[book] Nanometer CMOS ICs --- From basics to ASICs

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Book (Veendrick2008) Harry Veendrick Nanometer CMOS ICs --- From basics to ASICs Springer, 2008 Abstract: 1 Ba sic P rinciples 1 1.1 Introduct ion . ....... . .... . 1 1.2 The field-effect prin ciple . . . . . . . 1 1.3 The inversion-layer MaS transisto r . 4 1.3.1 The Metal-Oxide-Semiconducto r (MaS) capacitor 11 1.3.2 The inversion-layer Ma S t rans istor " 15 1.4 Derivation of simple Ma S formulae. . . . . . . . . . . . . 23 1.5 The back-bias effect (back-gate effect, body effect) and the effect of forward-bias " 27 1.6 Factors which characterise t he behaviour of the MaS transistor. . . . . . . . . . . . . . . . . 30 1.7 Different typ es of MaS transistors 32 1.8 Parasitic MaS tr ansistors . . . . 34 1.9 MaS transistor symbols . . . . . 36 1.10 Capacitances in MaS structures 38 1.11 Conclusions 48 1.12 References . 49 1.13 Exercises . 50 2 Geometrical-, physi cal- and field-scaling impact on MOS t r ansist or behaviour 57 2.1 Introduction . .. . . . . .... . .. . . . . . . . . . . . . 57 xxv 2.2 The zero field mobili ty . . . . . . . 58 2.3 Carrier mobili ty reduction. .. 59 2.3.1 Vertical and lat eral field carrier mobility reduction 59 2.3.2 St ress-induced carrier mobility effects 63 2.4 Channel length modulation 64 2.5 Short- and narrow-channel effects . 66 2.5.1 Short-channel effects . 66 2.5.2 Narrow-channel effect 69 2.6 Temperature influence on carrier mobility and threshold voltage . 71 2.7 MaS transist or leakage mechanisms 74 2.7.1 Weak-inversion (subthreshold ) behaviour of the MaS transistor . 75 2.7.2 Gate-oxide tunnelling 78 2.7.3 Reverse-bias junction leakage 80 2.7.4 Gate-induced dr ain leakage (GIDL) 81 2.7.5 Impact Ionisation . 82 2.7.6 Overall leakage int eractions and considerations 83 2.8 MaS transistor models . 86 2.9 Conclusions 88 2.10 References . 89 2.11 Exercises 91 3 Manufacture of MOS devices 93 3.1 Int roduct ion. ... . . . . . . .. .. . ... ... 93 3.2 Different substrates (wafers) as starting material 95 3.2.1 Wafer sizes . . . .

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2016-09-08
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