
= +25°C, V
S
= +5V, IA common at V
S
/2, V
REF
common = V
S
/2, V
CM
= V
S
/2, and R
L
= 10kΩ to V
S
/2, unless otherwise noted.
4
®
INA125
PIN CONFIGURATION
Top View 16-Pin DIP, SO-16
Power Supply Voltage, V+ to V– ........................................................ 36V
Input Signal Voltage .......................................................................... ±40V
Output Short Circuit ................................................................. Continuous
Operating Temperature ................................................. –55°C to +125°C
Storage Temperature..................................................... –55°C to +125°C
Lead Temperature (soldering, 10s) ............................................... +300°C
NOTE: Stresses above these ratings may cause permanent damage.
ABSOLUTE MAXIMUM RATINGS
(1)
V+
SLEEP
V–
V
REF
OUT
IA
REF
V
IN
V
IN
R
G
V
REF
10
V
REF
5
V
REF
2.5
V
REF
BG
V
REF
COM
Sense
V
O
R
G
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
–
+
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
PACKAGE INFORMATION
PACKAGE DRAWING
PRODUCT PACKAGE NUMBER
(1)
INA125PA 16-Pin Plastic DIP 180
INA125P 16-Pin Plastic DIP 180
INA125UA SO-16 Surface-Mount 265
INA125U SO-16 Surface-Mount 265
NOTES: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
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