没有合适的资源?快使用搜索试试~ 我知道了~
MOS管_si2301MOS管_si2301MOS管_si2301MOS管_si2301
资源推荐
资源详情
资源评论
Si2301DS
Vishay Siliconix
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
www.vishay.com
1
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(W) I
D
(A)
20
0.130 @ V
GS
= -4.5 V -2.3
-20
0.190 @ V
GS
= -2.5 V -1.9
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301DS (A1)*
*Marking Code
Ordering Information: Si2301DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-20
V
Gate-Source Voltage V
GS
"8
V
Continuous Drain Current (T
J
= 150
_
C)
b
T
A
= 25_C
I
D
-2.3
Continuous Drain Current (T
J
= 150_C)
b
T
A
= 70_C
I
D
-1.5
A
Pulsed Drain Current
a
I
DM
-10
A
Continuous Source Current (Diode Conduction)
b
I
S
-1.6
Power Dissipation
b
T
A
= 25_C
P
D
1.25
W
Power Dissipation
b
T
A
= 70_C
P
D
0.8
W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient
b
R
100
_C/W
Maximum Junction-to-Ambient
c
R
thJA
166
_C/W
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
资源评论
迁QS汕
- 粉丝: 0
- 资源: 13
上传资源 快速赚钱
- 我的内容管理 展开
- 我的资源 快来上传第一个资源
- 我的收益 登录查看自己的收益
- 我的积分 登录查看自己的积分
- 我的C币 登录后查看C币余额
- 我的收藏
- 我的下载
- 下载帮助
安全验证
文档复制为VIP权益,开通VIP直接复制
信息提交成功