User’s Manual
All information contained in these materials, including products and product specifications,
represents information on the product at the time of publication and is subject to change by
Renesas Electronics Corp. without notice. Please review the latest information published by
Renesas Electronics Corp. through various means, including the Renesas Electronics Corp.
website (http://www.renesas.com).
Rev.1.04 Aug. 2013
16
www.renesas.com
RL78 Family
Data Flash Library Type04
Japanese Release
ZIP file name : JP_R_FDL_RL78_T04_Vx.xx_x_E
16-Bit Single-Chip Microcontrollers
Target Devices
RL78/D1A RL78/L12
RL78/F12 RL78/L13
RL78/G12
RL78/G13
RL78/G14
RL78/G1A
RL78/G1C
RL78/I1A
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you
or third parties arising from the use of these circuits, software, or information.
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does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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(2012.4)
NOTES FOR CMOS DEVICES
(1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a
reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL
(MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise
from entering the device when the input level is fixed, and also in the transition period when the input level
passes through the area between VIL (MAX) and VIH (MIN).
(2) HANDLING OF UNUSED INPUT PINS: Unconnected CMOS device inputs can be cause of malfunction. If
an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc.,
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of
CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be
connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling
related to unused pins must be judged separately for each device and according to related specifications
governing the device.
(3) PRECAUTION AGAINST ESD: A strong electric field, when exposed to a MOS device, can cause
destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it when it has occurred.
Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended
to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and
transported in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work benches and floors should be grounded. The operator should be grounded using a wrist
strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken
for PW boards with mounted semiconductor devices.
(4) STATUS BEFORE INITIALIZATION: Power-on does not necessarily define the initial status of a MOS
device. Immediately after the power source is turned ON, devices with reset functions have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A
device is not initialized until the reset signal is received. A reset operation must be executed immediately
after power-on for devices with reset functions.
(5) POWER ON/OFF SEQUENCE: In the case of a device that uses different power supplies for the internal
operation and external interface, as a rule, switch on the external power supply after switching on the internal
power supply. When switching the power supply off, as a rule, switch off the external power supply and then
the internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements
due to the passage of an abnormal current. The correct power on/off sequence must be judged separately
for each device and according to related specifications governing the device.
(6) INPUT OF SIGNAL DURING POWER OFF STATE : Do not input signals or an I/O pull-up power supply
while the device is not powered. The current injection that results from input of such a signal or I/O pull-up
power supply may cause malfunction and the abnormal current that passes in the device at this time may
cause degradation of internal elements. Input of signals during the power off state must be judged
separately for each device and according to related specifications governing the device.
HOW TO USE THIS MANUAL
Readers This manual is intended for user engineers who wish to understand the functions of the
RL78 microcontrollers Data Flash Library Type 04 and design and develop application
systems and programs for these devices.
The target products are as follows.
RL78/D1A, RL78/F12, RL78/G12, RL78/G13, RL78/G14, RL78/G1A, RL78/G1C, RL78/I1A,
RL78/L12, RL78/L13
Purpose This manual is intended to give users an understanding of the methods (described in the
Organization below) for using the Data Flash Library Type 04 to rewrite the data flash
memories.
Organization The RL78 Data Flash Library Type 04 user’s manual is separated into the following parts:
•
Overview
•
Programming Environment
• Data Flash Library Function
How to Read This Manual It is assumed that the readers of this manual have general knowledge of electrical
engineering, logic circuits, and microcontrollers.
• To gain a general understanding of functions:
→ Read this manual in the order of the CONTENTS.
• To know details of the RL78 Microcontroller instructions:
→ Refer to CHAPTER 3 DATA FLASH LIBRARY FUNCTION.
The mark <R> shows major revised points.
Conventions Data significance: Higher digits on the left and lower digits on the right
Active low representations: ××× (overscore over pin and signal name)
Note: Footnote for item marked with Note in the text
Caution: Information requiring particular attention
Remark: Supplementary information
Numerical representations: Binary
...
×××× or ××××B
Decimal
...
××××
Hexadecimal
...
××××H
All trademarks and registered trademarks are the property of their respective owners.
EEPROM is a trademark of Renesas Electronics Corporation.
Index-1
CONTENTS
CHAPTER 1 OVERVIEW .............................................................................................. 6
1. 1 Overview ....................................................................................................................................... 6
1. 2 Calling Data Flash Library Type 04 ............................................................................................... 8
CHAPTER 2 PROGRAMMING ENVIRONMENT ........................................................ 12
2. 1 Hardware Environment ............................................................................................................... 12
2. 1. 1 Initialization .................................................................................................................... 14
2. 1. 2 Data flash control register (DFLCTL) ............................................................................ 14
2. 1. 3 Blocks ............................................................................................................................ 15
2. 1. 4 Processing Time During Data Flash Library Type04..................................................... 16
2. 2 Software Environment ................................................................................................................. 23
2. 2. 1 Software Resource of the R5F10266 product ............................................................... 25
2. 2. 2 Self-RAM ....................................................................................................................... 28
2. 2. 3 Register bank ................................................................................................................ 28
2. 2. 4 Stack and data buffer .................................................................................................... 28
2. 2. 5 Data Flash library .......................................................................................................... 28
2. 2. 6 Program area ................................................................................................................ 29
2. 3 Cautions on Programming Environment ..................................................................................... 30
CHAPTER 3 DATA FLASH LIBRARY FUNCTION ...................................................... 32
3. 1 Type of Data Flash Library Functions ......................................................................................... 32
3. 2 Segments of Data Flash Library Functions ................................................................................. 32
3. 3 Commands ................................................................................................................................. 32
3. 4 BGO (Background Operation) .................................................................................................... 33
3. 5 List of Data Types, Return Values, and Return Types ................................................................ 35
3. 6 Description of Data Flash Library Functions ............................................................................... 36
APPENDIX A REVISION HISTORY ............................................................................ 46
A. 1 Major Revisions in This Edition .................................................................................................. 46
A. 2 Major Revisions until Revision 1.03 ............................................................................................ 46
